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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP10P6F6

Name: STP10P6F6
Brand: STMicroelectronics
SKU: STP10P6F6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP10P6F6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP10P6F6.pdf

Description:: MOSFET P-CH 60V 10A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:442

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Product details

Overview

STP10P6F6 from STMicroelectronics is a P-channel -60 V, 0.13 Ω typ. R_DS(on), -10 A Power MOSFET in TO-220 package, designed for high-efficiency DC-DC conversion and load switching in industrial power supplies and motor control circuits.

For engineers reviewing the STP10P6F6 datasheet, STP10P6F6 pinout, STP10P6F6 application, or STP10P6F6 equivalent, this device offers verified avalanche ruggedness (80 mJ), low gate charge (6.4 nC), and thermal resistance of 5 °C/W (junction-to-case), critical for thermally constrained high-side switch designs.

Technical Context

This P-channel MOSFET uses ST's STripFET™ F6 trench-gate technology to achieve low on-resistance and fast switching with minimal gate drive power loss. Its negative threshold voltage (-2 to -4 V) enables direct logic-level gate drive from microcontrollers in high-side configurations.

The device features an integrated source-drain diode with 20 ns reverse recovery time and 17.8 nC Q_rr, supporting synchronous rectification and inductive load commutation without external freewheeling diodes in many applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Supports 48 V rail systems with 20 % derating margin against transients.
R_DS(on) max	0.16 Ω @ V_GS = -10 V - Limits conduction loss to ≤0.8 W at -10 A continuous current.
Q_g	6.4 nC - Enables <100 ns turn-on/turn-off with 4.7 Ω gate resistor, reducing switching loss.
E_AS	80 mJ - Withstands single-pulse inductive energy spikes up to 40 V × 3 A × 0.67 ms without failure.
R_thj-case	5 °C/W - Allows 35 W dissipation at T_C = 25 °C, enabling heatsink-free operation below ~15 W.
I_D (T_C = 100 °C)	-7.2 A - Specifies usable current in enclosed enclosures with case temperature up to 100 °C.
V_SD	-1.1 V @ I_SD = -5 A - Defines forward drop of internal body diode for freewheeling path design.

Pinout & Package

STP10P6F6 is housed in a TO-220 package with three terminals: Gate (G), Drain (D), and Source (S). The metal tab is electrically connected to the Drain and serves as the primary heat transfer surface. Mounting requires electrical isolation if the heatsink is grounded.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate (G)	Control terminal; accepts -10 V to +20 V V_GS; 100 nA leakage ensures low static power draw.
2 (Middle)	Drain (D)	Main current input; tied to metal tab; rated for -60 V blocking and -40 A pulsed current.
3 (Right)	Source (S)	Current return path; referenced to system ground in high-side switch configuration.

Key Features

Feature	Design Value
Very low R_DS(on)	0.13 Ω typ. @ V_GS = -10 V reduces conduction loss by >35 % vs. legacy P-channel MOSFETs in same package.
Low gate charge	6.4 nC total charge minimizes driver IC loading and enables efficient PWM at 100–500 kHz.
High avalanche ruggedness	80 mJ single-pulse rating allows reliable operation in unclamped inductive switching without snubbers.
STripFET™ F6 trench structure	Enables optimized cell pitch and reduced gate-drain capacitance (C_rss = 20 pF), improving dv/dt immunity.
ECOPACK® compliant	Meets RoHS and halogen-free requirements per ST's environmental packaging standard.

Applications

Industrial DC-DC Converters

Motor Control H-Bridge

Use Scenario: High-side synchronous rectifier in isolated 24 V → 5 V flyback converter.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as active rectifier, replacing Schottky diode to reduce forward loss.

Use Value: Achieves ≥3 % efficiency gain over diode-based rectification due to 0.13 Ω R_DS(on) and low Q_rr.

Use Scenario: Upper-leg switch in 24 V brushed DC motor driver with PWM speed control.

IC Role / Device Role / Timing Role: High-side load switch controlling motor voltage polarity and braking via source-follower configuration.

Use Value: Avalanche rating supports safe energy recirculation during PWM off-time without external clamp diodes.

Hot-Swap Power Controllers

Redundant Power OR-ing

Use Scenario: Inrush-limited hot-swap circuit protecting backplane from capacitive load surges.

IC Role / Device Role / Timing Role: P-channel MOSFET used in linear mode with gate-controlled slew rate to limit dI/dt during insertion.

Use Value: Low gate charge and precise V_GS(th) (-2 to -4 V) enable stable analog gate biasing for controlled ramp-up.

Use Scenario: OR-ing diode replacement in dual 48 V telecom power supply redundancy scheme.

IC Role / Device Role / Timing Role: Back-to-back P-channel MOSFET pair implementing ideal diode function with reverse-current blocking.

Use Value: 0.13 Ω R_DS(on) cuts conduction loss by >90 % vs. 40 mΩ Schottky, reducing thermal footprint by 2.5×.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540N	R_DS(on) = 0.2 Ω max @ V_GS = -10 V; Q_g = 80 nC; E_AS not specified.	Higher conduction loss and slower switching; unsuitable for >100 kHz PWM or high-reliability avalanche environments.	Acceptable only for low-frequency, low-power linear switching where cost outweighs efficiency.
IXTP10P60P	R_DS(on) = 0.75 Ω max; V_DS = -600 V; Q_g = 22 nC; TO-220 package.	Designed for high-voltage AC line switching, not optimized for 48 V DC systems; 5.8× higher R_DS(on).	Select only when 600 V blocking is required; otherwise, STP10P6F6 delivers superior efficiency and thermal performance at 60 V.

Compared with IRF9540N and IXTP10P60P, STP10P6F6 provides the lowest R_DS(on) and gate charge among TO-220 P-channel MOSFETs rated for -60 V, making it optimal for high-efficiency, high-reliability 24–48 V industrial power switching where thermal headroom and switching loss are critical.

Availability

STP10P6F6 is available at Aetrix Electronics and suitable for industrial DC-DC converters, motor control H-bridges, and hot-swap power controllers requiring stable component supply and long-term production continuity.

Supply support for STP10P6F6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, automotive ICs, and discrete devices with vertical manufacturing capability.

STP10P6F6 belongs to the STripFET™ F6 Power MOSFET product line, engineered specifically for high-efficiency, high-ruggedness switching in industrial and telecom power systems operating up to 60 V.

FAQ

What is the maximum continuous drain current for STP10P6F6 at 100 °C case temperature?

The maximum continuous drain current is -7.2 A at T_C = 100 °C, as defined in Table 2 of the datasheet. This rating accounts for thermal derating and ensures safe operation within the SOA limits when mounted on an adequately sized heatsink.

Can STP10P6F6 be driven directly by a 3.3 V microcontroller GPIO?

No - its gate threshold voltage range is -2 V to -4 V, and full enhancement requires V_GS ≤ -10 V. A 3.3 V GPIO cannot provide sufficient negative gate drive; a level-shifting gate driver or charge pump is required for logic-level control.

Is the metal tab of the TO-220 package electrically isolated from the leads?

No - the metal tab is internally connected to the Drain terminal (Pin 2). Electrical isolation using insulating washers or mica pads is mandatory when mounting to a grounded heatsink to prevent short-circuiting the drain node.

Does STP10P6F6 include built-in ESD protection on the gate?

Yes - the device incorporates gate oxide protection structures meeting HBM ESD Class 2 (≥2 kV) per JEDEC JESD22-A114, as confirmed in ST's reliability reports for the STripFET™ F6 family. No external gate Zener is required for typical handling and PCB assembly.

STP10P6F6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VI

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 340 pF @ 48 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP10P6F6 FAQ

1.How can I place an order for STP10P6F6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP10P6F6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP10P6F6 reliable?

The price and inventory of STP10P6F6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP10P6F6 is usually 5 days.

3.What payment methods are accepted for STP10P6F6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP10P6F6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP10P6F6?

STP10P6F6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP10P6F6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP10P6F6?

For technical support, including STP10P6F6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP10P6F6 requirements.

6.How does Aetrix verify that STP10P6F6 is sourced from the original manufacturer or authorized distributors?

All STP10P6F6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP10P6F6 meets industry standards.

7.What is the process for return or replacement of STP10P6F6?

All STP10P6F6 units undergo pre-shipment inspection (PSI). If there is an issue with STP10P6F6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP10P6F6 part is unused and in its original packaging.

Return procedure for STP10P6F6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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