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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP120NH03L

Name: STP120NH03L
Brand: STMicroelectronics
SKU: STP120NH03L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP120NH03L

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP120NH03L.pdf

Description:: MOSFET N-CH 30V 60A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:4,997

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Product details

Overview

STP120NH03L from STMicroelectronics is an N-channel 30V power MOSFET in TO-220 package, optimized for high-current DC-DC synchronous buck converters. It delivers R_DS(on) ≤ 5.5 mΩ at V_GS = 10 V, 60 A continuous drain current (T_C = 25°C), and low gate charge (Q_g = 57 nC), enabling high-efficiency operation in server VRMs and telecom power supplies.

For engineers reviewing the STP120NH03L datasheet, STP120NH03L pinout, STP120NH03L application, or STP120NH03L equivalent, key selection criteria include its low conduction loss profile, third-quadrant gate charge (Q_gls = 55 nC) for synchronous rectification, avalanche ruggedness (E_AS = 700 mJ), and thermal resistance (R_thJC = 1.30 °C/W) critical for thermally constrained board layouts.

Technical Context

This MOSFET employs ST's STripFET™ II process to achieve industry-leading R_DS(on) × Q_g figure-of-merit. Its low threshold voltage (V_GS(th) = 1.0–3.0 V) enables direct drive from standard 5 V logic, while its optimized C_gd/C_gs ratio suppresses shoot-through risk in high-side switching configurations.

The device integrates a fast-recovery body diode with t_rr = 46 ns and Q_rr = 64 nC at I_SD = 60 A, supporting efficient low-side switching in synchronous topologies. Its SOA curve supports pulsed ID up to 240 A, and it is rated for junction temperatures up to 175°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input bus systems and 12 V output rails.
R_DS(on)	≤ 5.5 mΩ @ V_GS = 10 V - Enables <1.0 W conduction loss at 30 A, critical for >95% efficiency in high-current VRMs.
I_D (cont)	60 A @ T_C = 25°C - Sustains full-rated current under heatsink-cooled conditions typical in baseplate-mounted power stages.
Q_g	57 nC - Reduces gate drive power loss and allows use of lower-cost gate drivers in high-frequency (>500 kHz) designs.
E_AS	700 mJ - Withstands unclamped inductive switching events without failure, improving system robustness in transient-loaded converters.
t_rr	46 ns - Minimizes reverse recovery loss in the companion high-side switch during dead-time transitions.

Pinout & Package

STP120NH03L uses the standard TO-220 package (3-pin, vertical mounting, isolated tab). The drain is internally connected to the metal tab for low-inductance thermal and electrical path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal	Reference node for gate drive; connects to power ground or low-side switch node in synchronous buck.
2 (Gate)	Control input	High-impedance MOS gate requiring <57 nC charge for full enhancement; sensitive to ESD and ringing.
3 (Drain / Tab)	Power output / heat sink interface	Electrically tied to drain; must be electrically isolated from chassis unless system design permits common-drain configuration.

Key Features

Feature	Design Value
STripFET™ II technology	Enables ultra-low R_DS(on) × Q_g product (≈314 mΩ·nC), directly reducing combined conduction + switching losses.
Low Q_gls (55 nC)	Minimizes gate energy required during third-quadrant conduction, essential for low-loss synchronous rectification.
ECOPACK® compliance	Lead-free second-level interconnect and RoHS-compliant packaging, meeting industrial and telecom environmental mandates.
High dV/dt immunity	Rated for 4.5 V/ns (per datasheet test conditions), suppressing false turn-on in noisy high-speed switching environments.

Applications

Server Voltage Regulator Module (VRM)

Telecom DC-DC Brick

Use Scenario: High-density 48 V to 12 V intermediate bus conversion feeding multi-phase CPU/GPU VRMs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter, operating at 300–600 kHz with 30–60 A per phase.

Use Value: 5.5 mΩ R_DS(on) limits conduction loss to ≤0.5 W/phase at 40 A, enabling >96% peak efficiency without forced airflow.

Use Scenario: 48 V input telecom power supply delivering 3.3 V/50 A to line cards in NEBS-compliant equipment.

IC Role / Device Role / Timing Role: Primary low-side switch in interleaved dual-phase buck stage, handling 25 A per phase with tight thermal constraints.

Use Value: 1.30 °C/W R_thJC allows direct mounting to aluminum baseplate, maintaining T_J < 125°C at full load without heatsink fins.

Industrial Motor Drive Inverter Stage

Automotive 12 V DC-DC Converter

Use Scenario: Auxiliary 24 V to 5 V/3 A supply for PLC I/O modules in factory automation cabinets.

IC Role / Device Role / Timing Role: Low-side switch in compact non-isolated buck converter, operating at 250 kHz with minimal PCB area.

Use Value: TO-220 package enables manual assembly and rework; low Q_g permits drive from low-power MCU GPIO with external buffer.

Use Scenario: 12 V battery-fed buck converter powering ADAS camera ECU (5 V/2 A) in passenger vehicles.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in automotive-grade buck regulator, qualified per AEC-Q101 stress tests.

Use Value: 175°C max T_J rating supports operation in engine bay ambient up to 105°C with derated current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side synchronous rectifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404ZPBF	R_DS(on) = 4.7 mΩ (lower), Q_g = 131 nC (higher), TO-220 package	Higher gate drive loss reduces efficiency above 300 kHz; better for lower-frequency, higher-current legacy designs	Prefer when gate drive capability exceeds 2 A peak and switching frequency < 250 kHz.
STP110N3LLH6	R_DS(on) = 3.2 mΩ, Q_g = 72 nC, same TO-220, newer STripFET™ VI process	Lower R_DS(on) improves conduction loss but requires tighter layout due to higher dV/dt sensitivity	Choose for new designs targeting >97% efficiency at 500 kHz+ with optimized gate loop inductance.

Compared with IRF1404ZPBF, STP120NH03L trades 0.8 mΩ higher R_DS(on) for 74 nC lower Q_g, yielding net lower total loss above 350 kHz; versus STP110N3LLH6, it offers proven ruggedness and broader design margin at moderate frequencies, despite slightly higher on-resistance.

Availability

STP120NH03L is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC bricks, and industrial motor drive auxiliary supplies requiring stable component supply across extended production lifecycles.

Supply support for STP120NH03L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and industrial power systems.

FAQ

Is STP120NH03L suitable for high-side switching?

No - STP120NH03L is optimized as a low-side synchronous rectifier. Its gate threshold voltage (1.0–3.0 V) and lack of integrated level-shifting circuitry make it unsuitable for direct high-side drive in bootstrap configurations without external gate driver isolation. Use dedicated high-side N-channel drivers like ST's STDRIVE601 for such topologies.

What is the maximum safe operating frequency for STP120NH03L?

While not explicitly frequency-rated, STP120NH03L's 57 nC Q_g, 4100 pF C_iss, and 16 ns t_d(on) support reliable operation up to 1 MHz in well-designed layouts. Efficiency gains diminish above 600 kHz due to increased switching loss dominance; thermal validation at target frequency and load is mandatory.

Does STP120NH03L have avalanche rating?

Yes - it is fully rated for single-pulse avalanche energy E_AS = 700 mJ at T_J = 25°C (I_D = 30 A, V_DD < 30 V). This rating ensures survivability during unclamped inductive switching transients, such as those caused by PCB trace inductance or sudden load disconnection in DC-DC stages.

Can STP120NH03L be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (confirmed in Figure 10 of datasheet) enables inherent current sharing. For stable paralleling, match gate drive loop inductance, use individual gate resistors (≥5 Ω), and ensure symmetrical thermal mounting to avoid thermal runaway; derate total current by 15% for two devices.

STP120NH03L Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 77 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP120NH03L FAQ

1.How can I place an order for STP120NH03L through Aetrix?

Please submit a Request for Quotation (RFQ) for STP120NH03L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP120NH03L reliable?

The price and inventory of STP120NH03L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP120NH03L is usually 5 days.

3.What payment methods are accepted for STP120NH03L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP120NH03L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP120NH03L?

STP120NH03L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP120NH03L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP120NH03L?

For technical support, including STP120NH03L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP120NH03L requirements.

6.How does Aetrix verify that STP120NH03L is sourced from the original manufacturer or authorized distributors?

All STP120NH03L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP120NH03L meets industry standards.

7.What is the process for return or replacement of STP120NH03L?

All STP120NH03L units undergo pre-shipment inspection (PSI). If there is an issue with STP120NH03L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP120NH03L part is unused and in its original packaging.

Return procedure for STP120NH03L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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