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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP110N10F7

Name: STP110N10F7
Brand: STMicroelectronics
SKU: STP110N10F7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP110N10F7

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP110N10F7.pdf

Description:: MOSFET N CH 100V 110A TO-220

Quantity:: RFQ Add To RFQ list

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Inventory:156

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Product details

Overview

STP110N10F7 from STMicroelectronics is an N-channel 100 V, 5.1 mΩ typ. R_DS(on), 110 A continuous drain current Power MOSFET in TO-220 package, utilizing STripFET™ VII DeepGATE™ technology. It delivers ultra-low conduction loss and 100% avalanche-tested ruggedness for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the STP110N10F7 datasheet, STP110N10F7 pinout, STP110N10F7 application, or STP110N10F7 equivalent, key selection criteria include its 1.00 °C/W junction-to-case thermal resistance, 150 W total power dissipation at T_C = 25 °C, 72 nC total gate charge, and 415 A pulsed drain current capability under safe operating area constraints.

Technical Context

This MOSFET employs ST's 7th-generation STripFET™ process with a redesigned gate structure to minimize R_DS(on) while maintaining robust switching performance. Its 100 V V_DS rating and ±20 V V_GS range support industrial off-line and 48 V bus applications requiring high-current switching.

The device features a fast body diode with 77 ns reverse recovery time (T_j = 150 °C) and 150 nC Q_rr, enabling efficient synchronous rectification and hard-switched topologies. Its SOA is characterized up to 10 ms pulses, with thermal impedance optimized for heatsink-mounted operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports 48 V and 96 V DC bus systems with 2× voltage margin for transients.
R_DS(on) typ.	5.1 mΩ at V_GS = 10 V, I_D = 55 A - Enables <1.5 W conduction loss at 55 A, critical for high-current power stages.
I_D cont. @ T_C = 25 °C	110 A - Rated for continuous operation with external heatsinking, suitable for motor phase switches.
P_TOT	150 W @ T_C = 25 °C - High power handling enables compact thermal design when mounted on ≥100 cm² copper area.
R_thj-case	1.00 °C/W - Allows precise junction temperature estimation using case temperature measurement and thermal interface material selection.
Q_g	72 nC - Determines gate driver current requirement (~1.4 A peak for 50 ns rise time), guiding driver IC selection.
E_AS	490 mJ - Confirmed single-pulse avalanche energy supports unclamped inductive switching without failure.

Pinout & Package

STP110N10F7 is housed in a standard TO-220 package with three leads and an electrically connected tab (Drain). The package provides mechanical robustness and direct thermal path to heatsinks via the metal tab.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node in half-bridge configurations.
2 (Gate)	Control input	High-impedance MOSFET gate requiring <100 nA leakage current; driven by dedicated gate driver ICs.
3 (Drain) + Tab	Power output / Heat sink interface	Electrically tied to Drain; must be isolated from heatsink unless system design permits common-Drain topology.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	5.1 mΩ typ. reduces conduction losses by >30% vs. prior-generation 100 V MOSFETs in same package.
100% avalanche tested	Guarantees ruggedness against inductive kickback in motor control and relay driving without derating.
STripFET™ VII DeepGATE™	New gate architecture lowers gate charge (72 nC) while preserving threshold voltage stability over temperature.
Fast body diode	77 ns t_rr and 4.3 A I_RRM enable use in freewheeling paths with minimal voltage overshoot.
High pulsed current	415 A I_DM supports short-duration surge loads such as motor startup or capacitor charging.

Applications

Motor Drive Half-Bridge

DC-DC Converter Primary Switch

Use Scenario: High-current BLDC motor phase leg in industrial automation drives.

IC Role / Device Role / Timing Role: Low-side or high-side switching element in 3-phase inverter stage, switching at 20–50 kHz.

Use Value: 5.1 mΩ R_DS(on) limits I²R loss to <3.1 W at 78 A RMS, reducing heatsink size by 40% vs. 8 mΩ alternatives.

Use Scenario: Primary-side switch in 1 kW isolated LLC resonant converter.

IC Role / Device Role / Timing Role: Main power switch conducting 110 A peak during resonant transitions, gated with 50 ns precision.

Use Value: 72 nC Q_g enables clean 50 ns turn-on with 1.4 A gate driver, minimizing switching loss contribution.

Uninterruptible Power Supply (UPS) Inverter

Industrial DC Circuit Breaker

Use Scenario: Output H-bridge in 3 kVA online UPS delivering sine-wave AC from 48 V DC bus.

IC Role / Device Role / Timing Role: Bidirectional switching element supporting 110 A continuous conduction and 415 A fault current interruption.

Use Value: 490 mJ E_AS withstands 100 µs inductive fault events without degradation, eliminating need for external snubbers.

Use Scenario: Solid-state main contactor in 100 A industrial battery disconnect unit.

IC Role / Device Role / Timing Role: Normally-open power switch activated during emergency shutdown, carrying full load current until mechanical breaker engages.

Use Value: 175 °C max junction temperature and -55 °C min storage rating ensure reliable operation across harsh factory environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH110N10L2	R_DS(on) = 6.2 mΩ, Q_g = 85 nC, TO-247 package, no integrated diode optimization	Higher gate drive loss and slower diode recovery (t_rr = 110 ns) limit efficiency in high-frequency ZVS/ZCS topologies	Prefer STP110N10F7 where board space and thermal interface simplicity (TO-220) outweigh TO-247 mounting flexibility
IRFP110N10LPbF	R_DS(on) = 6.8 mΩ, Q_g = 92 nC, legacy TrenchFET® Gen 2, higher R_thj-case = 1.25 °C/W	Lower avalanche rating (E_AS = 320 mJ) and reduced SOA margin constrain use in unclamped inductive loads	STP110N10F7 offers superior ruggedness and thermal performance for mission-critical industrial switching

Compared with IXTH110N10L2 and IRFP110N10LPbF, STP110N10F7 delivers lower conduction loss, faster diode recovery, and verified avalanche capability-making it optimal for thermally constrained, high-reliability 100 V power stages where TO-220 mounting is acceptable.

Availability

STP110N10F7 is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term industrial availability.

Supply support for STP110N10F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STP110N10F7 belongs to the STripFET™ VII Power MOSFET product line, engineered specifically for high-current, high-efficiency switching in industrial motor control, renewable energy inverters, and server power supplies.

FAQ

What is the maximum continuous drain current for STP110N10F7 at 100 °C case temperature?

The maximum continuous drain current is 76 A at T_C = 100 °C, as specified in Table 2 of the official datasheet (DocID024058 Rev 2). This rating accounts for thermal derating due to junction-to-case thermal resistance (1.00 °C/W) and maximum junction temperature (175 °C).

Does STP110N10F7 have an integrated body diode, and what are its key recovery parameters?

Yes, STP110N10F7 includes a monolithic source-drain body diode. At T_j = 150 °C, it exhibits 77 ns reverse recovery time (t_rr), 150 nC reverse recovery charge (Q_rr), and 4.3 A peak reverse recovery current (I_RRM), per Table 7 in the datasheet.

Is STP110N10F7 suitable for avalanche operation, and how is this validated?

Yes-STP110N10F7 is 100% avalanche tested per production test flow, with a guaranteed single-pulse avalanche energy (E_AS) of 490 mJ at T_j = 25 °C, V_DD = 50 V, and I_D = 18 A, as defined in Table 2 and confirmed in Figure 19 test circuit.

What is the gate threshold voltage range, and how does it vary with temperature?

V_GS(th) ranges from 2.5 V to 4.5 V at T_C = 25 °C (Table 4), and decreases linearly with rising junction temperature-normalized to ~0.7× at T_j = 175 °C (Figure 12), ensuring predictable turn-on behavior across industrial temperature ranges.

STP110N10F7 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VII

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 55A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5500 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP110N10F7 FAQ

1.How can I place an order for STP110N10F7 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP110N10F7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP110N10F7 reliable?

The price and inventory of STP110N10F7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP110N10F7 is usually 5 days.

3.What payment methods are accepted for STP110N10F7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP110N10F7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP110N10F7?

STP110N10F7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP110N10F7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP110N10F7?

For technical support, including STP110N10F7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP110N10F7 requirements.

6.How does Aetrix verify that STP110N10F7 is sourced from the original manufacturer or authorized distributors?

All STP110N10F7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP110N10F7 meets industry standards.

7.What is the process for return or replacement of STP110N10F7?

All STP110N10F7 units undergo pre-shipment inspection (PSI). If there is an issue with STP110N10F7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP110N10F7 part is unused and in its original packaging.

Return procedure for STP110N10F7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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