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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP11NM65N

Name: STP11NM65N
Brand: STMicroelectronics
SKU: STP11NM65N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP11NM65N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP11NM65N.pdf

Description:: MOSFET N-CH 650V 11A TO-220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP11NM65N from STMicroelectronics is an N-channel 650 V, 425 mΩ (typ), 11 A MDmesh™ II Power MOSFET in DPAK (TO-252) package, designed for high-efficiency switching converters. It delivers low gate charge (29 nC), low input capacitance (800 pF), and 100% avalanche-tested ruggedness - enabling reliable operation in PFC stages and SMPS primary-side switches.

For engineers reviewing the STP11NM65N datasheet, STP11NM65N pinout, STP11NM65N application, or STP11NM65N equivalent, key selection criteria include R_DS(on) stability over temperature, E_AS (147 mJ), dv/dt immunity (15 V/ns), and DPAK thermal resistance (R_thJC = 1.14 °C/W).

Technical Context

This device uses ST's second-generation MDmesh vertical strip architecture to minimize conduction and switching losses simultaneously. Its optimized cell layout achieves low R_DS(on) × Q_g figure-of-merit (12.4 Ω·nC), supporting >100 kHz hard-switched topologies.

The integrated body diode features fast reverse recovery (t_rr = 418 ns @ T_J = 25 °C) and low Q_rr (4.4 µC), reducing commutation loss in bridge configurations. Gate threshold voltage (2–4 V) ensures robust TTL/CMOS drive compatibility without spurious turn-on.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V AC input PFC and 380 V DC bus applications with 20% margin
R_DS(on) max	455 mΩ @ V_GS = 10 V, I_D = 5.5 A - defines conduction loss in continuous conduction mode
Q_g	29 nC - determines gate driver power requirement and switching speed control
E_AS	147 mJ - enables unclamped inductive switching without failure under defined test conditions
t_rr	418 ns - limits diode recovery loss during hard commutation in half-bridge circuits
R_thJC	1.14 °C/W - sets maximum power dissipation limit (110 W at T_C = 25 °C) with heatsink interface
I_D cont	11 A @ T_C = 25 °C - usable current rating under forced-air-cooled PCB mounting

Pinout & Package

DPAK (TO-252) package: surface-mount, single-die, thermally enhanced with exposed drain tab (Pin 2/TAB). Standard footprint per Figure 21 (DS5257 Rev 5, p.12), compatible with automated reflow assembly.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance MOSFET control terminal; requires <100 nA leakage drive; sensitive to ESD
2 (TAB/D)	Drain (exposed pad)	Main high-voltage power path; electrically connected to die backside; must be soldered to PCB copper pour for thermal and electrical integrity
3 (S)	Source	Reference node for gate drive and current sensing; ties to low-side switch node or ground return path

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse energy handling up to 147 mJ without parameter shift or failure
Low C_iss / C_oss	800 pF / 50 pF - reduces capacitive switching loss and improves light-load efficiency
MDmesh™ II architecture	Enables 425 mΩ R_DS(on) at 650 V - 30% lower on-resistance than first-gen MDmesh at same voltage class
Low gate input resistance	4.2 Ω intrinsic R_g - minimizes gate oscillation risk and simplifies RC snubber design
ECOPACK® compliant	Meets RoHS and halogen-free requirements per ST's environmental grade definitions

Applications

Industrial SMPS Primary Switch

Server PSU Active Clamp Flyback

Use Scenario: 1 kW telecom rectifier operating at 100 kHz with 380 V DC output.

IC Role / Device Role / Timing Role: High-side main switch in LLC resonant converter primary leg.

Use Value: Low Q_g (29 nC) and low C_oss (50 pF) reduce dead-time loss and improve ZVS initiation margin.

Use Scenario: 800 W server power supply using active clamp flyback topology with 400 V AC input.

IC Role / Device Role / Timing Role: Clamp switch synchronized to main MOSFET turn-off edge.

Use Value: 15 V/ns dv/dt immunity prevents false turn-on during high-slew transient events across transformer leakage inductance.

PFC Boost Stage

Solar Microinverter DC-DC Stage

Use Scenario: Continuous conduction mode (CCM) boost PFC front-end for industrial motor drives.

IC Role / Device Role / Timing Role: Unidirectional power switch carrying full line-frequency ripple current.

Use Value: 11 A continuous rating at T_C = 25 °C and 7 A at T_C = 100 °C enable compact heatsink sizing in enclosed enclosures.

Use Scenario: Isolated DC-DC stage in 300 W solar microinverter interfacing PV panel to 400 V DC link.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge configuration.

Use Value: Avalanche ruggedness (E_AS = 147 mJ) withstands voltage spikes from transformer leakage energy during soft-switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK60Z	R_DS(on) = 580 mΩ (max), Q_g = 35 nC, V_DS = 600 V - higher conduction loss, larger gate charge	Limited to ≤75 kHz operation due to higher switching loss; not rated for 650 V bus systems	Select only if cost sensitivity outweighs efficiency targets and system voltage remains ≤550 V DC.
IPW65R041CFD7	R_DS(on) = 41 mΩ (typ), Q_g = 63 nC, V_DS = 650 V - 10× lower R_DS(on), but 2.2× higher Q_g	Requires stronger gate driver (≥2 A peak); better suited for high-current, low-frequency (<50 kHz) applications	Prefer for high-power (>2 kW) designs where conduction loss dominates, but verify gate drive capability and layout parasitics.

Compared with STP12NK60Z, STP11NM65N offers superior voltage margin and lower switching loss; versus IPW65R041CFD7, it trades higher R_DS(on) for significantly reduced gate drive demand and simpler layout - ideal for space-constrained 1–1.5 kW converters.

Availability

STP11NM65N is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, PFC boost stages, and solar microinverter DC-DC stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STP11NM65N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MCU, and sensor technologies for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ II high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power conversion in demanding industrial and computing applications.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STP11NM65N supports 7 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 1 (Absolute Maximum Ratings). This derating reflects thermal limitations of the DPAK package and must be validated with actual board-level thermal design including copper area, airflow, and heatsink interface.

Does this MOSFET include an integrated body diode, and what are its key recovery characteristics?

Yes, STP11NM65N integrates a fast-recovery body diode with t_rr = 418 ns (T_J = 25 °C), Q_rr = 4.4 µC, and I_RRM = 21 A. These values are measured under standardized inductive load conditions (V_DD = 60 V, dI/dt = 100 A/µs) and directly impact commutation loss in bridge topologies.

Can STP11NM65N be used in avalanche mode during normal operation?

No - while 100% avalanche tested and rated for single-pulse E_AS = 147 mJ, ST specifies avalanche operation only for fault conditions. Continuous avalanche use is not characterized or guaranteed; design must avoid SOA violations via proper snubbing, clamping, and layout to prevent localized hot-spot formation.

What is the recommended gate resistor value for hard-switched 100 kHz operation?

For 100 kHz hard-switched operation with typical 12 V gate drive, a 4.7 Ω series gate resistor is validated in ST's test circuit (Figure 13) and yields td(on) = 15.5 ns, tr = 10.8 ns, td(off) = 11 ns, and tf = 47 ns. Lower values increase switching speed but risk ringing; higher values reduce EMI at the cost of increased switching loss.

STP11NM65N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 455mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 800 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP11NM65N FAQ

1.How can I place an order for STP11NM65N through Aetrix?

Please submit a Request for Quotation (RFQ) for STP11NM65N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP11NM65N reliable?

The price and inventory of STP11NM65N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP11NM65N is usually 5 days.

3.What payment methods are accepted for STP11NM65N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP11NM65N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP11NM65N?

STP11NM65N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP11NM65N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP11NM65N?

For technical support, including STP11NM65N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP11NM65N requirements.

6.How does Aetrix verify that STP11NM65N is sourced from the original manufacturer or authorized distributors?

All STP11NM65N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP11NM65N meets industry standards.

7.What is the process for return or replacement of STP11NM65N?

All STP11NM65N units undergo pre-shipment inspection (PSI). If there is an issue with STP11NM65N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP11NM65N part is unused and in its original packaging.

Return procedure for STP11NM65N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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