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STMicroelectronics STP10NM60ND

Part No.:
STP10NM60ND
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixSTP10NM60ND.pdf
Description:
MOSFET N-CH 600V 8A TO220
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:626

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Product details

Overview

STP10NM60ND from STMicroelectronics is a 600 V, 10 A N-channel Power MOSFET in TO-220 package, featuring 0.7 Ω RDS(on) at VGS = 10 V, 100% avalanche-rated operation, and fast switching with 45 ns turn-off delay time. It serves as a high-voltage power switch in offline SMPS, lighting ballasts, and AC motor controls.

For engineers reviewing the STP10NM60ND datasheet, STP10NM60ND pinout, STP10NM60ND application, or STP10NM60ND equivalent, key selection criteria include breakdown voltage rating, gate threshold consistency, safe operating area (SOA) under repetitive avalanche, thermal resistance (RthJC = 1.25 °C/W), and JEDEC qualification for industrial temperature range (−55 to +150 °C).

Technical Context

This MOSFET employs ST's proprietary SuperMESH™ technology to achieve low on-resistance while maintaining robust avalanche capability and reduced gate charge (Qg = 32 nC). Its body diode exhibits soft recovery with reverse recovery time (trr) of 220 ns and peak reverse recovery current (IRRM) of 9 A.

The device operates in enhancement mode with gate threshold voltage (VGS(th)) ranging from 2.0 V to 4.0 V, and is characterized for linear-mode (SOA) operation up to 100 µs at 25 °C ambient, supporting reliable hard-switching in flyback and resonant converters.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS600 V - supports universal AC input (85–265 VAC) with ≥2× safety margin in primary-side switching
RDS(on) max0.7 Ω @ VGS = 10 V - enables <1.5 W conduction loss at 10 A DC, reducing heatsink requirements
ID continuous10 A @ TC = 25 °C - rated for sustained current in thermally managed PCB layouts
EAS420 mJ - guarantees single-pulse avalanche energy handling without failure in overvoltage transients
Qg32 nC - lowers gate drive power and enables use with standard 1-A peak gate drivers
trr220 ns - minimizes switching losses during diode commutation in bridge and LLC topologies
RthJC1.25 °C/W - allows direct junction-to-heatsink thermal path design with predictable temperature rise

Pinout & Package

Package: TO-220AB, through-hole, single-ended heat sink mounting. Standard 3-pin configuration with isolated tab (drain-connected).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Power return node for load currentLow-impedance connection point for PCB ground plane routing; referenced for gate drive
Pin 2 (Gate)Control terminal for channel conductionHigh-impedance input requiring <5 VGS(th) to initiate turn-on; sensitive to ESD
Pin 3 (Drain)Main high-voltage power output nodeInternally bonded to metal tab; must be electrically isolated from heatsink unless drain-referenced layout

Key Features

FeatureDesign Value
100% Avalanche TestedEach unit validated for single-pulse EAS ≥ 420 mJ - eliminates need for external snubbers in inductive load switching
Low Gate Charge (Qg)32 nC enables efficient 65–100 kHz operation with minimal driver dissipation
Enhanced dv/dt RuggednessRated for 4.5 V/ns - prevents spurious turn-on in high-noise SMPS environments
JEDEC QualifiedQualified per JESD47 - ensures reliability across industrial temperature range (−55 to +150 °C)
Soft Body Diode Recoverytrr = 220 ns with low IRRM - reduces EMI and stress on synchronous rectifiers

Applications

LED Street Lighting DriverIndustrial AC Motor Starter

Use Scenario: Constant-current buck-boost LED driver operating from 220 VAC mains with active PFC stage.

IC Role / Device Role / Timing Role: Primary-side high-side switch in flyback converter delivering 30–60 W output.

Use Value: 600 V rating accommodates line surges up to 380 VAC; 0.7 Ω RDS(on) limits conduction loss to <1.2 W at full load.

Use Scenario: Soft-start circuit for 0.75 kW induction motor in pump control panel.

IC Role / Device Role / Timing Role: Voltage-controlled power switch enabling controlled ramp-up of stator voltage.

Use Value: Repetitive avalanche rating handles back-EMF spikes during abrupt stop; SOA supports 100 ms linear-mode operation.

Offline Switch-Mode Power SupplyElectronic Ballast for HID Lamps

Use Scenario: 45 W open-frame adapter with quasi-resonant controller and universal AC input.

IC Role / Device Role / Timing Role: Main switching element in QR flyback topology operating at variable frequency up to 130 kHz.

Use Value: Low Qg and fast toff reduce total switching loss to <0.8 W; TO-220 package simplifies thermal management.

Use Scenario: High-frequency electronic ballast driving 70 W metal halide lamp with ignition pulse generation.

IC Role / Device Role / Timing Role: Series switch modulating lamp current at 50–100 kHz while sustaining 400 V lamp ignition pulses.

Use Value: 600 V VDSS withstands 3× lamp open-circuit voltage; soft diode recovery suppresses RF noise during zero-cross transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPP60R190C6 (Infineon)650 V, 0.19 Ω RDS(on), 65 W PD, CoolMOS™ C6 technologyLower RDS(on) but higher gate charge (Qg = 44 nC); requires stronger gate driverSelect when lower conduction loss dominates over switching loss and gate drive capability permits
FQP10N60 (ON Semiconductor)600 V, 0.75 Ω RDS(on), no avalanche rating, higher RthJC (1.5 °C/W)Lacks guaranteed avalanche ruggedness; not qualified for repetitive SOA operationAcceptable only in non-critical, low-transient environments with conservative derating

Compared with IPP60R190C6 and FQP10N60, STP10NM60ND delivers balanced trade-offs: certified avalanche capability enables robust transient handling without added protection components, while its moderate Qg and proven SOA support cost-sensitive industrial designs where reliability under overload is mandatory.

Availability

STP10NM60ND is available at Aetrix Electronics and suitable for offline switch-mode power supplies, LED lighting drivers, and AC motor control systems requiring stable component supply and long-term industrial lifecycle support.

Supply support for STP10NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STP10NM60ND belongs to ST's Power MOSFET portfolio targeting high-efficiency, high-reliability AC/DC conversion and motor control, with emphasis on ruggedness, manufacturability, and qualification for extended temperature operation.

FAQ

What is the maximum allowable gate-source voltage for STP10NM60ND?

The absolute maximum VGS is ±25 V. Operation above ±20 V is not recommended due to increased risk of oxide damage. Gate drive circuits must clamp voltage within this limit using Zener diodes or integrated gate drivers with rail-to-rail clamping. Exceeding ±25 V risks permanent gate oxide breakdown, even with short-duration transients.

Does STP10NM60ND require a heatsink in typical 10 A switching applications?

Yes - at 10 A continuous current and 100 kHz switching, junction temperature exceeds 150 °C without heatsinking. With RthJC = 1.25 °C/W and typical RthCS + RthSA ≈ 2.5 °C/W, a minimum heatsink thermal resistance of ≤ 4.0 °C/W is required to maintain TJ ≤ 125 °C at 25 °C ambient. PCB copper area alone is insufficient for full-load operation.

Can STP10NM60ND be used in synchronous rectification topologies?

No - it is not optimized for synchronous rectification. Its body diode has relatively high forward voltage (VSD ≈ 1.4 V) and slow recovery (trr = 220 ns), resulting in excessive conduction and switching losses compared to dedicated SR MOSFETs. Use only as a primary-side switch; pair with Schottky or GaN devices for secondary-side rectification.

Is STP10NM60ND suitable for linear-mode (constant-current source) operation?

Yes - it is fully characterized for linear-mode operation per JEDEC SOA curves, supporting 100 µs pulse width at 10 A and 400 V with TC = 25 °C. Derating is required above 25 °C case temperature; maximum linear power dissipation drops to 25 W at TC = 100 °C. Always verify SOA compliance with actual voltage/current/time profiles.

STP10NM60ND Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
FDmesh™ II
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
600mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
577 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
70W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220

STP10NM60ND FAQ

1.How can I place an order for STP10NM60ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STP10NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP10NM60ND reliable?

The price and inventory of STP10NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP10NM60ND is usually 5 days.

3.What payment methods are accepted for STP10NM60ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP10NM60ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP10NM60ND?

STP10NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP10NM60ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP10NM60ND?

For technical support, including STP10NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP10NM60ND requirements.

6.How does Aetrix verify that STP10NM60ND is sourced from the original manufacturer or authorized distributors?

All STP10NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP10NM60ND meets industry standards.

7.What is the process for return or replacement of STP10NM60ND?

All STP10NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STP10NM60ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP10NM60ND part is unused and in its original packaging.

Return procedure for STP10NM60ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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