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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP11NM80

Name: STP11NM80
Brand: STMicroelectronics
SKU: STP11NM80
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP11NM80

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP11NM80.pdf

Description:: MOSFET N-CH 800V 11A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP11NM80 from STMicroelectronics is an N-channel 800 V, 380 mΩ typ. (400 mΩ max), 11 A MDmesh™ Power MOSFET in TO-220 package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives. It delivers 30 V/ns dv/dt capability, 400 mJ single-pulse avalanche energy, and low 50 nC total gate charge for efficient hard-switching operation.

For engineers reviewing the STP11NM80 datasheet, STP11NM80 pinout, STP11NM80 application, or STP11NM80 equivalent, this device is selected for high-reliability 800 V primary-side switching where avalanche ruggedness, low R_DS(on), and fast switching with minimal gate drive loss are critical design requirements.

Technical Context

This MOSFET employs ST's MDmesh™ technology-combining multiple drain process with PowerMESH™ horizontal layout-to achieve ultra-low on-resistance while maintaining high voltage blocking. Its 800 V V_DS rating and 30 V/ns dv/dt tolerance support robust operation under transient overvoltage conditions in unclamped inductive loads.

The device integrates a fast-recovery body diode (t_rr = 612 ns, Q_rr = 7.22 µC at T_J = 25 °C) and exhibits stable gate threshold (3–5 V) and on-resistance over temperature, enabling predictable control in high-temperature power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Enables direct use in 400 VAC mains-fed topologies without series stacking.
R_DS(on) max	400 mΩ - Limits conduction loss to ≤4.84 W at 11 A continuous, supporting thermally constrained designs.
I_D (T_C = 25 °C)	11 A - Sustains full-load current in TO-220 package with heatsink mounting.
E_AS	400 mJ - Withstands single-pulse inductive energy without failure, eliminating need for external snubbers in many flyback/PFC designs.
Q_g	50 nC - Reduces gate driver power demand and switching transition time, improving efficiency at 50–100 kHz operation.
t_r/t_f	17 ns / 15 ns - Enables fast turn-on/turn-off with minimal overlap loss, critical for ZVS/ZCS soft-switching compatibility.
C_iss	1630 pF - Low input capacitance eases gate drive design and improves high-frequency stability.

Pinout & Package

STP11NM80 uses the TO-220 package (Type A), with metal tab (drain) electrically connected to Pin 2. The package features isolated mounting hole, standard 3.75 mm screw diameter, and 13–14 mm lead length for PCB through-hole insertion.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires 10 V drive for full enhancement; 2.7 Ω gate input resistance minimizes oscillation risk.
Pin 2 (D / Tab)	Drain (Exposed Metal Tab)	Main high-voltage output node; electrically tied to case-requires isolation when mounted to heatsink.
Pin 3 (S)	Source	Power return and reference for gate drive; forms common node with body diode cathode.

Key Features

Feature	Design Value
MDmesh™ silicon architecture	Delivers 380 mΩ typ. R_DS(on) at 800 V-25% lower than conventional planar MOSFETs of same die size.
100% avalanche tested	Guarantees minimum 400 mJ E_AS per unit-enables reliable operation in unclamped inductive switching without derating.
Low Q_gd/Q_gs ratio	21 nC / 12 nC = 1.75-reduces Miller effect, improving noise immunity and enabling faster turn-off under high dv/dt.
Fast body diode recovery	t_rr = 612 ns, Q_rr = 7.22 µC-minimizes reverse recovery loss and associated EMI in bridge and synchronous rectifier configurations.
ECOPACK® compliant	Meets RoHS and halogen-free requirements-supports environmentally regulated industrial and consumer power supplies.

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: High-efficiency 3 kW AC-DC front-end with active PFC and LLC resonant converter.

IC Role / Device Role / Timing Role: Main switch in boost PFC stage operating at 70 kHz, handling 11 A RMS input current.

Use Value: 400 mJ avalanche rating absorbs line surge transients; low C_iss enables clean gate drive with 1 W driver IC.

Use Scenario: 80+ Titanium-certified 1.5 kW server power supply with universal AC input.

IC Role / Device Role / Timing Role: Primary-side switch in asymmetric half-bridge topology, switching at 100 kHz with 50% duty cycle.

Use Value: 30 V/ns dv/dt capability prevents false triggering during fast bus collapse; TO-220 mechanical robustness supports automated assembly.

Induction Heating Inverter

EV Onboard Charger (OBC) DC-DC Stage

Use Scenario: 2.5 kW resonant inverter driving 20 kHz induction coil with variable load coupling.

IC Role / Device Role / Timing Role: Half-bridge upper switch subjected to repetitive unclamped inductive turn-off stress.

Use Value: Guaranteed E_AS > 400 mJ eliminates need for external clamping circuits; low Q_g reduces gate driver thermal load.

Use Scenario: 3.3 kW bidirectional OBC DC-DC stage converting 400 V battery to 400 V grid, operating in DAB topology.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge phase-shifted control, requiring precise timing and low conduction loss.

Use Value: Stable R_DS(on) vs. temperature ensures consistent current sharing across paralleled devices; 150 W P_TOT supports forced-air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW11NM80	TO-247 package; R_thJC = 0.83 °C/W (vs. 3.6 °C/W for STP11NM80); same electrical specs.	Higher power density required; needs larger heatsink footprint but supports >150 W continuous dissipation.	Select when thermal budget is tight and board space allows TO-247 mounting.
FDPF11N80	800 V, 420 mΩ max, 11 A; higher R_DS(on), 55 nC Q_g, no guaranteed avalanche rating.	Cost-sensitive industrial SMPS where transient robustness is managed externally.	Choose only if system-level snubbing and layout controls fully mitigate avalanche risk.

Compared with STW11NM80, STP11NM80 trades thermal performance for lower cost and smaller footprint; versus FDPF11N80, it provides verified avalanche ruggedness and lower gate charge-critical for reliability in unclamped topologies.

Availability

STP11NM80 is available at Aetrix Electronics and suitable for industrial motor drives, server PSUs, induction heating inverters, and EV onboard charger DC-DC stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STP11NM80 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

STP11NM80 belongs to the MDmesh™ II family-designed specifically for high-efficiency, high-reliability 600–900 V power conversion in offline and industrial applications where ruggedness and low conduction loss are prioritized.

FAQ

Is STP11NM80 suitable for zero-voltage switching (ZVS) topologies?

Yes. With 1630 pF C_iss, 750 pF C_oss, and 30 pF C_rss, STP11NM80 exhibits favorable capacitive ratios for ZVS implementation in LLC and phase-shifted full-bridge converters. Its low Q_g (50 nC) and stable C_oss vs. V_DS enable predictable resonant tank behavior up to 300 kHz.

What is the maximum recommended gate resistor value for hard-switching at 100 kHz?

For 100 kHz hard-switching with 10 V gate drive, a 10 Ω series gate resistor is recommended to limit peak current to <1 A while maintaining t_on/t_off < 50 ns. Lower values (4.7–6.8 Ω) may be used with active gate drivers capable of ≥2 A sink/source to minimize switching loss.

Does STP11NM80 require a negative gate turn-off voltage?

No. STP11NM80 has a ±30 V V_GS rating and operates reliably with 0 V to +10 V gate drive. Negative turn-off (e.g., –5 V) is unnecessary for stability but may marginally improve noise immunity in high-dv/dt environments-no datasheet requirement exists.

Can STP11NM80 be paralleled for higher current handling?

Yes-its positive temperature coefficient of R_DS(on) ensures inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual 1–2 Ω gate resistors. Derate total current by 15% for thermal imbalance; maximum parallel count is four units with forced-air cooling.

STP11NM80 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 43.6 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1630 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP11NM80 FAQ

1.How can I place an order for STP11NM80 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP11NM80 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP11NM80 reliable?

The price and inventory of STP11NM80 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP11NM80 is usually 5 days.

3.What payment methods are accepted for STP11NM80?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP11NM80 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP11NM80?

STP11NM80 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP11NM80 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP11NM80?

For technical support, including STP11NM80 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP11NM80 requirements.

6.How does Aetrix verify that STP11NM80 is sourced from the original manufacturer or authorized distributors?

All STP11NM80 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP11NM80 meets industry standards.

7.What is the process for return or replacement of STP11NM80?

All STP11NM80 units undergo pre-shipment inspection (PSI). If there is an issue with STP11NM80, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP11NM80 part is unused and in its original packaging.

Return procedure for STP11NM80:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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