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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP11N52K3

Name: STP11N52K3
Brand: STMicroelectronics
SKU: STP11N52K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP11N52K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP11N52K3.pdf

Description:: MOSFET N-CH 525V 10A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP11N52K3 from STMicroelectronics is an N-channel SuperMESH3™ Power MOSFET in TO-220 package, rated for 525 V drain-source voltage, 0.41 Ω typical R_DS(on) at V_GS = 10 V and 5 A, 10 A continuous drain current at T_C = 25 °C, and 125 W total power dissipation. It integrates Zener-protected gate-source terminals and exhibits enhanced diode reverse recovery (t_rr = 270 ns, Q_rr = 2700 nC) for high-reliability switching in offline SMPS.

For engineers reviewing the STP11N52K3 datasheet, STP11N52K3 pinout, STP11N52K3 application, or STP11N52K3 equivalent, key selection criteria include avalanche ruggedness (E_AS = 170 mJ), dv/dt immunity (12 V/ns), low gate charge (Q_g = 51 nC), and thermal resistance (R_thj-case = 1 °C/W), critical for high-voltage flyback and resonant converters.

Technical Context

This MOSFET employs ST's SuperMESH3™ vertical structure-evolved from SuperMESH™-to achieve ultra-low on-resistance while maintaining high voltage blocking and robust unclamped inductive switching capability. Its 100% avalanche-tested rating ensures reliable operation under transient overloads without external snubbers.

The integrated back-to-back Zener diodes clamp gate-source voltage to ±30 V (BVGSO), eliminating need for external gate protection components. Dynamic performance is optimized via minimized intrinsic capacitance (C_iss = 1400 pF, C_oss = 110 pF) and low gate input resistance (R_g = 1–7 Ω), enabling fast, low-loss switching at up to 100 kHz in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	525 V - Withstands full mains-derived DC bus voltages in universal-input offline converters without derating.
R_DS(on) max	0.51 Ω - Ensures ≤0.51 W conduction loss at 1 A ID, supporting thermally constrained PCB layouts.
I_D cont @ T_C=25°C	10 A - Delivers sufficient current headroom for 60–80 W AC/DC adapters with margin for surge conditions.
E_AS	170 mJ - Enables safe single-pulse energy absorption during output short-circuit events in flyback designs.
t_rr	270 ns - Reduces switching losses and EMI generation during diode commutation in quasi-resonant topologies.
Q_g	51 nC - Lowers gate drive power requirement and allows use of cost-effective 1-A peak gate drivers.
R_thj-case	1 °C/W - Supports direct mounting to heatsinks for stable junction temperature control below 150 °C.

Pinout & Package

STP11N52K3 uses TO-220 package with isolated tab (pin 2), standard three-terminal configuration: Drain connected to metal tab, Gate on pin 1, Source on pin 3. Thermal path is optimized through tab-to-heatsink interface; electrical isolation between tab and leads is not guaranteed unless specified as insulated variant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal requiring <10 V threshold (V_GS(th) = 3–4.5 V); Zener-protected to ±30 V.
Pin 2 (TAB/D)	Drain (via metal tab)	Main high-voltage power terminal; electrically connected to tab-requires insulating washer if mounted to grounded heatsink.
Pin 3 (S)	Source	Power return and reference node for gate drive; ties to source of synchronous rectifier or PWM controller ground.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees robustness against unclamped inductive switching stress without design iteration or external clamping.
Extremely high dv/dt capability	12 V/ns rating prevents false turn-on during fast voltage transients in high-side configurations.
Gate charge minimized	51 nC total gate charge reduces driver losses and enables higher-frequency operation with lower gate drive power.
Zener-protected gate	Integrated ±30 V gate-source Zener eliminates need for discrete TVS, simplifying layout and improving reliability.
Improved diode reverse recovery	270 ns t_rr and 2700 nC Q_rr reduce switching losses and EMI in discontinuous conduction mode (DCM) flyback.

Applications

AC/DC Flyback Converter

Industrial LED Driver

Use Scenario: Universal-input (85–265 V_AC) 65 W flyback supplying constant voltage to isolated logic rails.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating in DCM at 65 kHz; handles 525 V blocking and 10 A peak current.

Use Value: Low R_DS(on) (0.41 Ω) minimizes conduction loss; 170 mJ E_AS absorbs leakage inductance energy during MOSFET turn-off.

Use Scenario: Constant-current 48 V/1.2 A LED string driver for street lighting with surge immunity to 4 kV line transients.

IC Role / Device Role / Timing Role: High-side switch in buck-derived topology; sustains 525 V transients and delivers 10 A pulsed current during dimming transitions.

Use Value: 12 V/ns dv/dt immunity prevents spurious turn-on during lightning-induced surges; Zener gate protection avoids gate oxide failure.

Offline PFC Boost Stage

DC-DC Isolated Forward Converter

Use Scenario: Active PFC stage in 300 W server PSU, operating in continuous conduction mode (CCM) at 100 kHz.

IC Role / Device Role / Timing Role: Boost switch handling 400 V DC bus and 10 A average current; subjected to high di/dt during zero-current switching.

Use Value: Low C_oss (110 pF) and fast t_rr (270 ns) reduce capacitive turn-on loss and body diode conduction time.

Use Scenario: Primary-side switch in 200 W telecom forward converter with 48 V input and 12 V/15 A output.

IC Role / Device Role / Timing Role: Hard-switched main transistor blocking 525 V during reset phase; dissipates 125 W peak power with heatsink.

Use Value: R_thj-case = 1 °C/W enables stable thermal management; 100% avalanche test ensures reliability during transformer saturation faults.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK52Z	Higher R_DS(on) (0.52 Ω typ), same V_DSS (520 V), Zener-protected, but older SuperMESH2 process.	Slightly higher conduction loss; less optimized diode recovery (t_rr = 350 ns).	Acceptable where cost sensitivity outweighs efficiency targets; not recommended for >80 kHz designs.
FQP10N50C	Lower V_DSS (500 V), higher R_DS(on) (0.55 Ω), no integrated Zener, TO-220 package.	Lacks gate protection and avalanche rating; requires external TVS and careful SOA management.	Only suitable for non-safety-critical, low-cost consumer supplies with derated input voltage.

Compared with STP12NK52Z and FQP10N50C, STP11N52K3 delivers superior dynamic performance (lower Q_g, faster t_rr), verified avalanche ruggedness, and integrated gate protection-making it the preferred choice for industrial-grade, high-reliability offline power conversion where thermal and transient margins are critical.

Availability

STP11N52K3 is available at Aetrix Electronics and suitable for AC/DC flyback converters, industrial LED drivers, and offline PFC boost stages requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for STP11N52K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STP11N52K3 belongs to the SuperMESH3™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies where avalanche capability, low gate charge, and robust diode recovery are essential.

FAQ

What is the maximum gate-source voltage rating for STP11N52K3?

The absolute maximum V_GS is ±30 V, enforced by integrated back-to-back Zener diodes with BVGSO = 30 V (I_GS = ±1 mA). This eliminates need for external gate protection in most designs, provided gate drive circuitry does not exceed this limit during transients or startup.

Can STP11N52K3 be used in hard-switched LLC resonant converters?

Yes-its low C_oss (110 pF), fast t_rr (270 ns), and 12 V/ns dv/dt rating make it suitable for primary-side switching in LLC half-bridge topologies up to 300 kHz. However, ensure ZVS conditions are met to avoid excessive body diode conduction loss, as its diode is not optimized for bidirectional soft switching.

Is the TO-220 tab of STP11N52K3 electrically isolated?

No-the metal tab is internally connected to the Drain (pin 2). Electrical isolation from heatsink requires use of insulating hardware (e.g., silicone pad + shoulder washer) and verification of dielectric withstand per application voltage. The device is not offered in an insulated TO-220 variant.

How does STP11N52K3 compare to STP11NM50N in terms of switching performance?

STP11N52K3 offers lower R_DS(on) (0.41 Ω vs. 0.48 Ω), higher V_DSS (525 V vs. 500 V), and improved diode recovery (t_rr = 270 ns vs. 320 ns), resulting in lower conduction and switching losses in high-voltage applications. Its SuperMESH3™ process also delivers better dv/dt immunity (12 V/ns vs. 9 V/ns).

STP11N52K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 525 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 510mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP11N52K3 FAQ

1.How can I place an order for STP11N52K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP11N52K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP11N52K3 reliable?

The price and inventory of STP11N52K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP11N52K3 is usually 5 days.

3.What payment methods are accepted for STP11N52K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP11N52K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP11N52K3?

STP11N52K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP11N52K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP11N52K3?

For technical support, including STP11N52K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP11N52K3 requirements.

6.How does Aetrix verify that STP11N52K3 is sourced from the original manufacturer or authorized distributors?

All STP11N52K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP11N52K3 meets industry standards.

7.What is the process for return or replacement of STP11N52K3?

All STP11N52K3 units undergo pre-shipment inspection (PSI). If there is an issue with STP11N52K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP11N52K3 part is unused and in its original packaging.

Return procedure for STP11N52K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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