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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP12PF06

Name: STP12PF06
Brand: STMicroelectronics
SKU: STP12PF06
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP12PF06

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP12PF06.pdf

Description:: MOSFET P-CH 60V 12A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:9,954

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Product details

Overview

STP12PF06 from STMicroelectronics is a P-channel enhancement-mode power MOSFET in TO-220 package, rated for 60 V drain-source voltage, 12 A continuous drain current at 25°C, and 0.18 Ω typical R_DS(on). It features 100% avalanche tested ruggedness, low gate charge (16 nC), and exceptional dv/dt capability (6 V/ns), enabling reliable operation in motor control and DC-DC converter high-side switching.

For engineers reviewing the STP12PF06 datasheet, STP12PF06 pinout, STP12PF06 application, or STP12PF06 equivalent, key selection criteria include verified P-channel polarity, TO-220 thermal resistance (2.5 °C/W junction-to-case), avalanche energy rating (200 mJ), and diode recovery performance (trr = 100 ns, Qrr = 260 nC) under inductive load conditions.

Technical Context

This device uses ST's STripFET™ II "Single Feature Size™" strip-based process to achieve high cell density and low on-resistance while maintaining robust unclamped inductive switching capability. Its P-channel topology enables high-side switch configuration without level-shifting circuitry in buck converters and H-bridge drivers.

The MOSFET exhibits gate threshold voltage of 2–4 V (V_GS(th)), forward transconductance of 2.5–6 S, and reverse transfer capacitance (C_rss) of 75 pF - parameters critical for predicting switching speed and EMI behavior in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; defines usable input range in 48 V systems.
R_DS(on)	0.18 Ω (typ) at V_GS = −10 V, I_D = 10 A - Directly determines conduction loss (P_cond ≈ I² × 0.18) in high-current paths.
I_D (cont)	12 A at T_C = 25°C - Continuous current rating with heatsink; derates to 8.4 A at 100°C case temperature.
E_AS	200 mJ - Single-pulse avalanche energy; supports safe operation during inductive turn-off transients without external snubbers.
Q_g	16 nC - Total gate charge; sets driver strength requirement and influences switching time (e.g., t_d(on) = 20 ns with R_G = 4.7 Ω).
dv/dt	6 V/ns - Peak diode recovery voltage slope tolerance; prevents spurious turn-on during fast commutation.
trr	100 ns - Reverse recovery time of integrated body diode; impacts efficiency and EMI in synchronous rectification or freewheeling paths.

Pinout & Package

STP12PF06 is housed in a standard TO-220 package with three leads: Gate (G), Drain (D), and Source (S). The metal tab is electrically connected to the Drain terminal and must be isolated from heatsink unless system grounding permits.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate (G)	Control electrode; requires −10 V to fully enhance; sensitive to ESD; driven via gate resistor to limit dI/dt.
2 (Middle)	Drain (D)	Main current path output; connected to metal tab; must be electrically isolated from heatsink unless referenced to same potential.
3 (Right)	Source (S)	Reference node for gate drive; tied to load return or high-side rail; carries full load current in P-channel high-side configuration.

Key Features

Feature	Design Value
100% Avalanche Tested	Guarantees robustness against inductive energy spikes up to 200 mJ without parameter shift or failure.
Low R_DS(on)	0.18 Ω typ reduces conduction losses by >30% vs. comparable 60 V P-MOSFETs, improving thermal margin in compact designs.
Low Gate Charge	16 nC total charge enables faster switching with lower driver power consumption and reduced gate drive losses.
High dv/dt Immunity	6 V/ns rating prevents false turn-on during rapid voltage transitions, eliminating need for negative gate bias in noisy environments.
STripFET™ II Process	Delivers superior cell density and reproducibility, resulting in tighter R_DS(on) distribution (±10%) across production lots.

Applications

Motor Control

DC-DC Converters

Use Scenario: High-side switch in brushed DC motor H-bridge for industrial actuators operating from 24–48 V supply.

IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled current sourcing to motor winding; operates in linear or PWM mode with gate driven by microcontroller GPIO + level shifter.

Use Value: 0.18 Ω R_DS(on) limits I²R heating at 12 A stall current; 200 mJ avalanche rating absorbs back-EMF spikes during abrupt stop commands.

Use Scenario: Synchronous rectifier or high-side switch in non-isolated buck converter for FPGA core voltage regulation (1.2 V @ 10 A).

IC Role / Device Role / Timing Role: Power switch controlling energy transfer from input to output inductor; switched at 300–500 kHz with precise dead-time control.

Use Value: 100 ns trr and low Q_rr minimize reverse recovery losses; 6 V/ns dv/dt immunity ensures stable operation despite fast edge rates in high-frequency designs.

Power Supplies

Industrial Automation

Use Scenario: Input protection switch in 48 V telecom power distribution unit with hot-swap and inrush limiting.

IC Role / Device Role / Timing Role: High-side disconnect switch placed between input connector and downstream DC-DC stages; controlled via dedicated hot-swap controller.

Use Value: 60 V V_DSS accommodates 48 V nominal + 20% surge; 12 A rating supports 500 W modules; TO-220 package allows direct heatsinking for sustained load currents.

Use Scenario: Solenoid driver in programmable logic controller (PLC) output module switching 24 V DC inductive loads (valves, relays).

IC Role / Device Role / Timing Role: Load switch interfacing microcontroller outputs to field devices; includes integrated flyback diode handling.

Use Value: Body diode V_SD = 2.5 V at 12 A provides predictable clamping; 100% avalanche testing ensures reliability over 100,000+ actuation cycles under worst-case inductance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540N	R_DS(on) = 0.2 Ω (typ), Q_g = 71 nC, E_AS not specified	Higher gate charge increases driver complexity; no published avalanche rating	Prefer STP12PF06 where fast switching, avalanche safety, or thermal efficiency is prioritized.
IXTP12P06T	R_DS(on) = 0.19 Ω (typ), Q_g = 22 nC, dv/dt = 4.5 V/ns	Lower dv/dt immunity may require gate clamping in high-noise environments	Choose STP12PF06 when operating near 6 V/ns edges or in unclamped inductive loads.

Compared with IRF9540N and IXTP12P06T, STP12PF06 delivers superior combination of low gate charge (16 nC), guaranteed avalanche energy (200 mJ), and higher dv/dt tolerance (6 V/ns), making it optimal for high-reliability motor drives and industrial power supplies where transient robustness is non-negotiable.

Availability

STP12PF06 is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and industrial power supplies requiring stable component supply, long-term lifecycle support, and traceable manufacturing origin.

Supply support for STP12PF06 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for automotive, industrial, and consumer markets.

STP12PF06 belongs to the STripFET™ II power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial motor drives and power conversion systems where ruggedness and thermal performance are critical.

FAQ

Is STP12PF06 a logic-level MOSFET?

No. STP12PF06 has a gate threshold voltage (V_GS(th)) of 2–4 V but requires −10 V gate-source voltage for full enhancement and minimum R_DS(on). It is not compatible with 3.3 V or 5 V logic-level drive without a gate driver or level shifter.

Can STP12PF06 replace an N-channel MOSFET in the same circuit?

No - STP12PF06 is a P-channel device with opposite polarity: source connects to high-side rail, drain to load. Replacing an N-channel MOSFET would require inverting gate drive logic, relocating the switch position (e.g., high-side vs. low-side), and verifying voltage referencing.

What is the maximum safe operating temperature for STP12PF06?

The absolute maximum junction temperature (T_j) is 175°C, but continuous operation above 150°C degrades reliability. With R_thj-case = 2.5 °C/W and 60 W dissipation limit at T_C = 25°C, proper heatsinking is required to maintain T_j < 125°C under 12 A load.

Does STP12PF06 have a built-in body diode, and what are its characteristics?

Yes - it integrates a parasitic body diode with forward voltage V_SD = 2.5 V at I_SD = 12 A and reverse recovery time t_rr = 100 ns. This diode supports freewheeling in inductive loads but is not optimized for synchronous rectification due to relatively high V_SD.

STP12PF06 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 850 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP12PF06 FAQ

1.How can I place an order for STP12PF06 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP12PF06 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP12PF06 reliable?

The price and inventory of STP12PF06 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP12PF06 is usually 5 days.

3.What payment methods are accepted for STP12PF06?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP12PF06 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP12PF06?

STP12PF06 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP12PF06 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP12PF06?

For technical support, including STP12PF06 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP12PF06 requirements.

6.How does Aetrix verify that STP12PF06 is sourced from the original manufacturer or authorized distributors?

All STP12PF06 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP12PF06 meets industry standards.

7.What is the process for return or replacement of STP12PF06?

All STP12PF06 units undergo pre-shipment inspection (PSI). If there is an issue with STP12PF06, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP12PF06 part is unused and in its original packaging.

Return procedure for STP12PF06:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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