Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP110N55F6

Name: STP110N55F6
Brand: STMicroelectronics
SKU: STP110N55F6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STP110N55F6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP110N55F6.pdf

Description:: MOSFET N-CH 55V 110A TO220

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:413

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STP110N55F6 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET using STripFET™ F6 trench-gate technology, rated for 55 V V_DS, 4.5 mΩ typical R_DS(on) at V_GS = 10 V and 60 A, and 110 A continuous drain current at T_C = 25 °C. It delivers high avalanche ruggedness and low gate charge for efficient high-current switching in DC-DC converters and motor drives.

For engineers reviewing the STP110N55F6 datasheet, STP110N55F6 pinout, STP110N55F6 application, or STP110N55F6 equivalent, key selection criteria include its 1 °C/W junction-to-case thermal resistance, 126 nC total gate charge, 7390 pF input capacitance, and TO-220 package compatibility with standard heatsink mounting.

Technical Context

This MOSFET employs a trench-gate STripFET™ F6 structure optimized for reduced R_DS(on) and improved switching efficiency. Its gate threshold voltage (2–4 V) enables direct drive from 3.3 V and 5 V logic, while the integrated body diode supports synchronous rectification and flyback recovery.

The device operates up to 175 °C junction temperature and sustains unclamped inductive switching with high avalanche energy rating. Its 504 pF output capacitance and 355 pF reverse transfer capacitance support stable operation in hard-switched topologies at frequencies up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage for 48 V nominal bus systems with margin
R_DS(on) typ.	4.5 mΩ at V_GS = 10 V, I_D = 60 A - Enables <1 W conduction loss at 100 A in parallel configurations
I_D cont. (T_C = 25 °C)	110 A - Supports high-current power stages without forced air cooling
Q_g	126 nC - Determines gate driver power requirement and switching speed trade-off
R_thj-case	1 °C/W max - Allows direct thermal coupling to heatsinks for >100 W dissipation capability
C_iss	7390 pF - Impacts Miller effect and gate drive loop stability in high-dV/dt environments
V_GS(th)	2–4 V - Ensures reliable turn-on with standard microcontroller GPIO or level-shifted drivers

Pinout & Package

Supplied in a through-hole TO-220 package with isolated tab (Type A), featuring three terminals: Gate (pin 1), Drain (pin 2 and metal tab), Source (pin 3). The tab is electrically connected to the Drain and serves as primary heat path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; requires low-impedance drive due to 126 nC Q_g; sensitive to ESD
Pin 2 + Tab	Drain	Main high-side current path; electrically tied to heatsink; must be insulated if heatsink is grounded
Pin 3	Source	Reference node for gate drive; carries full load current; used for current sensing in low-side configurations

Key Features

Feature	Design Value
Low gate charge	126 nC total gate charge reduces driver losses and enables faster switching transitions
Very low on-resistance	4.5 mΩ R_DS(on) minimizes conduction loss in high-current 48 V industrial and automotive power stages
High avalanche ruggedness	Rated for unclamped inductive switching - supports robust operation in relay/snubberless motor control
Enhanced thermal performance	1 °C/W R_thj-case allows >100 W continuous dissipation with moderate heatsinking

Applications

DC-DC Converters

Motor Drives

Use Scenario: Primary switch in 48 V input, 12 V output synchronous buck converter for telecom power supplies.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET operating at 200 kHz with 100 A peak current.

Use Value: 4.5 mΩ R_DS(on) limits conduction loss to <0.5 W at 50 A, improving full-load efficiency by ≥1.2% vs. comparable 6.5 mΩ devices.

Use Scenario: Half-bridge leg in 3-phase BLDC inverter for HVAC fan motors.

IC Role / Device Role / Timing Role: Low-side switching element handling 110 A continuous phase current with PWM at 10–20 kHz.

Use Value: 126 nC Q_g enables gate drive with standard 2 A peak drivers; 1 °C/W R_thj-case maintains T_j < 130 °C under natural convection.

Power Supplies

Industrial Controls

Use Scenario: Output rectifier in high-current AC-DC server PSU secondary side.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes in LLC resonant topology.

Use Value: Integrated body diode with 1.5 V V_SD and 44 ns t_rr enables zero-voltage switching recovery with minimal reverse recovery loss.

Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: Load switch controlling 48 V solenoid or valve with 110 A surge capability.

Use Value: 440 A pulsed drain current (I_DM) and high avalanche energy withstand allow safe operation during inductive turn-off transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFP110N55L	R_DS(on) = 5.3 mΩ typ., Q_g = 132 nC, TO-247 package	Larger footprint and higher thermal resistance (0.75 °C/W) require larger heatsink area	Preferred when higher surge current margin and lower R_DS(on) tolerance are required over TO-220 mechanical constraints
IXFH110N55X3	R_DS(on) = 4.8 mΩ typ., Q_g = 110 nC, TO-247 package, enhanced dv/dt immunity	Superior noise immunity but incompatible pinout and mounting hole pattern	Selected for EMI-sensitive industrial inverters where gate oscillation must be minimized

Compared with IRFP110N55L and IXFH110N55X3, the STP110N55F6 offers optimal balance of low R_DS(on), compact TO-220 form factor, and proven avalanche robustness - making it preferred for cost-sensitive, space-constrained 48 V power stages requiring field-proven reliability.

Availability

STP110N55F6 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and industrial control systems requiring stable component supply and long-term manufacturability.

Supply support for STP110N55F6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

The STripFET™ F6 product line targets high-efficiency power conversion with ultra-low R_DS(on) and fast switching, specifically engineered for 24–60 V systems in motor control, renewable energy inverters, and server power supplies.

FAQ

Is STP110N55F6 suitable for high-frequency switching above 500 kHz?

No - its 7390 pF C_iss and 126 nC Q_g result in significant gate drive power and switching losses above 300 kHz. It is optimized for 50–300 kHz hard-switched applications like buck converters and motor drives, not MHz-range resonant topologies.

Can STP110N55F6 be used in a high-side configuration with standard gate drivers?

Yes, but only with a dedicated high-side gate driver capable of providing floating 10 V gate bias referenced to the switching node. Its 2–4 V V_GS(th) and 126 nC Q_g demand precise timing and sufficient peak current (>2 A) to avoid shoot-through in half-bridge setups.

What is the maximum allowable case temperature for continuous operation?

The maximum continuous case temperature is 100 °C, corresponding to 85 A I_D rating per datasheet Table 2. Exceeding this requires derating - total dissipation drops linearly at 1 W/°C beyond 25 °C ambient, limited by 150 W at T_C = 25 °C and 1 °C/W thermal resistance.

Does STP110N55F6 have built-in ESD protection on the gate?

No - the device has no integrated gate protection diode. External Zener clamping (e.g., 15 V TVS between gate and source) is mandatory in all designs to prevent gate oxide rupture from transient overvoltage, especially in automated assembly or high-noise industrial environments.

STP110N55F6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VI

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.2mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP110N55F6 FAQ

1.How can I place an order for STP110N55F6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP110N55F6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP110N55F6 reliable?

The price and inventory of STP110N55F6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP110N55F6 is usually 5 days.

3.What payment methods are accepted for STP110N55F6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP110N55F6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP110N55F6?

STP110N55F6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP110N55F6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP110N55F6?

For technical support, including STP110N55F6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP110N55F6 requirements.

6.How does Aetrix verify that STP110N55F6 is sourced from the original manufacturer or authorized distributors?

All STP110N55F6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP110N55F6 meets industry standards.

7.What is the process for return or replacement of STP110N55F6?

All STP110N55F6 units undergo pre-shipment inspection (PSI). If there is an issue with STP110N55F6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP110N55F6 part is unused and in its original packaging.

Return procedure for STP110N55F6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…