STMicroelectronics STP10NM50N

Overview

STP10NM50N from STMicroelectronics is an N-channel 500 V, 7 A, 0.53 Ω (typ.) MDmesh™ II Power MOSFET in TO-220 package, designed for high-efficiency switching converters operating at high voltage and moderate current. It features 100% avalanche tested ruggedness, low gate charge (17 nC), and low input capacitance (450 pF), enabling fast switching with reduced driver loss in SMPS, PFC stages, and industrial AC-DC power supplies.

For engineers reviewing the STP10NM50N datasheet, STP10NM50N pinout, STP10NM50N application, or STP10NM50N equivalent, key selection criteria include its 500 V V_DSS, 0.53 Ω R_DS(on) at V_GS = 10 V, 150 °C max junction temperature, 100% unclamped inductive avalanche rating, and TO-220 thermal resistance of 5 °C/W (junction-to-case).

Technical Context

This device implements ST's second-generation MDmesh™ vertical strip architecture to minimize conduction and switching losses simultaneously. Its 500 V breakdown voltage is rated at T_jmax = 150 °C, and it sustains repetitive avalanche energy up to 2 A I_AR with 143 mJ E_AS (single-pulse, T_j = 25 °C).

The MOSFET delivers low dynamic parameters: C_iss = 450 pF, Q_g = 17 nC, Q_gd = 8.5 nC, and exhibits fast switching with t_d(on) = 7.8 ns and t_f = 12 ns under 4.7 Ω gate drive at V_DD = 250 V, ID = 3.5 A.

Key Specifications

Pinout & Package

STP10NM50N uses a standard TO-220 package with 3 leads: Gate (pin 1), Drain (pin 2, electrically connected to metal tab), Source (pin 3). The metal tab is internally connected to the Drain terminal and must be electrically isolated from heatsink unless circuit topology requires common-drain configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 500 V power MOSFET applications.

Compared with IPP60R099C7 and IRFP460LC, STP10NM50N delivers optimal balance of low conduction loss (0.53 Ω), low switching charge (17 nC), and proven avalanche ruggedness in TO-220 - making it ideal for cost-sensitive, space-constrained 300–500 W industrial and telecom power stages.

Availability

STP10NM50N is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and EV auxiliary power supplies requiring stable component supply across multi-year production cycles.

Supply support for STP10NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MCU, and sensor solutions for industrial, automotive, and consumer markets.

STP10NM50N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching applications including SMPS, PFC, and industrial inverters where low R_DS(on) × Q_g is critical.

FAQ

What is the maximum continuous drain current for STP10NM50N at 100 °C case temperature?

The maximum continuous drain current is 5 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This reflects thermal derating due to reduced safe operating area at elevated temperatures, and must be applied when heatsink temperature exceeds 75 °C in sustained operation.

Does STP10NM50N require a negative gate turn-off voltage?

No. STP10NM50N operates with 0 V to +10 V gate drive for full enhancement and –5 V to 0 V for guaranteed turn-off; the absolute maximum V_GS is ±25 V, but standard TTL/CMOS-compatible drivers (0 V/12 V) are sufficient for reliable switching without negative bias.

Can STP10NM50N be used in synchronous rectification configurations?

Yes - its low R_DS(on) (0.53 Ω), fast body diode (t_rr = 177 ns), and low Q_gd/Q_gs ratio support synchronous rectification in flyback and forward converters up to 200 kHz, provided gate drive timing avoids shoot-through and accounts for diode reverse recovery.

What is the insulation withstand voltage rating between leads and heatsink?

The insulation withstand voltage is 2500 V RMS (1 s, T_C = 25 °C) from all three leads to an external heatsink, as defined in Table 2. This rating applies only when using appropriate insulating hardware (e.g., silicone pad, mica washer) and confirms suitability for isolated heatsink mounting in Class I safety designs.