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STMicroelectronics STP11NM60FP

Part No.:
STP11NM60FP
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixSTP11NM60FP.pdf
Description:
MOSFET N-CH 600V 11A TO220FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,288

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Product details

Overview

STP11NM60FP from STMicroelectronics is an N-channel 600 V, 11 A MDmesh™ Power MOSFET in TO-220FP package with RDS(on) = 0.4 Ω (typ), 100% avalanche tested, and 15 V/ns dv/dt capability-designed for high-voltage flyback and resonant converters in industrial SMPS.

For engineers reviewing the STP11NM60FP datasheet, STP11NM60FP pinout, STP11NM60FP application, or STP11NM60FP equivalent, key selection criteria include avalanche energy rating (350 mJ), gate charge (30 nC), thermal resistance (3.57 °C/W), and diode recovery performance (trr = 390 ns @ 25°C).

Technical Context

This MOSFET employs ST's MDmesh™ technology-combining Multiple Drain process and PowerMESH™ horizontal layout-to achieve low RDS(on) while maintaining high voltage ruggedness. Its 600 V VDSS, 150 °C Tj(max), and 100% unclamped inductive avalanche testing enable reliable operation under transient overvoltage conditions.

The device features low Ciss (1000 pF), Coss (230 pF), and Crss (25 pF) with a gate threshold voltage of 3–5 V and forward transconductance of 5.2 S-optimized for fast switching with reduced driver loss in hard-switched topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS600 V - supports primary-side switching in universal-input offline SMPS up to 400 V DC bus with margin.
RDS(on)0.4 Ω (typ) at VGS = 10 V - enables <1.2 W conduction loss at 11 A continuous drain current.
ID (TC = 25°C)11 A - rated for continuous operation with heatsink; derates to 7 A at 100°C case temperature.
EAS350 mJ - withstands single-pulse inductive energy without failure, critical for ZVS/ZCS soft-switching reliability.
Qg30 nC - determines gate drive power requirement; compatible with standard 1-A peak gate drivers.
trr390 ns (Tj = 25°C) - defines reverse recovery time during hard commutation; impacts switching loss and EMI in bridge legs.
Rthj-case3.57 °C/W - defines thermal path efficiency from junction to case; requires minimum 12 cm² 1 mm thick aluminum heatsink for full 11 A operation.

Pinout & Package

STP11NM60FP uses the TO-220FP (Full-Pak) package: insulated plastic body with internal isolation barrier, enabling direct mounting to heatsink without insulator kit. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control inputReceives 10 V logic-level signal; 1.6 Ω gate resistance minimizes oscillation risk with standard PCB trace routing.
2 (Drain)High-side switch nodeInternally bonded to metal tab-electrically connected to drain; must be isolated from heatsink unless using isolated mounting hardware.
3 (Source)Power return referenceServes as local ground reference for gate driver; low-inductance connection essential to suppress Miller-induced turn-on.

Key Features

FeatureDesign Value
MDmesh™ technologyEnables 0.4 Ω RDS(on) at 600 V-reducing conduction loss by ~35% vs. conventional planar MOSFETs in same package.
100% unclamped avalanche testedGuarantees robustness against inductive kickback in flyback transformers and PFC chokes without external snubbers.
Low Coss (230 pF) & Crss (25 pF)Minimizes capacitive switching loss and improves ZVS initiation in LLC resonant converters.
15 V/ns dv/dt immunityPrevents false turn-on during high-slew-rate voltage transients in half-bridge configurations.
TO-220FP insulation2500 V DC isolation between drain tab and leads-eliminates need for mica washers in compact heatsink designs.

Applications

Industrial SMPSLED Driver Power Stage

Use Scenario: 300–500 W open-frame AC/DC power supply for PLC controllers and motor drives.

IC Role / Device Role / Timing Role: Primary-side switching element in quasi-resonant flyback topology operating at 65–100 kHz.

Use Value: 350 mJ avalanche energy rating eliminates need for clamping circuits, reducing BOM count and improving reliability under line surge.

Use Scenario: Constant-current LED driver for high-bay lighting with universal AC input (85–265 VAC).

IC Role / Device Role / Timing Role: High-side switch in buck-boost PFC + isolated flyback architecture.

Use Value: Low Qg (30 nC) and fast trr (390 ns) reduce switching loss and audible noise in dimmable LED systems.

Telecom Rectifier ModuleEV Charger Auxiliary Supply

Use Scenario: 48 V telecom rectifier with active OR-ing and hold-up capacitor charging.

IC Role / Device Role / Timing Role: Synchronous rectifier control switch in secondary-side synchronous rectification stage.

Use Value: 0.4 Ω RDS(on) reduces conduction loss by >1.5 W vs. legacy 0.65 Ω devices, improving thermal margin at 55°C ambient.

Use Scenario: 12 V/5 A auxiliary power supply inside 7 kW on-board EV charger.

IC Role / Device Role / Timing Role: Main switch in isolated forward converter powering MCU, gate drivers, and sensors.

Use Value: TO-220FP insulation (2500 V) allows direct heatsink mounting without creepage/clearance compromises in compact automotive-grade enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP12NK60ZRDS(on) = 0.38 Ω (typ), higher Qg = 42 nC, same 600 V rating and TO-220FP package.Better conduction loss but higher gate drive loss; less suitable for high-frequency (>150 kHz) operation.Select when thermal budget is tighter than drive capability; verify gate driver can source/sink 1.5× more peak current.
FQP10N60CRDS(on) = 0.65 Ω (typ), lower EAS = 220 mJ, no avalanche test guarantee, TO-220 (non-isolated) package.Lacks 2500 V isolation and avalanche ruggedness; requires external insulator and snubber network.Acceptable only in cost-sensitive, non-safety-critical applications with controlled load profiles and derated voltage margin.

Compared with STP12NK60Z and FQP10N60C, STP11NM60FP delivers optimal balance of low RDS(on), guaranteed avalanche robustness, and integrated isolation-making it preferred for industrial and automotive auxiliary supplies where reliability and compact heatsinking are mandatory.

Availability

STP11NM60FP is available at Aetrix Electronics and suitable for industrial SMPS, LED driver power stages, and telecom rectifier modules requiring stable component supply across multi-year production cycles.

Supply support for STP11NM60FP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.

The MDmesh™ Power MOSFET product line was engineered specifically for high-efficiency, high-density switched-mode power conversion-targeting applications where voltage rating, ruggedness, and dynamic performance must coexist without compromise.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The STP11NM60FP supports 7 A continuous drain current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220FP package (Rthj-case = 3.57 °C/W) and ensures safe operation within the 150°C maximum junction temperature limit under sustained load.

Does STP11NM60FP require a gate resistor for stability?

Yes-a gate resistor (typically 10–47 Ω) is recommended to dampen parasitic oscillations caused by PCB trace inductance and gate capacitance interaction. The device's 1.6 Ω intrinsic gate resistance is insufficient alone; external resistance controls turn-on/turn-off speed and prevents shoot-through in bridge configurations.

Can STP11NM60FP replace STP11NM60 in existing designs?

Yes-STP11NM60FP is a direct drop-in replacement for STP11NM60 in TO-220FP footprint layouts. Both share identical electrical specs and pinout, but STP11NM60FP adds 2500 V DC insulation between drain tab and leads, enabling safer heatsink mounting without additional isolation hardware.

What is the significance of "100% avalanche tested" in production?

Every STP11NM60FP unit undergoes individual unclamped inductive avalanche stress testing at IAR = 5.5 A and EAS = 350 mJ. This ensures each device meets minimum ruggedness requirements before shipment-critical for applications subject to transformer leakage inductance spikes or load dump transients without snubber protection.

STP11NM60FP Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
MDmesh™
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1000 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
35W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FP

STP11NM60FP FAQ

1.How can I place an order for STP11NM60FP through Aetrix?

Please submit a Request for Quotation (RFQ) for STP11NM60FP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP11NM60FP reliable?

The price and inventory of STP11NM60FP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP11NM60FP is usually 5 days.

3.What payment methods are accepted for STP11NM60FP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP11NM60FP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP11NM60FP?

STP11NM60FP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP11NM60FP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP11NM60FP?

For technical support, including STP11NM60FP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP11NM60FP requirements.

6.How does Aetrix verify that STP11NM60FP is sourced from the original manufacturer or authorized distributors?

All STP11NM60FP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP11NM60FP meets industry standards.

7.What is the process for return or replacement of STP11NM60FP?

All STP11NM60FP units undergo pre-shipment inspection (PSI). If there is an issue with STP11NM60FP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP11NM60FP part is unused and in its original packaging.

Return procedure for STP11NM60FP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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