STMicroelectronics STP130N10F3

Overview

STP130N10F3 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-220 package, rated for 100 V drain-source voltage, 9.6 mΩ typical R_DS(on) at V_GS = 10 V and I_D = 23 A, 120 A continuous drain current at T_C = 100 °C, and 250 W total power dissipation at T_C = 25 °C. It delivers high-current switching in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the STP130N10F3 datasheet, STP130N10F3 pinout, STP130N10F3 application, or STP130N10F3 equivalent, key selection criteria include R_DS(on) vs. temperature stability, avalanche energy rating (125 mJ), gate charge (57 nC), safe operating area under pulsed conditions, and thermal resistance (R_thj-case = 0.6 °C/W).

Technical Context

This device uses STMicroelectronics' STripFET™ III process to minimize on-resistance and gate charge while maintaining robust avalanche capability. Its 100% avalanche-tested design supports unclamped inductive switching in hard-switched topologies.

The MOSFET features a fast body diode with t_rr = 68 ns and Q_rr = 182 nC at T_j = 150 °C, enabling efficient synchronous rectification and flyback recovery. Thermal resistance junction-to-case is 0.6 °C/W, requiring direct mounting to heatsinks for sustained 120 A operation.

Key Specifications

Pinout & Package

STP130N10F3 is housed in a TO-220 package with isolated tab (pin 3). The case is electrically connected to the drain terminal, requiring insulating hardware when mounted to grounded heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Compared with IXTH120N10L2 and IRFP4668PBF, STP130N10F3 offers optimal balance of low gate charge (57 nC), isolated TO-220 packaging, and proven avalanche ruggedness-making it ideal for cost-sensitive, medium-frequency industrial power stages where thermal interface simplicity and reliability are prioritized over absolute R_DS(on) minimization.

Availability

STP130N10F3 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for STP130N10F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STP130N10F3 belongs to the STripFET™ III Power MOSFET product line, engineered specifically for high-current, high-efficiency switching in industrial power conversion and motor control applications where ruggedness and thermal performance are critical.

FAQ

What is the maximum continuous drain current for STP130N10F3 at 100 °C case temperature?

The maximum continuous drain current is 120 A at T_C = 100 °C, as specified in Table 2 of the official STMicroelectronics datasheet (Doc ID 018492 Rev 3). This rating assumes proper heatsinking and accounts for R_DS(on) increase with temperature. Derating is required above 100 °C case temperature.

Does STP130N10F3 have an isolated package, and what is its insulation rating?

Yes, STP130N10F3 uses a TO-220 package with electrically isolated tab. Its insulation withstand voltage is 2500 V RMS (1 s, T_C = 25 °C) from all three leads to external heatsink, enabling safe mounting to grounded metal enclosures without additional isolation hardware.

What is the typical gate charge and how does it affect driver selection?

Total gate charge (Q_g) is 57 nC at V_DD = 50 V, I_D = 120 A, and V_GS = 10 V. With a typical 4.7 Ω gate resistor, this yields ~270 ns effective turn-on time. Drivers must supply ≥0.6 A peak current to achieve sub-100 ns switching; lower-current drivers will increase switching losses proportionally.

Is STP130N10F3 suitable for avalanche-prone circuits like relay driving or inductive loads?

Yes-STP130N10F3 is 100% avalanche tested with a guaranteed single-pulse energy rating of 125 mJ (T_j = 25 °C, I_D = 50 A, V_DD = 50 V). This makes it appropriate for unclamped inductive switching in relay drivers, solenoid controls, and flyback snubberless designs without external protection components.