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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP11NM60N

Name: STP11NM60N
Brand: STMicroelectronics
SKU: STP11NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP11NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP11NM60N.pdf

Description:: MOSFET N-CH 600V 10A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP11NM60N from STMicroelectronics is an N-channel 600 V, 10 A, 0.37 Ω (typ) MDmesh™ II Power MOSFET in TO-220 package, designed for high-efficiency switching converters. It delivers low gate charge (31 nC), low input capacitance (850 pF), and 100% avalanche-tested ruggedness-enabling reliable operation in offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STP11NM60N datasheet, STP11NM60N pinout, STP11NM60N application, or STP11NM60N equivalent, key selection criteria include R_DS(on) at 10 V drive, safe operating area under inductive switching, thermal resistance (R_thj-case = 1.38 °C/W), and diode recovery performance (t_rr = 340 ns @ 25 °C).

Technical Context

This device employs ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its 600 V V_DSS, 0.37 Ω R_DS(on) (V_GS = 10 V, I_D = 5 A), and 31 nC total gate charge enable high-frequency operation up to 100 kHz in hard-switched topologies.

The integrated body diode exhibits 1.3 V forward voltage at 10 A and 340 ns reverse recovery time (T_J = 25 °C), supporting quasi-resonant and ZVS designs. Thermal design is enabled by low junction-to-case resistance (1.38 °C/W) and 90 W power dissipation capability at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands full mains rectified voltage in universal-input offline converters without derating.
R_DS(on) max	0.45 Ω - Ensures ≤4.5 W conduction loss at 10 A DC, critical for thermal management in sealed enclosures.
Q_g	31 nC - Enables fast turn-on with low gate driver power demand; compatible with standard 1-A peak drivers.
C_iss	850 pF - Low input capacitance reduces Miller effect, improving noise immunity and EMI behavior in high-dv/dt environments.
E_AS	200 mJ - Single-pulse avalanche energy rating supports robustness against inductive switching transients in relay/motor control.
t_r/t_f	18.5/12 ns - Fast switching transitions minimize overlap loss, enabling >90% efficiency in 65–100 kHz LLC resonant converters.
R_thj-case	1.38 °C/W - Allows direct mounting to heatsink without thermal interface pads in medium-power (<150 W) applications.

Pinout & Package

STP11NM60N is housed in a through-hole TO-220 package with 3 leads: Drain (tab), Source (pin 1), Gate (pin 2). The metal tab is electrically connected to the Drain and must be isolated from heatsink unless circuit topology permits common-drain configuration.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (left)	Source	Reference node for gate drive; connects to power ground in low-side switch configurations.
Pin 2 (center)	Gate	High-impedance control terminal requiring <31 nC charge for full enhancement; sensitive to ESD.
Pin 3 / Tab	Drain	Main high-voltage current path; electrically tied to metal tab-requires insulating washer when mounted to heatsink.

Key Features

Feature	Design Value
MDmesh™ II technology	Combines ultra-low R_DS(on) and Q_g via optimized vertical drift region and planar gate geometry-reducing both conduction and switching losses.
100% avalanche tested	Guarantees single-pulse ruggedness to 200 mJ at 25 °C, eliminating need for external snubbers in flyback or forward converter primary switches.
Low gate input resistance	3.7 Ω - Minimizes gate oscillation risk during high-speed switching; simplifies gate resistor selection for EMI control.
Enhanced diode recovery	t_rr = 340 ns, Q_rr = 3.26 µC - Reduces switching loss and voltage overshoot during commutation in bridge-leg and synchronous rectifier applications.
ECOPACK® compliant	Meets RoHS and halogen-free requirements without performance trade-off-suitable for consumer and industrial equipment with environmental compliance mandates.

Applications

AC-DC Adapter Primary Switch

Industrial PFC Boost Stage

Use Scenario: 65 W universal-input adapter with active clamp flyback topology operating at 65 kHz.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus and 10 A peak drain current.

Use Value: 0.37 Ω R_DS(on) and 31 nC Q_g reduce conduction + switching losses to <1.2 W, enabling compact heatsink-free design.

Use Scenario: 1 kW industrial AC-DC front-end using continuous conduction mode (CCM) boost PFC.

IC Role / Device Role / Timing Role: Main switching element in boost chopper stage, switching at 65 kHz with 10 A RMS current.

Use Value: 1.38 °C/W R_thj-case and 90 W P_TOT allow direct heatsink mounting with <45 °C temperature rise at full load.

Solar Microinverter DC-Link Switch

Motor Drive Half-Bridge Leg

Use Scenario: 300 W string-level microinverter with two-phase interleaved DC-AC inversion.

IC Role / Device Role / Timing Role: DC-link switch managing bidirectional 400 V bus current with 10 A peak.

Use Value: Avalanche-rated 200 mJ E_AS absorbs inductive energy during grid fault events, avoiding catastrophic failure without added clamping.

Use Scenario: 750 W BLDC motor drive using 6-step commutation at 20 kHz PWM frequency.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg controlling phase current up to 10 A RMS.

Use Value: 1.3 V V_SD and 340 ns t_rr minimize shoot-through risk and freewheeling loss during dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099C6	600 V, 0.099 Ω R_DS(on), 48 nC Q_g, TO-220 package - lower R_DS(on) but higher gate charge.	Better conduction loss at high DC current (>8 A), but slower switching and higher driver loss.	Select when thermal budget is dominated by conduction loss and switching frequency <50 kHz.
STW11NK60Z	600 V, 0.42 Ω R_DS(on), 28 nC Q_g, TO-247 package - slightly higher R_DS(on), lower Q_g, larger package.	Lower gate drive power and improved SOA at high T_J, but requires larger PCB footprint and heatsink interface.	Select when gate drive efficiency and ruggedness at elevated temperature (>125 °C) are prioritized over board space.

Compared with IPP60R099C6 and STW11NK60Z, STP11NM60N offers optimal balance of R_DS(on), Q_g, and thermal resistance in TO-220-making it ideal for cost-sensitive, medium-power SMPS where board space and driver simplicity are constraints.

Availability

STP11NM60N is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial PFC modules, solar microinverters, and BLDC motor drives requiring stable component supply across multi-year production cycles.

Supply support for STP11NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MCU, and sensor technologies for industrial, automotive, and consumer markets.

The STP11NM60N belongs to ST's MDmesh™ II high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power supplies operating at 65–100 kHz with universal AC input.

FAQ

Is STP11NM60N suitable for use in zero-voltage switching (ZVS) circuits?

Yes. Its low Q_gd/Q_gs ratio (15.9 nC / 4.2 nC ≈ 3.8) and fast t_r/t_f (18.5 ns / 12 ns) support clean ZVS transitions in LLC resonant converters. Measured dv/dt capability of 45 V/ns at V_DD = 400 V ensures reliable turn-off under soft-switching conditions without parasitic turn-on.

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current is 6.3 A at T_C = 100 °C, as specified in Table 2 (Absolute Maximum Ratings). This reflects thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperature-critical for designing heatsink size in enclosed environments.

Does STP11NM60N require a gate resistor for stability in hard-switched applications?

Yes. A 10–22 Ω non-inductive gate resistor is recommended to dampen ringing caused by gate loop inductance and C_iss. The device's low gate input resistance (3.7 Ω) makes it susceptible to oscillation without proper gate control-especially when driving inductive loads above 50 kHz.

Can STP11NM60N replace STP12NK60Z in existing designs?

No. Although both are 600 V TO-220 MOSFETs, STP12NK60Z has higher R_DS(on) (0.65 Ω), lower Q_g (25 nC), and different SOA limits. Substituting STP11NM60N would reduce conduction loss but increase gate drive demand and may exceed safe operating area during transient overload unless gate drive and layout are re-validated.

STP11NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 450mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 850 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP11NM60N FAQ

1.How can I place an order for STP11NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STP11NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP11NM60N reliable?

The price and inventory of STP11NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP11NM60N is usually 5 days.

3.What payment methods are accepted for STP11NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP11NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP11NM60N?

STP11NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP11NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP11NM60N?

For technical support, including STP11NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP11NM60N requirements.

6.How does Aetrix verify that STP11NM60N is sourced from the original manufacturer or authorized distributors?

All STP11NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP11NM60N meets industry standards.

7.What is the process for return or replacement of STP11NM60N?

All STP11NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STP11NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP11NM60N part is unused and in its original packaging.

Return procedure for STP11NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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