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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP12N60M2

Name: STP12N60M2
Brand: STMicroelectronics
SKU: STP12N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP12N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP12N60M2.pdf

Description:: MOSFET N-CH 600V 9A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:9,647

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Product details

Overview

STP12N60M2 from STMicroelectronics is an N-channel 600 V, 9 A Power MOSFET in TO-220 package, fabricated with MDmesh M2 technology. It delivers 395 mΩ typical R_DS(on), 16 nC total gate charge, and 117 mJ single-pulse avalanche energy - enabling high-efficiency hard-switching in offline SMPS and PFC stages.

For engineers reviewing the STP12N60M2 datasheet, STP12N60M2 pinout, STP12N60M2 application, or STP12N60M2 equivalent, key selection criteria include its 50 V/ns MOSFET dv/dt ruggedness, 1.47 °C/W junction-to-case thermal resistance, Zener-protected gate, and 100% avalanche-tested reliability for industrial power converters.

Technical Context

This MOSFET employs a strip layout and optimized vertical structure to minimize conduction loss while maintaining low C_oss (29 pF typ.) and C_oss,eq (106 pF) across 0–480 V. Its 8.5 nC Q_gd and 2.3 nC Q_gs support fast, controllable turn-off with reduced voltage overshoot.

The device integrates a robust body diode with 284 ns t_rr at 25 °C and 404 ns at 150 °C, rated for 9 A continuous source-drain current and 36 A pulsed current. Its 15 V/ns diode recovery dv/dt rating ensures stable operation under fast-recovery inductive switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V AC input rectified systems with 50% safety margin for surge and ringing.
R_DS(on) max	450 mΩ - limits conduction loss to ≤36 W at 9 A, enabling thermally constrained TO-220 designs.
Q_g	16 nC - enables efficient gate drive with <1 W average power at 100 kHz using 12 V supply.
E_AS	117 mJ - withstands unclamped inductive switching events without failure in flyback or LLC resonant converters.
R_thJC	1.47 °C/W - allows 85 W dissipation with ≤125 °C junction rise above 25 °C case temperature.
t_r/t_f	9.2 ns / 18 ns - supports >500 kHz switching with minimal overlap loss in ZVS/ZCS topologies.

Pinout & Package

TO-220 type A package with isolated tab (drain-connected), standard 3-pin through-hole mounting, and ECOPACK®-compliant lead-free finish.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control terminal requiring ≤±25 V bias; 7 Ω intrinsic gate resistance shapes drive waveform fidelity.
2 (TAB)	Drain	Exposed metal tab electrically connected to drain; provides primary heat path and must be insulated from heatsink unless referenced to high-side potential.
3 (S)	Source	Power return node for load current; referenced to gate drive ground in low-side configurations; defines V_GS control loop reference.

Key Features

Feature	Design Value
Extremely low gate charge	16 nC total gate charge reduces driver power loss and EMI during high-frequency switching.
Optimized output capacitance profile	C_oss,eq = 106 pF over 0–480 V enables predictable soft-switching timing and reduced turn-off loss.
Very low turn-off switching losses	56 ns t_d(off) + 18 ns t_f minimizes energy dissipation during voltage-current overlap in hard-switched converters.
Zener-protected gate	Integrated gate oxide protection clamps transients up to ±25 V, eliminating need for external gate Zener in most layouts.
100% avalanche tested	Every unit validated for 2.6 A repetitive avalanche current and 117 mJ single-pulse energy per JEDEC JESD22-A109.

Applications

Industrial SMPS

Server PSU

Use Scenario: Primary-side switch in 500–1000 W active-clamp forward or LLC resonant converters.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus with 100–300 kHz switching frequency.

Use Value: 395 mΩ R_DS(on) and 16 nC Q_g reduce conduction and switching losses simultaneously, improving full-load efficiency by ≥0.8% vs. legacy 600 V MOSFETs.

Use Scenario: PFC boost switch in 80 PLUS Titanium-certified 1.5 kW server power supplies.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch operating at 65–130 kHz with 9 A RMS current.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during high-di/dt transitions, eliminating need for snubbers in compact board layouts.

Motor Drive Inverter

UPS Output Stage

Use Scenario: Half-bridge leg in 3-phase 7.5 kW HVAC inverter with IGBT replacement.

IC Role / Device Role / Timing Role: Low-side switching element in 16 kHz PWM-driven inverter with 100 µs dead-time.

Use Value: Body diode t_rr of 284 ns at 25 °C and 404 ns at 150 °C ensures clean commutation with minimal reverse recovery spikes.

Use Scenario: Output H-bridge switch in online double-conversion UPS delivering clean 230 V AC sine wave.

IC Role / Device Role / Timing Role: Hard-switched inverter switch operating at 10–20 kHz with bidirectional current capability.

Use Value: 100% avalanche testing guarantees survival during output short-circuit events and battery reversal transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099C7	650 V rating, 99 mΩ R_DS(on), 33 nC Q_g, TO-220FP package with isolated drain tab.	Lower R_DS(on) improves conduction loss but higher Q_g increases switching loss above 150 kHz.	Prefer for lower-power (<300 W), high-efficiency designs where thermal headroom permits larger heatsink.
FDPF12N60NZ	600 V rating, 480 mΩ R_DS(on), 22 nC Q_g, same TO-220 package, no avalanche rating specified.	Higher R_DS(on) increases conduction loss; lacks 100% avalanche test documentation per datasheet.	Acceptable for cost-sensitive, non-safety-critical applications where transient immunity is managed externally.

Compared with IPP60R099C7 and FDPF12N60NZ, STP12N60M2 offers the best balance of low Q_g, verified avalanche robustness, and proven thermal performance in TO-220 - making it optimal for industrial-grade 500–1000 W converters requiring long-term reliability.

Availability

STP12N60M2 is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, motor drive inverters, and UPS output stages requiring stable component supply and long-lifecycle support.

Supply support for STP12N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

ST's MDmesh™ M2 product line targets high-efficiency power conversion, combining low R_DS(on), low gate charge, and rugged avalanche performance for demanding offline and DC-DC applications.

FAQ

Is STP12N60M2 suitable for zero-voltage switching (ZVS) topologies?

Yes. With C_oss,eq = 106 pF over 0–480 V and low Q_gd/Q_gs ratio (3.7:1), STP12N60M2 enables predictable resonant tank timing in LLC and phase-shifted full-bridge converters. Its 1.47 °C/W R_thJC supports sustained ZVS operation at 200–300 kHz without thermal derating.

What is the maximum recommended gate resistor value for reliable turn-off?

A 10 Ω gate resistor is recommended for standard 12 V gate drivers to achieve controlled 56 ns t_d(off) and 18 ns t_f while limiting peak gate current to <1.2 A. Values >22 Ω increase switching loss and risk shoot-through in half-bridge configurations due to slower fall time.

Does the body diode require external snubbing in hard-switched PFC?

No. The body diode's 284 ns t_rr at 25 °C and 17 A I_RRM are fully characterized for CCM PFC operation. Its soft recovery profile and 15 V/ns diode dv/dt rating eliminate need for RC snubbers when paired with standard 100–200 nH boost inductors.

Can STP12N60M2 replace older STP12N60 in existing designs?

Yes - STP12N60M2 is a direct drop-in replacement for STP12N60 with identical pinout, package, and voltage rating. It improves R_DS(on) by 22% (450 → 395 mΩ typ.), reduces Q_g by 29% (22.5 → 16 nC), and adds 100% avalanche testing - yielding measurable efficiency and reliability gains without layout changes.

STP12N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 450mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 538 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 85W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP12N60M2 FAQ

1.How can I place an order for STP12N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP12N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP12N60M2 reliable?

The price and inventory of STP12N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP12N60M2 is usually 5 days.

3.What payment methods are accepted for STP12N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP12N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP12N60M2?

STP12N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP12N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP12N60M2?

For technical support, including STP12N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP12N60M2 requirements.

6.How does Aetrix verify that STP12N60M2 is sourced from the original manufacturer or authorized distributors?

All STP12N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP12N60M2 meets industry standards.

7.What is the process for return or replacement of STP12N60M2?

All STP12N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STP12N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP12N60M2 part is unused and in its original packaging.

Return procedure for STP12N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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