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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP12NM50N

Name: STP12NM50N
Brand: STMicroelectronics
SKU: STP12NM50N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP12NM50N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP12NM50N.pdf

Description:: MOSFET N-CH 500V 11A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:3,667

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Product details

Overview

STP12NM50N from STMicroelectronics is an N-channel 500 V, 0.29 Ω (typ), 11 A MDmesh™ II Power MOSFET in TO-220 package, designed for high-efficiency switching power supplies and SMPS primary-side switching. It features 100% avalanche tested ruggedness, low gate charge (30 nC), and low input capacitance (940 pF) to minimize switching losses in hard-switched converters.

For engineers reviewing the STP12NM50N datasheet, STP12NM50N pinout, STP12NM50N application, or STP12NM50N equivalent, this device is selected for high-voltage DC-DC converters, offline flyback and forward SMPS, and industrial AC-DC power supplies where low R_DS(on), fast switching, and robust unclamped inductive switching capability are critical.

Technical Context

The STP12NM50N employs ST's second-generation MDmesh™ vertical structure with strip layout, delivering ultra-low on-resistance and gate charge simultaneously. Its 500 V V_DSS rating and 150 °C max junction temperature support operation in high-input-voltage industrial and telecom power systems.

It integrates a fast-recovery source-drain diode (t_rr = 340 ns at T_j = 25 °C) with low reverse recovery charge (Q_rr = 3.5 µC), enabling reliable operation in quasi-resonant and discontinuous conduction mode topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - Withstands up to 500 V drain-source blocking voltage, suitable for 400 V DC bus applications with margin.
R_DS(on) max	0.38 Ω - Ensures low conduction loss at 11 A continuous drain current (T_C = 25 °C).
Q_g	30 nC - Enables efficient gate drive with minimal driver power and reduced switching transition time.
t_r/t_f	15/14 ns - Fast rise/fall times support high-frequency operation up to 200 kHz in hard-switched topologies.
E_AS	350 mJ - Single-pulse avalanche energy rating allows safe operation under unclamped inductive load conditions.
R_thj-case	1.25 °C/W - Low thermal resistance enables 100 W dissipation with moderate heatsinking in TO-220 package.
I_D (T_C = 100 °C)	6.7 A - Continuous current derating ensures stable operation in enclosed or high-ambient environments.

Pinout & Package

STP12NM50N is housed in a through-hole TO-220 package with isolated tab (pin 2 connected to drain). The package provides mechanical robustness, standardized mounting, and direct heatsink interface via the metal tab.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for drain current	Low-impedance connection to system ground or low-side reference; carries full load current.
2 (Drain)	Main high-voltage power terminal	Connected to heat sink and high-voltage rail; electrically isolated from case per insulation test (2500 V RMS).
3 (Gate)	Control input for channel conduction	High-impedance MOSFET control node requiring <±25 V rating; sensitive to ESD and ringing.

Key Features

Feature	Design Value
MDmesh™ II technology	Combines ultra-low R_DS(on) and Q_g for optimal figure-of-merit (R_DS(on) × Q_g) in 500 V class.
100% avalanche tested	Guarantees single-pulse ruggedness to 350 mJ without parameter shift or failure.
Low C_iss/C_oss	940 pF / 100 pF enables clean turn-on/turn-off waveforms and reduces EMI generation.
Fast diode recovery	340 ns t_rr and 3.5 µC Q_rr reduce switching loss and voltage overshoot during freewheeling.
ECOPACK® compliant	Lead-free second-level interconnect meets RoHS and JEDEC JESD97 environmental standards.

Applications

Industrial AC-DC Power Supplies

Telecom DC-DC Converters

Use Scenario: Primary-side switch in 300–500 W offline flyback and forward converters powering industrial PLCs and motor drives.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from rectified AC line to transformer primary.

Use Value: 0.29 Ω R_DS(on) minimizes conduction loss at 11 A peak, while 30 nC Q_g supports 100–200 kHz switching without excessive gate drive loss.

Use Scenario: Main switch in 48 V input, 12 V output isolated DC-DC modules for telecom base stations and datacom equipment.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in secondary-side or primary-side hard-switched topology.

Use Value: 500 V rating accommodates transient surges on 48 V bus; low C_oss (100 pF) improves light-load efficiency and ZVS capability.

LED Driver Power Stages

UPS Inverter Stages

Use Scenario: High-voltage buck or SEPIC switch in constant-current LED drivers for street lighting and high-bay fixtures.

IC Role / Device Role / Timing Role: Regulating switch modulating average current through high-power LED strings.

Use Value: Avalanche ruggedness (350 mJ) tolerates inductive kickback from long LED string wiring; 150 °C T_jmax ensures reliability in thermally constrained enclosures.

Use Scenario: Half-bridge switch in online UPS inverters converting 360–400 V DC bus to 230 V AC output.

IC Role / Device Role / Timing Role: High-side or low-side switching element in H-bridge output stage.

Use Value: 6.7 A continuous current at 100 °C case temperature supports sustained 1 kVA output; TO-220 package enables direct bolt-down heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK50ZFP	500 V, 0.55 Ω R_DS(on), 10 A, TO-220FP package (isolated tab)	Higher R_DS(on) and lower current rating; FP variant offers insulated mounting but higher R_thj-case (5 °C/W)	Select when electrical isolation from heatsink is mandatory and lower power density is acceptable.
FQP10N50C	500 V, 0.58 Ω R_DS(on), 10 A, TO-220, no avalanche rating specified	No guaranteed avalanche energy; higher conduction loss; lower gate charge (25 nC) but inferior FOM	Select only for cost-sensitive, non-ruggedized designs where unclamped inductive stress is absent.

Compared with STP10NK50ZFP and FQP10N50C, the STP12NM50N delivers superior conduction efficiency (0.29 Ω vs ≥0.55 Ω), verified avalanche ruggedness (350 mJ), and optimized switching performance (30 nC Q_g, 940 pF C_iss), making it preferred for high-reliability, high-efficiency SMPS designs.

Availability

STP12NM50N is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom DC-DC converters, and UPS inverter stages requiring stable component supply and long-term design continuity.

Supply support for STP12NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors.

The STP12NM50N belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching power conversion in industrial, telecom, and consumer power supplies.

FAQ

What is the maximum continuous drain current for STP12NM50N at 100 °C case temperature?

The STP12NM50N supports 6.7 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the TO-220 package and ensures safe operation without exceeding 150 °C maximum junction temperature under typical heatsink conditions.

Does STP12NM50N have a built-in body diode, and what are its key recovery characteristics?

Yes, STP12NM50N includes an integral source-drain body diode rated for 11 A continuous and 44 A pulsed current. Its reverse recovery time is 340 ns at T_j = 25 °C, with Q_rr = 3.5 µC and I_RRM = 20 A, enabling reliable operation in discontinuous-mode flyback and resonant converters without external diode supplementation.

Is STP12NM50N pin-compatible with other devices in the STPxxNM50x family?

No - STP12NM50N uses a standard TO-220 three-pin configuration (G-D-S), but it is not pin-compatible with STB12NM50N (D²PAK), STD12NM50N (DPAK), STI12NM50N (I²PAK), or STF12NM50N (TO-220FP), which differ in package outline, thermal pad layout, and mounting orientation despite identical electrical specs.

What is the gate threshold voltage range, and how does it affect drive circuit design?

The gate threshold voltage (V_GS(th)) is specified from 2 V to 4 V at I_D = 250 µA. This relatively wide range means gate drive must provide ≥10 V to ensure full enhancement and low R_DS(on); designs should avoid marginal 5 V logic-level drive and include noise immunity (e.g., gate resistors, negative turn-off bias) to prevent spurious conduction.

STP12NM50N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 940 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP12NM50N FAQ

1.How can I place an order for STP12NM50N through Aetrix?

Please submit a Request for Quotation (RFQ) for STP12NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP12NM50N reliable?

The price and inventory of STP12NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP12NM50N is usually 5 days.

3.What payment methods are accepted for STP12NM50N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP12NM50N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP12NM50N?

STP12NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP12NM50N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP12NM50N?

For technical support, including STP12NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP12NM50N requirements.

6.How does Aetrix verify that STP12NM50N is sourced from the original manufacturer or authorized distributors?

All STP12NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP12NM50N meets industry standards.

7.What is the process for return or replacement of STP12NM50N?

All STP12NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STP12NM50N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP12NM50N part is unused and in its original packaging.

Return procedure for STP12NM50N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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