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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP10NM60N

Name: STP10NM60N
Brand: STMicroelectronics
SKU: STP10NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP10NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP10NM60N.pdf

Description:: MOSFET N-CH 600V 10A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP10NM60N from STMicroelectronics is an N-channel 600 V, 530 mΩ typ., 10 A MDmesh™ II Power MOSFET in DPAK (TO-252) package, designed for high-efficiency switching converters. It features 100% avalanche tested ruggedness, low gate charge (19 nC), and low input capacitance (540 pF), enabling fast switching in SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STP10NM60N datasheet, STP10NM60N pinout, STP10NM60N application, or STP10NM60N equivalent, key selection criteria include R_DS(on) stability over temperature, unclamped inductive switching capability (E_AS = 200 mJ), diode reverse recovery performance (Q_rr = 2.12 µC), and thermal resistance (R_thJC = 1.79 °C/W).

Technical Context

This device employs ST's second-generation MDmesh vertical strip architecture to minimize conduction and switching losses simultaneously. Its 600 V V_(BR)DSS rating with only 530 mΩ typical R_DS(on) enables high-voltage operation without sacrificing efficiency in continuous conduction mode (CCM) PFC and LLC resonant converters.

The integrated body diode exhibits low forward voltage (V_SD = 1.3 V at 8 A) and controlled reverse recovery (t_rr = 250 ns, Q_rr = 2.12 µC), reducing commutation losses and EMI in hard-switched topologies. Gate drive compatibility is ensured by a 2–4 V V_GS(th) range and low intrinsic gate resistance (6 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	600 V - Withstands full-line transients in 400 V DC bus systems without breakdown.
R_DS(on) max	550 mΩ at V_GS = 10 V, I_D = 4 A - Limits conduction loss to ≤2.2 W at 10 A continuous drain current.
Q_g	19 nC - Enables efficient 100–300 kHz switching with standard 1-A gate drivers.
E_AS	200 mJ - Supports robust unclamped inductive switching in flyback and forward converters.
R_thJC	1.79 °C/W - Allows 70 W power dissipation with ≤127 °C junction rise above case at 25 °C ambient.
t_rr	250 ns at T_J = 25 °C - Minimizes diode-induced voltage spikes and cross-conduction risk in synchronous rectification.
I_D cont	10 A at T_C = 25 °C - Sustains full-rated current with adequate heatsinking on PCB copper area.

Pinout & Package

DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; surface-mount, single-row 3-terminal outline conforming to JEDEC MO-247.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Power Drain Terminal	Electrically and thermally connected to internal drain; requires soldered copper pour for heat dissipation and low-inductance return path.
Pin 1 (Gate)	Control Input	High-impedance MOS gate requiring <100 nA leakage; sensitive to ESD; driven via series resistor (4.7 Ω typical) to damp ringing.
Pin 3 (Source)	Power Source Reference	Return path for load current and gate drive loop; must be routed with minimal inductance to reduce switching overshoot.

Key Features

Feature	Design Value
MDmesh™ II vertical structure	Reduces specific on-resistance by >30% vs. planar 600 V MOSFETs, enabling smaller die size without compromising ruggedness.
100% avalanche rated	Guarantees reliable operation under unclamped inductive switching stress up to 200 mJ, eliminating need for external snubbers in many designs.
Low C_iss/C_oss ratio	540 pF / 44 pF = 12.3 - Improves voltage-dependent capacitance linearity, easing ZVS implementation in resonant topologies.
Optimized body diode	Q_rr = 2.12 µC and t_rr = 250 ns - Reduces diode recovery loss and associated EMI compared to standard fast-recovery MOSFETs.
ECOPACK® compliant	Meets RoHS and halogen-free requirements per ST's environmental grade definitions; suitable for industrial and consumer end equipment.

Applications

Server PSU Primary Switch

Industrial AC-DC Adapter

Use Scenario: High-density 1 kW server power supply operating in continuous conduction mode (CCM) PFC stage.

IC Role / Device Role / Timing Role: Main switching element in boost PFC circuit, switching at 65–100 kHz with 10 A peak inductor current.

Use Value: Low R_DS(on) (530 mΩ typ.) and low Q_g (19 nC) reduce total losses to <1.8 W at full load, improving system efficiency to ≥96%.

Use Scenario: 300 W industrial AC-DC adapter with universal input (85–265 VAC) and 24 V/12.5 A output.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback controller, operating up to 130 kHz with valley switching.

Use Value: Avalanche ruggedness (E_AS = 200 mJ) eliminates need for clamping circuits, simplifying BOM and improving reliability under line surge conditions.

Solar Microinverter Half-Bridge

Motor Drive Inverter Stage

Use Scenario: 300 W solar microinverter using interleaved half-bridge topology with transformer isolation.

IC Role / Device Role / Timing Role: High-side switch in dual active bridge, handling bidirectional 600 V DC link with 8 A RMS current.

Use Value: Controlled diode recovery (Q_rr = 2.12 µC) minimizes shoot-through risk during dead-time transitions, enabling tighter timing control.

Use Scenario: 750 W BLDC motor drive for HVAC compressors, operating from 300–400 V DC bus.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter leg, switching at 16 kHz with 10 A peak phase current.

Use Value: R_thJC = 1.79 °C/W allows direct mounting to aluminum heatsink, maintaining T_J < 125 °C without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK60Z	600 V, 520 mΩ typ., 12 A, Zener-protected gate; higher Q_g (32 nC); same DPAK package.	Higher current rating suits higher-power PFC, but increased gate charge raises driver loss at >150 kHz.	Select when needing higher ID rating and gate protection, accepting trade-off in switching speed.
FQP10N60C	600 V, 650 mΩ max., 10 A, standard planar MOSFET; no avalanche rating; TO-220 package.	Lacks avalanche ruggedness and has higher R_DS(on); unsuitable for unclamped inductive loads or high-reliability industrial use.	Acceptable only in cost-sensitive, low-stress applications where E_AS and diode Q_rr are not critical.

Compared with STP12NK60Z, STP10NM60N offers lower gate charge and superior diode recovery for high-frequency PFC, while FQP10N60C lacks avalanche rating and thermal performance-making STP10NM60N optimal for compact, high-efficiency, and rugged industrial switching.

Availability

STP10NM60N is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and solar microinverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STP10NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh™ high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-power-density switched-mode power conversion in industrial and renewable energy systems.

FAQ

Is STP10NM60N pin-compatible with STD10NM60N?

Yes - both share identical DPAK (TO-252) package, pinout (G-S-D), and electrical specifications. STD10NM60N is the tape-and-reel version; STP10NM60N is the tube-packaged variant. Mechanical dimensions, thermal data, and absolute maximum ratings are fully aligned per DS11416 Rev 2.

What is the maximum recommended gate drive voltage?

The absolute maximum gate-source voltage is ±25 V, but ST recommends limiting V_GS to +10 V to ensure stable R_DS(on) and avoid overstressing the gate oxide. Gate threshold voltage ranges from 2–4 V, allowing reliable turn-on with standard 12 V logic-level drivers.

Does STP10NM60N require a gate resistor for safe operation?

Yes - a series gate resistor (typically 4.7–10 Ω) is required to damp parasitic oscillation, limit peak gate current, and control dV/dt during switching. Without it, ringing can exceed V_GS rating and cause erratic turn-on or shoot-through in bridge configurations.

Can STP10NM60N replace STP10NK60Z in existing designs?

No - STP10NK60Z uses older planar technology with higher R_DS(on) (650 mΩ), no avalanche rating, and different dynamic parameters. While pinout matches, substituting it risks thermal runaway and failure under inductive switching stress due to missing E_AS and degraded Q_rr performance.

STP10NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 550mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 540 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP10NM60N FAQ

1.How can I place an order for STP10NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STP10NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP10NM60N reliable?

The price and inventory of STP10NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP10NM60N is usually 5 days.

3.What payment methods are accepted for STP10NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP10NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP10NM60N?

STP10NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP10NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP10NM60N?

For technical support, including STP10NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP10NM60N requirements.

6.How does Aetrix verify that STP10NM60N is sourced from the original manufacturer or authorized distributors?

All STP10NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP10NM60N meets industry standards.

7.What is the process for return or replacement of STP10NM60N?

All STP10NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STP10NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP10NM60N part is unused and in its original packaging.

Return procedure for STP10NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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