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STMicroelectronics STP11NM50N
- Part No.:
- STP11NM50N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP11NM50N.pdf
- Description:
- MOSFET N-CH 500V 8.5A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:645
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Product details
Overview
STP11NM50N from STMicroelectronics is an N-channel 500 V, 8.5 A Power MOSFET in TO-220 package, featuring 0.40 Ω typ. RDS(on), 19 nC total gate charge, and 150 mJ single-pulse avalanche energy. It employs MDmesh™ II vertical strip architecture for high-efficiency switching in offline SMPS and PFC stages.
For engineers reviewing the STP11NM50N datasheet, STP11NM50N pinout, STP11NM50N application, or STP11NM50N equivalent, key selection criteria include breakdown voltage margin (500 V), thermal resistance (1.79 °C/W junction-to-case), diode recovery performance (230 ns trr), and gate drive compatibility with standard 10 V logic-level controllers.
Technical Context
This device uses ST's second-generation MDmesh™ II process, combining a vertical drift region with optimized strip layout to minimize both conduction loss (RDS(on)) and switching loss (Ciss = 547 pF, Qg = 19 nC). Its 150 °C max junction temperature and 1.79 °C/W Rthj-case support continuous operation at elevated ambient conditions when heatsinked.
The integrated body diode exhibits 1.5 V forward drop at 8.5 A and 230 ns reverse recovery time at 100 A/µs di/dt - enabling robust unclamped inductive switching in flyback and resonant topologies without external snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 500 V - supports 400 V AC mains-derived DC bus with 25% safety margin |
| RDS(on) typ. | 0.40 Ω @ VGS = 10 V - enables <1.5 W conduction loss at 8.5 A ID |
| Qg total | 19 nC - reduces gate driver power demand and switching transition time |
| EAS | 150 mJ - withstands single-pulse inductive energy without failure under SOA limits |
| trr | 230 ns @ Tj = 25 °C - minimizes commutation loss and EMI in hard-switched converters |
| Rthj-case | 1.79 °C/W - allows 39 W dissipation with 70 °C case-to-ambient delta (e.g., 25 °C ambient + 70 °C heatsink rise) |
Pinout & Package
TO-220 type A package: three-terminal through-hole housing with isolated tab (drain-connected), standardized mechanical dimensions per Table 9 of DocID17156 Rev 4, compatible with industry-standard heatsinks and mounting hardware.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / heat sink interface | Electrically connected to metal tab; requires insulating washer if mounted to grounded heatsink |
| Source | Reference node for gate drive and load return | Low-inductance connection point for current sensing and gate driver ground reference |
| Gate | Control terminal for channel modulation | High-impedance input requiring <5.8 Ω series resistance to damp ringing during fast switching |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees ruggedness against unclamped inductive transients up to 150 mJ per pulse |
| Low Ciss and Qg | 547 pF input capacitance and 19 nC gate charge enable >100 kHz operation with minimal driver loss |
| MDmesh™ II architecture | Vertical strip layout achieves 30% lower RDS(on) × Qg figure-of-merit vs. first-gen MDmesh |
| Low gate input resistance | 5.8 Ω intrinsic gate resistance suppresses parasitic oscillation without external damping |
Applications
| Server PSU Primary Switch | Industrial Motor Drive Half-Bridge |
|---|---|
Use Scenario: High-density 1 kW+ server power supply operating at 100–300 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Main switch handling full DC bus current (400 V) with synchronous rectification control timing. Use Value: 0.40 Ω RDS(on) and 230 ns trr reduce conduction and recovery losses by ~18% vs. legacy 600 V MOSFETs. | Use Scenario: 3-phase inverter stage in HVAC compressor drive, operating at 8–16 kHz PWM with regenerative braking. IC Role / Device Role / Timing Role: Upper-leg switching device in half-bridge leg, subject to shoot-through and dv/dt stress. Use Value: 15 V/ns dv/dt rating and 150 mJ EAS prevent false turn-on and avalanche failure during rapid bus transitions. |
| LED Streetlight Driver | Telecom Rectifier Module |
Use Scenario: Isolated flyback LED driver delivering 100 W at 42 V/2.4 A with universal AC input (90–305 VAC). IC Role / Device Role / Timing Role: Primary-side power switch managing peak currents up to 34 A pulsed during startup and overload. Use Value: 34 A pulsed ID rating and 1.5 V VSD support reliable soft-start and short-circuit protection without external current limiting. | Use Scenario: -48 V telecom rectifier front-end using phase-shifted full-bridge with ZVS. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier switch controlling output current flow timing relative to primary phase shift. Use Value: Low Qgd/Qg ratio (10/19 nC) improves ZVS window margin and reduces dead-time sensitivity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage Power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12NM50N | 500 V, 12 A, 0.33 Ω RDS(on), 24 nC Qg | Higher current rating but increased gate charge raises driver complexity | Select when >8.5 A continuous load current is required and gate drive capability supports 24 nC |
| FQP10N50C | 500 V, 10 A, 0.55 Ω RDS(on), 32 nC Qg, TO-220FP package | Higher RDS(on) and Qg degrade efficiency above 65 kHz; smaller footprint but no isolated tab | Choose only for cost-sensitive, low-frequency (<50 kHz), non-isolated heatsink designs |
Compared with STP12NM50N and FQP10N50C, STP11NM50N offers optimal balance of low RDS(on), moderate Qg, and proven avalanche ruggedness - making it preferred for mid-power, high-reliability 65–200 kHz SMPS where thermal margin and EMI control are critical.
Availability
STP11NM50N is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifiers, and LED streetlight drivers requiring stable component supply despite its obsolete status.
Supply support for STP11NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
The STP11NM50N belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline AC-DC converters and resonant topologies.
FAQ
Is STP11NM50N still in production?
No - STMicroelectronics discontinued STP11NM50N in November 2015 (DocID17156 Rev 4). However, Aetrix Electronics maintains legacy inventory with full traceability and provides extended lifecycle support including obsolescence forecasting and cross-reference guidance for active replacements.
What is the maximum safe operating temperature for STP11NM50N?
The absolute maximum junction temperature is 150 °C. Continuous operation requires maintaining Tj ≤ 150 °C via heatsinking - with Rthj-case = 1.79 °C/W, this allows up to 39 W dissipation at 70 °C case temperature. Derating is required above 25 °C ambient per Figure 3 in the datasheet.
Can STP11NM50N be used in synchronous rectification?
Yes - its low RDS(on) (0.40 Ω) and fast body diode (trr = 230 ns) support synchronous rectification in LLC and flyback topologies up to 200 kHz. Gate drive must be precisely timed to avoid shoot-through; typical implementation uses dedicated SR controller ICs like STSR3 or UCC24612.
Does STP11NM50N have lead-free and RoHS-compliant packaging?
Yes - ST manufactured STP11NM50N in ECOPACK®-compliant TO-220 packages meeting RoHS Directive 2011/65/EU. The device carries the "ECOPACK2" marking per ST's environmental compliance documentation, with lead-free terminations and halogen-free molding compound.
STP11NM50N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 470mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 547 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 70W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP11NM50N FAQ
1.How can I place an order for STP11NM50N through Aetrix?
Please submit a Request for Quotation (RFQ) for STP11NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP11NM50N reliable?
The price and inventory of STP11NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP11NM50N is usually 5 days.
3.What payment methods are accepted for STP11NM50N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP11NM50N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP11NM50N?
STP11NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP11NM50N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP11NM50N?
For technical support, including STP11NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP11NM50N requirements.
6.How does Aetrix verify that STP11NM50N is sourced from the original manufacturer or authorized distributors?
All STP11NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP11NM50N meets industry standards.
7.What is the process for return or replacement of STP11NM50N?
All STP11NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STP11NM50N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP11NM50N part is unused and in its original packaging.
Return procedure for STP11NM50N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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