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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP12N65M5

Name: STP12N65M5
Brand: STMicroelectronics
SKU: STP12N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP12N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP12N65M5.pdf

Description:: MOSFET N-CH 650V 8.5A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP12N65M5 from STMicroelectronics is an N-channel 650 V, 390 mΩ typ. (430 mΩ max.), 8.5 A MDmesh M5 Power MOSFET in TO-220 package. It delivers low gate charge (20 nC), fast switching (tr(v) = 17.6 ns), and 100% avalanche-tested ruggedness for high-efficiency offline SMPS and PFC stages.

For engineers reviewing the STP12N65M5 datasheet, STP12N65M5 pinout, STP12N65M5 application, or STP12N65M5 equivalent, key selection criteria include R_DS(on) at 10 V drive, E_AS = 150 mJ, dv/dt immunity (15 V/ns), and thermal resistance (R_thJC = 1.79 °C/W) in high-power AC-DC converters.

Technical Context

This device uses ST's MDmesh M5 vertical superjunction process combined with PowerMESH horizontal layout to achieve ultra-low R_DS(on) × Q_g figure-of-merit (17.2 Ω·nC). Its optimized capacitance profile (C_iss = 900 pF, C_rss = 2 pF) enables clean hard-switching up to 100 kHz in continuous conduction mode PFC.

The integrated body diode features low V_SD = 1.5 V at 8.5 A and controlled reverse recovery (Q_rr = 2.2 µC, t_rr = 230 ns at 25 °C), reducing commutation losses and EMI in bridge-leg configurations without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands full mains rectified voltage (≈400 V DC) with ≥1.6× safety margin for surge and ringing in 230 VAC systems.
R_DS(on) max	430 mΩ @ V_GS = 10 V, I_D = 4.3 A - Enables <1.8 W conduction loss at 8.5 A, critical for thermally constrained TO-220 designs.
Q_g	20 nC - Reduces gate drive power and allows use of low-cost 1-A peak drivers in 65–100 kHz PFC controllers.
E_AS	150 mJ - Guarantees unclamped inductive switching survival in boost choke failure scenarios without external clamping.
t_rr	230 ns @ T_J = 25 °C - Limits diode reverse recovery tail current, minimizing shoot-through risk in synchronous rectification and half-bridge topologies.
R_thJC	1.79 °C/W - Supports 70 W continuous dissipation with standard heatsink, enabling compact 300–500 W industrial power supplies.

Pinout & Package

TO-220 package with isolated tab (no internal connection to drain); leads are bent for through-hole mounting. Tab serves as primary heat path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main high-side power terminal	Connected to TO-220 tab; electrically isolated from case but thermally coupled - requires insulating pad when mounted to grounded heatsink.
G (Gate)	Control input	High-impedance MOS gate requiring <20 nC charge; sensitive to ESD - must be protected by series resistor and TVS during PCB layout.
S (Source)	Power return and reference node	Low-inductance source path essential for stable switching; recommended to tie directly to power ground plane under device footprint.

Key Features

Feature	Design Value
Extremely low R_DS(on)	390 mΩ typical at 10 V drive - reduces conduction loss by >35% vs. legacy 650 V MOSFETs in 500 W PFC stages.
Low gate charge & C_rss	Q_g = 20 nC, C_rss = 2 pF - minimizes Miller-induced turn-on risk and enables faster dV/dt slew rates without false triggering.
100% avalanche tested	E_AS = 150 mJ - ensures robustness against overvoltage transients in unregulated bus applications without derating.
Optimized body diode	Q_rr = 2.2 µC, t_rr = 230 ns - lowers diode recovery loss and EMI generation in hard-switched totem-pole PFC designs.

Applications

Industrial AC-DC Power Supplies

Server & Telecom Rectifiers

Use Scenario: 400 W active clamp forward converter with universal input (90–264 VAC).

IC Role / Device Role: Primary-side high-side switch handling 650 V blocking and 8.5 A peak current.

Use Value: Low R_DS(on) and Q_g reduce total switching + conduction loss to <4.2 W, enabling >93% efficiency at full load without forced air.

Use Scenario: 3 kW front-end rectifier with interleaved PFC and LLC resonant stage.

IC Role / Device Role: Boost switch in 100 kHz CCM PFC module operating at 400 VDC bus.

Use Value: 150 mJ E_AS withstands line surges up to 4 kV, eliminating need for external avalanche clamps in EN 61000-4-5 compliant designs.

Motor Drive Inverters

Renewable Energy Converters

Use Scenario: 1.5 kW HVAC inverter with 3-phase IGBT/MOSFET hybrid topology.

IC Role / Device Role: Brake chopper switch dissipating regenerative energy into dump resistor.

Use Value: R_thJC = 1.79 °C/W allows 70 W continuous operation on 100 cm² heatsink, supporting 100% duty cycle braking without thermal shutdown.

Use Scenario: 800 V string inverter DC-DC stage converting PV array output to battery bus.

IC Role / Device Role: High-side switch in non-isolated buck-boost regulator handling 650 V transient spikes.

Use Value: V_ISO = 2.5 kV RMS isolation enables direct mounting to aluminum chassis without creepage/clearance barriers per IEC 62109.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP65R380C7	R_DS(on) = 380 mΩ, Q_g = 22 nC, TO-220 package, no avalanche rating specified	Lacks guaranteed E_AS testing - requires external clamping in unclamped inductive loads	Preferred where gate drive capability exceeds 1.2 A peak and system-level surge protection is already implemented.
IXTH12N65X2	R_DS(on) = 420 mΩ, Q_g = 17 nC, TO-247 package, E_AS = 220 mJ	Higher thermal performance (R_thJC = 0.55 °C/W) but larger footprint and cost	Chosen when >100 W continuous dissipation is required and board space permits TO-247 mounting.

Compared with IPP65R380C7 and IXTH12N65X2, STP12N65M5 uniquely balances TO-220 form factor, 150 mJ guaranteed avalanche energy, and 390 mΩ R_DS(on), making it optimal for cost-sensitive, space-constrained 300–600 W industrial power supplies requiring intrinsic ruggedness.

Availability

STP12N65M5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and renewable energy converters requiring stable component supply across multi-year production cycles.

Supply support for STP12N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog ICs for industrial, automotive, and consumer markets.

STP12N65M5 belongs to the MDmesh M5 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in 650 V applications such as PFC, SMPS, and motor drives.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current (I_D) at T_C = 100 °C is 5.4 A, as specified in Table 1 of DS6117 Rev 6. This rating is limited by junction temperature (T_J ≤ 150 °C) and accounts for reduced R_DS(on) derating at elevated temperatures. Operation above this current requires active cooling or pulse-width limitation.

Is the TO-220 tab internally connected to the drain terminal?

Yes - the metal tab of the STP12N65M5 TO-220 package is electrically connected to the drain (D) terminal, as confirmed by the pinout notation "D(2, TAB)" and mechanical drawings in Section 4.2 of DS6117. This requires electrical isolation (e.g., mica washer + thermal paste) when mounting to a grounded heatsink.

Does STP12N65M5 support gate drive voltages below 10 V?

Yes - the gate threshold voltage (V_GS(th)) is specified from 3 V to 5 V, and R_DS(on) remains usable down to V_GS = 8 V (390 mΩ typ. at 10 V, rising to ~520 mΩ at 8 V per Figure 8). However, full-rated 8.5 A current requires ≥10 V drive to ensure low on-resistance and thermal stability.

How does the body diode performance compare between STP12N65M5 and STF12N65M5?

Both share identical die characteristics - STF12N65M5 (TO-220FP) and STP12N65M5 (TO-220) use the same MDmesh M5 silicon. Their body diode parameters (V_SD = 1.5 V, Q_rr = 2.2 µC, t_rr = 230 ns at 25 °C) are identical per Tables 3 and 6. The only difference is thermal resistance: TO-220FP has higher R_thJC (5.00 °C/W), limiting its pulsed diode conduction capability relative to TO-220.

STP12N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 8.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 430mOhm @ 4.3A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 900 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP12N65M5 FAQ

1.How can I place an order for STP12N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP12N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP12N65M5 reliable?

The price and inventory of STP12N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP12N65M5 is usually 5 days.

3.What payment methods are accepted for STP12N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP12N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP12N65M5?

STP12N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP12N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP12N65M5?

For technical support, including STP12N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP12N65M5 requirements.

6.How does Aetrix verify that STP12N65M5 is sourced from the original manufacturer or authorized distributors?

All STP12N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP12N65M5 meets industry standards.

7.What is the process for return or replacement of STP12N65M5?

All STP12N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STP12N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP12N65M5 part is unused and in its original packaging.

Return procedure for STP12N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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