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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP12NM60N

Name: STP12NM60N
Brand: STMicroelectronics
SKU: STP12NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP12NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP12NM60N.pdf

Description:: MOSFET N-CH 600V 10A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:2,375

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Product details

Overview

STP12NM60N from STMicroelectronics is an N-channel 600 V, 10 A, 0.35 Ω (typ.) high-voltage Power MOSFET in TO-220 package, implementing second-generation MDmesh™ technology for ultra-low R_DS(on) and gate charge. It serves as a primary switching device in offline SMPS, PFC stages, and industrial AC-DC converters operating up to 150 °C junction temperature.

For engineers reviewing the STP12NM60N datasheet, STP12NM60N pinout, STP12NM60N application, or STP12NM60N equivalent, key selection criteria include its 600 V V_DSS, 0.35 Ω R_DS(on) at V_GS = 10 V, 30.5 nC total gate charge, 100% avalanche-rated ruggedness, and TO-220 thermal resistance of 5 °C/W.

Technical Context

This MOSFET uses ST's proprietary vertical MDmesh™ structure combined with strip layout to minimize conduction and switching losses simultaneously. Its low C_iss (960 pF) and C_rss (7 pF) enable fast, efficient hard-switching in high-frequency topologies.

The device features a robust body diode with 360 ns reverse recovery time (T_j = 25 °C), 1.3 V forward voltage at 10 A, and is 100% tested for unclamped inductive switching (UIS) up to 200 mJ, supporting reliable operation in flyback and resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands full mains-referenced DC bus voltages in 400 V AC input systems with margin.
R_DS(on)	0.35 Ω (typ.) at V_GS = 10 V - Enables <1.8 W conduction loss at 10 A continuous drain current.
Q_g	30.5 nC - Low gate drive power requirement supports efficient 100–300 kHz switching with standard gate drivers.
E_AS	200 mJ - Confirmed single-pulse avalanche energy rating ensures reliability during transient overvoltage events.
R_thj-case	5 °C/W - Enables 90 W dissipation at T_C = 25 °C; practical thermal design requires heatsink for >15 W continuous operation.
t_r/t_f	9 ns / 10 ns - Fast switching transitions reduce overlap loss and EMI generation in hard-switched topologies.

Pinout & Package

STP12NM60N is housed in a through-hole TO-220 package with three leads: Gate (pin 1), Drain (pin 2), Source (pin 3). The metal tab (Drain-connected) provides mechanical mounting and thermal path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control terminal; requires 10 V for full enhancement; 5 Ω gate input resistance minimizes oscillation risk.
2 (D)	Drain	Main high-side power terminal; electrically connected to metal tab; must be isolated from heatsink unless referenced to same potential.
3 (S)	Source	Power return node and reference for gate drive; forms common source configuration with gate driver ground.

Key Features

Feature	Design Value
Second-generation MDmesh™ structure	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for reduced conduction + switching loss trade-off.
100% UIS-tested avalanche capability	Guarantees robustness against inductive kickback without external snubbers in flyback or LLC primary switches.
Low C_rss (7 pF)	Minimizes Miller-induced turn-on risk and improves dv/dt immunity in high-side configurations.
ECOPACK® lead-free construction	Complies with RoHS and JEDEC JESD97 standards; suitable for automated through-hole assembly and reflow-compatible soldering.

Applications

Server PSU Primary Switch

Industrial Motor Drive Inverter

Use Scenario: High-efficiency 1 kW server power supply operating from 90–264 V AC input with active PFC and LLC resonant DC-DC stage.

IC Role / Device Role / Timing Role: Main switch in boost PFC pre-regulator and primary-side switch in LLC half-bridge transformer driver.

Use Value: 0.35 Ω R_DS(on) and 30.5 nC Q_g reduce conduction and gate drive losses, enabling >95% efficiency at full load.

Use Scenario: 3-phase inverter driving 0.75 kW induction motor in HVAC blower system with 400 V DC bus.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 6–20 kHz PWM inverter leg; used in hard-switched topology with freewheeling diode commutation.

Use Value: 200 mJ E_AS and 360 ns t_rr ensure reliable diode recovery and withstand short-circuit transients during motor stall.

Solar Microinverter DC-DC Stage

EV Onboard Charger Boost Stage

Use Scenario: 300–450 V DC-DC converter in string-level solar microinverter interfacing PV panels to 400 V DC link.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost converter operating at 150 kHz with synchronous rectification.

Use Value: Low C_iss (960 pF) and fast t_r/t_f (9/10 ns) enable clean zero-voltage switching transition control and reduced EMI filtering burden.

Use Scenario: Bidirectional AC-DC boost converter in 6.6 kW EV onboard charger handling 230 V AC input and 400 V battery charging.

IC Role / Device Role / Timing Role: Unidirectional boost switch in PFC front-end; operates in continuous conduction mode (CCM) at 65 kHz.

Use Value: 600 V V_DSS and 150 °C T_jmax support operation across wide input voltage range and ambient temperatures up to 85 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK60Z	600 V, 10 A, 0.65 Ω R_DS(on), Zener-protected gate, higher Q_g (42 nC)	Lower switching speed; better gate robustness but higher conduction loss	Preferred where gate ESD immunity is critical and efficiency is secondary to ruggedness.
FQP10N60C	600 V, 10 A, 0.75 Ω R_DS(on), no avalanche rating, TO-220 package	No UIS testing; lower cost but unsuitable for inductive switching without snubber	Acceptable only in resistive or low-dI/dt switching applications with strict BOM cost targets.

Compared with STP10NK60Z and FQP10N60C, STP12NM60N delivers superior efficiency via lower R_DS(on) and Q_g, while its 100% avalanche rating enables snubberless design in demanding inductive loads-making it optimal for high-reliability industrial and renewable energy converters.

Availability

STP12NM60N is available at Aetrix Electronics and suitable for server PSUs, industrial motor drives, solar microinverters, and EV onboard chargers requiring stable component supply and long-term industrial lifecycle support.

Supply support for STP12NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

STP12NM60N belongs to the MDmesh™ high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline switching applications including PFC, resonant converters, and motor control inverters.

FAQ

What is the maximum continuous drain current for STP12NM60N at 100 °C case temperature?

The maximum continuous drain current is 6.3 A at T_C = 100 °C, as specified in Table 1 of the datasheet. This derating reflects thermal limits imposed by the TO-220 package's 5 °C/W junction-to-case resistance and safe operating area constraints under sustained conduction.

Does STP12NM60N have integrated gate protection?

No, STP12NM60N does not include integrated gate Zener protection. Its gate-source voltage rating is ±25 V, and external gate clamping (e.g., 15 V TVS) is recommended when driving with non-isolated controllers or in noisy environments to prevent gate oxide damage.

Can STP12NM60N be used in synchronous rectification topologies?

No-it is an N-channel MOSFET optimized for high-side switching, not low-side synchronous rectification. Its body diode recovery characteristics (t_rr = 360 ns) and lack of optimized reverse conduction specs make it unsuitable as a synchronous rectifier; dedicated SR controllers and logic-level FETs are required instead.

Is STP12NM60N suitable for use in automotive applications?

STP12NM60N is not qualified to AEC-Q101 and is not rated for automotive use. ST explicitly states in the datasheet that non-automotive-grade products carry no warranty for life-sustaining, safety-critical, or vehicle propulsion applications-designers must select AEC-Q101-compliant alternatives like STW45NM60ND for such use cases.

STP12NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 410mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 960 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP12NM60N FAQ

1.How can I place an order for STP12NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STP12NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP12NM60N reliable?

The price and inventory of STP12NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP12NM60N is usually 5 days.

3.What payment methods are accepted for STP12NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP12NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP12NM60N?

STP12NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP12NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP12NM60N?

For technical support, including STP12NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP12NM60N requirements.

6.How does Aetrix verify that STP12NM60N is sourced from the original manufacturer or authorized distributors?

All STP12NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP12NM60N meets industry standards.

7.What is the process for return or replacement of STP12NM60N?

All STP12NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STP12NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP12NM60N part is unused and in its original packaging.

Return procedure for STP12NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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