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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP11N60DM2

Name: STP11N60DM2
Brand: STMicroelectronics
SKU: STP11N60DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP11N60DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP11N60DM2.pdf

Description:: MOSFET N-CH 600V 10A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP11N60DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM2 series, featuring 600 V V_(BR)DSS, 370 mΩ typ. R_DS(on), 10 A continuous drain current, and fast-recovery body diode (t_rr = 90 ns @ T_j = 25 °C). It is engineered for high-efficiency bridge topologies and ZVS phase-shift converters in industrial SMPS.

For engineers reviewing the STP11N60DM2 datasheet, STP11N60DM2 pinout, STP11N60DM2 application, or STP11N60DM2 equivalent, key selection criteria include avalanche ruggedness (E_AS = 250 mJ), low gate charge (Q_g = 16.5 nC), Zener-protected gate (±30 V), dv/dt immunity (50 V/ns), and TO-220 thermal performance (R_thj-case = 1.14 °C/W).

Technical Context

This device implements ST's MDmesh DM2 technology with optimized charge balancing for simultaneous low R_DS(on) and ultra-low Q_rr (248 nC @ 25 °C). Its fast-recovery body diode enables hard-switched and resonant topologies without external anti-parallel diodes.

The integrated back-to-back gate-source Zener diodes provide ±30 V clamping, eliminating need for external ESD protection. MOSFET dv/dt ruggedness is validated at 50 V/ns under V_DS ≤ 480 V, supporting reliable operation in noisy high-dV/dt environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	600 V - Withstands 600 V drain-source blocking voltage before avalanche conduction begins
R_DS(on) max	420 mΩ @ V_GS = 10 V, I_D = 5 A - Limits conduction loss to ≤4.2 W at 10 A continuous
Q_g	16.5 nC - Enables fast switching with low drive power; reduces gate driver losses in high-frequency designs
t_rr	90 ns @ I_SD = 10 A, di/dt = 100 A/µs - Minimizes reverse recovery loss and commutation stress in bridge legs
E_AS	250 mJ - Supports unclamped inductive switching without failure under repetitive avalanche conditions
R_thj-case	1.14 °C/W - Allows 110 W dissipation with ≤125 °C junction rise above case at steady state
dv/dt ruggedness	50 V/ns - Sustains rapid voltage transients during turn-off without spurious turn-on or latch-up

Pinout & Package

STP11N60DM2 uses a TO-220 type A package with isolated tab (Drain-connected), standard 3-pin configuration, and ECOPACK® compliance. The metal tab is electrically connected to the Drain terminal and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain	Main high-side power terminal; thermally coupled to heatsink; requires electrical isolation when mounted
G (Pin 1)	Gate	Control input; Zener-protected (±30 V); low C_iss (614 pF) eases high-speed driving
S (Pin 3)	Source	Power return and reference node; defines V_GS; carries full load current and diode conduction

Key Features

Feature	Design Value
Fast-recovery body diode	t_rr = 90 ns / Q_rr = 248 nC - Reduces switching loss and EMI in synchronous rectification and half-bridge freewheeling
Low gate charge	Q_g = 16.5 nC - Enables >100 kHz operation with standard gate drivers and minimizes drive-stage power loss
Zener-protected gate	V_(BR)GSO = ±30 V - Eliminates need for external gate clamp diodes in industrial noise environments
100% avalanche tested	E_AS = 250 mJ - Guarantees robustness against inductive energy spikes in motor drives and UPS systems
High dv/dt immunity	50 V/ns - Prevents false triggering in high-side configurations with fast-rising bus voltages

Applications

Industrial SMPS

Phase-Shift ZVS Converters

Use Scenario: Primary-side switch in 1–3 kW telecom and server power supplies operating at 100–300 kHz.

IC Role / Device Role / Timing Role: High-voltage switching element in full-bridge topology; handles 400–480 V DC bus with zero-voltage switching transitions.

Use Value: Low Q_rr and t_rr reduce dead-time loss and improve efficiency by ≥0.8% vs. standard 600 V MOSFETs.

Use Scenario: Lagging-leg switch in isolated DC-DC modules for datacenter PSUs requiring soft-switching.

IC Role / Device Role / Timing Role: Resonant switch enabling ZVS turn-on; leverages fast body diode for controlled commutation.

Use Value: 90 ns t_rr ensures clean current transfer during phase shift, minimizing voltage overshoot and snubber loss.

Motor Drive Inverters

UPS Output Stages

Use Scenario: Half-bridge output stage in 5–10 kW HVAC and pump inverters with 600 V DC link.

IC Role / Device Role / Timing Role: Upper/lower switch handling PWM-modulated motor currents; conducts body diode during freewheeling.

Use Value: 50 V/ns dv/dt ruggedness prevents shoot-through during high-slew-rate bus transients in regenerative braking.

Use Scenario: Inverter leg in online double-conversion UPS systems delivering clean 230 V AC output.

IC Role / Device Role / Timing Role: High-reliability power switch subjected to frequent overload and short-circuit events.

Use Value: 250 mJ single-pulse avalanche rating supports fault ride-through without desaturation shutdown or destruction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12N60DM2	12 A I_D, 330 mΩ R_DS(on) typ., same Q_g and t_rr	Higher current handling; marginally improved conduction loss at >8 A loads	Select when system peak current exceeds 10 A or thermal headroom is constrained
IPP60R190C7	650 V, 190 mΩ R_DS(on), 33 nC Q_g, no integrated Zener	Lower R_DS(on) but higher gate drive demand; requires external gate protection	Prefer for ultra-high-efficiency designs where gate drive capability and layout control allow added components

Compared with STP12N60DM2, this part trades 2 A current headroom for identical switching behavior and lower cost; versus IPP60R190C7, it sacrifices 230 mΩ on-resistance for guaranteed gate robustness and simpler drive design in harsh industrial settings.

Availability

STP11N60DM2 is available at Aetrix Electronics and suitable for industrial SMPS, phase-shift ZVS converters, and UPS output stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STP11N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, specializing in power, analog, MCU, and sensor technologies for industrial, automotive, and consumer markets.

This device belongs to the MDmesh™ DM2 high-voltage Power MOSFET product line, designed specifically for high-efficiency, high-frequency switched-mode power supplies and resonant converters demanding low Q_rr and rugged avalanche performance.

FAQ

Is STP11N60DM2 suitable for hard-switched PFC stages?

Yes - its 600 V V_(BR)DSS, 50 V/ns dv/dt ruggedness, and 100% avalanche testing make it viable for boost PFC up to 3 kW. However, its Q_rr (248 nC) is higher than dedicated PFC MOSFETs like STW48N60M2 (Q_rr = 110 nC), so efficiency may be 0.3–0.5% lower at 100 kHz.

What is the maximum safe operating area (SOA) at T_c = 100 °C?

At T_c = 100 °C, the continuous DC SOA is limited to 6.3 A at V_DS ≤ 10 V per Figure 1. For pulse operation (t_p = 100 µs), it supports 10 A up to 300 V; at t_p = 1 ms, the limit drops to ~4.5 A at 400 V due to thermal constraints and R_DS(on) derating.

Does the TO-220 tab require electrical isolation when mounted to a heatsink?

Yes - the metal tab is internally connected to the Drain terminal. Direct mounting to a grounded heatsink creates a short circuit unless insulated with a thermally conductive but electrically isolating pad or mica washer. Isolation voltage rating must exceed system's maximum V_DS (600 V).

Can STP11N60DM2 replace STP11NM60N in existing designs?

No - STP11NM60N uses older MDmesh™ M2 technology with higher Q_rr (520 nC) and slower t_rr (220 ns). While pin-compatible and same R_DS(on), substituting STP11N60DM2 improves efficiency and EMI but may require gate resistor re-tuning due to lower Q_g (16.5 nC vs. 27 nC) and faster switching edges.

STP11N60DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 420mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 614 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP11N60DM2 FAQ

1.How can I place an order for STP11N60DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP11N60DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP11N60DM2 reliable?

The price and inventory of STP11N60DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP11N60DM2 is usually 5 days.

3.What payment methods are accepted for STP11N60DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP11N60DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP11N60DM2?

STP11N60DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP11N60DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP11N60DM2?

For technical support, including STP11N60DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP11N60DM2 requirements.

6.How does Aetrix verify that STP11N60DM2 is sourced from the original manufacturer or authorized distributors?

All STP11N60DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP11N60DM2 meets industry standards.

7.What is the process for return or replacement of STP11N60DM2?

All STP11N60DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STP11N60DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP11N60DM2 part is unused and in its original packaging.

Return procedure for STP11N60DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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