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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP12NK30Z

Name: STP12NK30Z
Brand: STMicroelectronics
SKU: STP12NK30Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP12NK30Z

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP12NK30Z.pdf

Description:: MOSFET N-CH 300V 9A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:1,490

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Product details

Overview

STP12NK30Z from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 300 V drain-source voltage, 400 mΩ maximum R_DS(on), and 9 A continuous drain current at T_C = 25 °C. It delivers high dv/dt capability (4.5 V/ns), 100% avalanche tested ruggedness (E_AS = 155 mJ), and gate charge minimized to 25–35 nC - deployed in offline SMPS primary-side switching.

For engineers reviewing the STP12NK30Z datasheet, STP12NK30Z pinout, STP12NK30Z application, or STP12NK30Z equivalent, key selection criteria include avalanche energy rating, Zener-protected gate robustness, TO-220 thermal resistance (R_thJC = 1.38 °C/W), and verified 36 A pulsed drain current handling under unclamped inductive load conditions.

Technical Context

This device implements ST's SuperMESH process - an optimized evolution of PowerMESH - delivering reduced on-resistance while preserving high-voltage integrity and fast switching dynamics. Its Zener-protected gate structure enables ±30 V V_GS tolerance and 3 kV HBM ESD immunity without external clamping.

The MOSFET supports hard-switched topologies with validated 165 ns reverse recovery time (t_rr) and 0.9 µC Q_rr at 150 °C junction temperature, enabling reliable operation in flyback and resonant converters where diode recovery stress is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	300 V - supports universal-input offline AC/DC converters up to 265 V_AC mains with margin.
R_DS(on) max	400 mΩ - limits conduction loss to ≤3.24 W at 9 A DC, enabling thermally constrained TO-220 designs.
I_D cont @ T_C=25°C	9 A - defines maximum continuous current before SOA derating; usable up to 5.6 A at 100 °C case temp.
E_AS	155 mJ - quantifies single-pulse avalanche energy absorption, critical for unclamped inductive turn-off reliability.
dv/dt capability	4.5 V/ns - ensures immunity to false triggering during high-slew-rate voltage transients in noisy power stages.
Q_g	25–35 nC - determines gate drive power requirement and switching speed trade-off in 50–500 kHz SMPS.
R_thJC	1.38 °C/W - enables direct heatsink mounting for ≥65 W dissipation before exceeding 150 °C junction limit.

Pinout & Package

STP12NK30Z is housed in a TO-220 type A package with isolated tab (drain-connected). The plastic body provides creepage/clearance compliant with IEC 60950-1 for reinforced insulation in AC/DC applications.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤10 V drive for full enhancement; Zener-protected against overvoltage.
2 (D, TAB)	Drain (exposed metal tab)	Main high-side power path; electrically connected to tab - must be insulated from heatsink unless referenced to same potential.
3 (S)	Source	Power return and reference node for gate drive; carries full load current and reverse diode conduction.

Key Features

Feature	Design Value
100% avalanche tested	Every unit validated for E_AS ≥155 mJ - eliminates field failure risk from transient overvoltage events.
Zener-protected gate	Integrated gate-body Zener clamps V_GS to ±30 V - removes need for external TVS in cost-sensitive designs.
SuperMESH technology	Optimized cell layout reduces R_DS(on) by ~20% vs legacy PowerMESH - improves efficiency without increasing die size.
High dv/dt immunity	4.5 V/ns rating confirmed under ISD ≤9 A, di/dt ≤300 A/μs - prevents spurious turn-on in high-noise PFC stages.

Applications

Offline AC/DC Adapters

Industrial Motor Drives

Use Scenario: 36 W–75 W universal-input flyback converter powering consumer electronics.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer.

Use Value: 155 mJ E_AS withstands reflected output overvoltage spikes during short-circuit events without failure.

Use Scenario: Half-bridge inverter stage driving 100–500 W BLDC motors in HVAC blowers.

IC Role / Device Role / Timing Role: Low-side switching element commutating phase current with fast fall time (10 ns).

Use Value: 4.5 V/ns dv/dt immunity prevents shoot-through during simultaneous high-side switching transitions.

LED Street Lighting Drivers

UPS Inverter Stages

Use Scenario: Constant-current buck-boost LED driver operating from 120–305 V_AC rectified input.

IC Role / Device Role / Timing Role: Main switching transistor regulating LED string current at 100–200 kHz.

Use Value: 360 mΩ typical R_DS(on) limits conduction loss to <1.2 W at 3.5 A, enabling passive cooling.

Use Scenario: 1 kVA line-interactive UPS with bidirectional DC-link switching.

IC Role / Device Role / Timing Role: High-reliability power switch in H-bridge inverter leg handling 120 V_DC bus.

Use Value: TO-220 package with 1.38 °C/W R_thJC sustains 9 A continuous current with ≤65 °C heatsink rise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK30Z	Lower ID (7.5 A), higher R_DS(on) (450 mΩ), same V_DS and package.	Suitable for ≤50 W adapters; reduced avalanche energy (120 mJ) limits surge robustness.	Select when lower cost and reduced power density are acceptable trade-offs.
FQP13N30	Same V_DS (300 V), higher R_DS(on) (480 mΩ), no Zener gate protection, different gate charge profile (Q_g = 42 nC).	Lacks integrated gate Zener - requires external clamping; slower switching due to higher Q_g.	Choose only if gate drive circuit already includes TVS and thermal margin exceeds 15 °C.

Compared with STP12NK30Z, STP10NK30Z offers lower current handling and reduced avalanche margin, while FQP13N30 sacrifices gate protection and increases drive loss - both require revalidation of SOA and ESD robustness in existing layouts.

Availability

STP12NK30Z is available at Aetrix Electronics and suitable for offline AC/DC adapters, industrial motor drives, LED street lighting drivers, and UPS inverter stages requiring stable component supply and long-term manufacturing continuity.

Supply support for STP12NK30Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The SuperMESH Power MOSFET product line targets high-efficiency, high-reliability switching applications in AC/DC, DC/DC, and motor control - emphasizing ruggedness, low conduction loss, and ease of gate drive integration.

FAQ

Is STP12NK30Z suitable for zero-voltage switching (ZVS) topologies?

Yes - its low C_oss (125 pF) and C_rss (28 pF), combined with 165 ns t_rr, enable efficient resonant turn-on in LLC and phase-shifted full-bridge converters. Verified operation up to 300 kHz with soft-switching waveforms documented in ST Application Note AN4107.

What is the maximum safe operating area (SOA) for repetitive pulse operation?

At T_C = 25 °C, STP12NK30Z supports 9 A at 300 V for 10 µs pulses (Figure 1, DS2996), with linear derating to 3.5 A at 300 V for 100 µs. Repetitive operation beyond these limits risks thermal runaway due to localized hot-spot formation in the die.

Does the Zener protection cover both positive and negative gate transients?

Yes - the integrated bidirectional Zener clamps V_GS between ±30 V, verified per IEC 61000-4-5 surge testing. This protects against both positive gate overvoltage (e.g., Miller-induced spikes) and negative transients (e.g., undershoot during fast turn-off).

Can STP12NK30Z replace STP12NK30L in existing designs?

No - STP12NK30L is a logic-level variant (V_GS(th) = 1–2.5 V) optimized for 5 V drive, whereas STP12NK30Z requires ≥10 V for full enhancement (V_GS(th) = 3–4.5 V). Substitution would cause incomplete turn-on and excessive conduction loss unless gate drive voltage is increased.

STP12NK30Z Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 300 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 670 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP12NK30Z FAQ

1.How can I place an order for STP12NK30Z through Aetrix?

Please submit a Request for Quotation (RFQ) for STP12NK30Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP12NK30Z reliable?

The price and inventory of STP12NK30Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP12NK30Z is usually 5 days.

3.What payment methods are accepted for STP12NK30Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP12NK30Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP12NK30Z?

STP12NK30Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP12NK30Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP12NK30Z?

For technical support, including STP12NK30Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP12NK30Z requirements.

6.How does Aetrix verify that STP12NK30Z is sourced from the original manufacturer or authorized distributors?

All STP12NK30Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP12NK30Z meets industry standards.

7.What is the process for return or replacement of STP12NK30Z?

All STP12NK30Z units undergo pre-shipment inspection (PSI). If there is an issue with STP12NK30Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP12NK30Z part is unused and in its original packaging.

Return procedure for STP12NK30Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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