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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP13N60M2

Name: STP13N60M2
Brand: STMicroelectronics
SKU: STP13N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP13N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP13N60M2.pdf

Description:: MOSFET N-CH 600V 11A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP13N60M2 from STMicroelectronics is an N-channel 600 V, 350 mΩ typ. (380 mΩ max.), 11 A MDmesh™ M2 Power MOSFET in IPAK (TO-251) package, optimized for high-efficiency hard-switching and resonant converters in industrial SMPS, PFC stages, and auxiliary power supplies.

For engineers reviewing the STP13N60M2 datasheet, STP13N60M2 pinout, STP13N60M2 application, or STP13N60M2 equivalent, key selection criteria include its 17 nC total gate charge, 32 pF typical Coss, 100% avalanche-tested ruggedness, Zener-protected gate, and 15 V/ns diode recovery dv/dt rating under 11 A conditions.

Technical Context

This device employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce R_DS(on) and output capacitance while maintaining high voltage blocking. Its low Q_gd/Q_g ratio (9 nC / 17 nC) supports fast, controllable switching with reduced Miller-induced turn-off delay.

The integrated body diode exhibits 297 ns reverse recovery time at 11 A/100 A/µs and 2.8 µC Q_rr at 25 °C - characteristics validated for continuous conduction mode (CCM) PFC and flyback snubberless operation where diode softness and energy handling are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - rated for 400 V DC bus designs with ≥50% safety margin against transients in industrial AC-DC converters
R_DS(on) max	380 mΩ at V_GS = 10 V, I_D = 5.5 A - enables <1.2 W conduction loss at 11 A continuous drain current
Q_g	17 nC - reduces gate drive power requirement and allows use of lower-cost 1–2 W gate drivers in 100–300 kHz designs
C_oss	32 pF - minimizes capacitive turn-on loss and improves light-load efficiency in LLC resonant topologies
E_AS	125 mJ - supports unclamped inductive switching in motor control H-bridges without external snubbers
T_J max	150 °C - permits operation in sealed enclosures with limited airflow when paired with 1.14 °C/W R_thJC
dv/dt ruggedness	50 V/ns - ensures reliable operation during fast voltage transitions in high-side configurations with parasitic inductance

Pinout & Package

IPAK (TO-251) package with isolated tab (drain-connected), 3-pin single-ended configuration. Thermal resistance junction-to-case is 1.14 °C/W, enabling direct heatsink mounting via the metal tab.

Pin/Terminal	Circuit Role	Design Meaning
TAB (Drain)	High-voltage power output terminal	Electrically connected to drain; serves as primary thermal path to heatsink; requires isolation from PCB ground plane
G (Pin 1)	Gate control input	Zener-protected gate terminal; accepts ±25 V V_GS; low 6.6 Ω intrinsic gate resistance aids high-frequency drive stability
S (Pin 3)	Source return node	Reference point for gate drive; carries full load current; must be routed with low-inductance layout to minimize switching noise

Key Features

Feature	Design Value
MDmesh M2 technology	Combines ultra-low R_DS(on) × area with controlled C_oss profile - achieves 350 mΩ @ 600 V in IPAK footprint
100% avalanche tested	Each unit validated for repetitive E_AS = 125 mJ - eliminates need for overvoltage clamping in cost-sensitive flyback designs
Zener-protected gate	Integrated 25 V gate oxide protection - prevents ESD damage during assembly and enables robust gate drive in noisy industrial environments
Optimized C_oss profile	C_oss = 32 pF + C_oss,eq = 120 pF (0–480 V) - balances zero-voltage switching (ZVS) initiation and voltage-dependent loss in resonant converters
Low Q_gd/Q_g ratio	9 nC / 17 nC = 0.53 - suppresses Miller plateau duration, reducing cross-conduction risk in synchronous rectification and half-bridge topologies

Applications

Industrial Switched-Mode Power Supplies

Active PFC Front-End Stages

Use Scenario: Primary-side switch in 300–500 W open-frame AC-DC power supplies operating at 65–100 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary; handles 400 V DC bus with 11 A peak current.

Use Value: Low R_DS(on) and 17 nC Q_g enable >92% efficiency at full load while maintaining thermal margin on compact heatsinks.

Use Scenario: Boost switch in continuous conduction mode (CCM) active PFC circuits for DIN-rail power supplies and UPS systems.

IC Role / Device Role / Timing Role: Fast-turning, avalanche-rugged switch managing sinusoidal line-current shaping at 50–70 kHz.

Use Value: 50 V/ns dv/dt ruggedness and 297 ns trr prevent false triggering and diode failure during zero-crossing transitions.

Server Auxiliary Power Rails

Lighting Ballast & LED Driver Circuits

Use Scenario: Main switch in 12–24 V standby and auxiliary power converters for datacenter servers requiring high reliability.

IC Role / Device Role / Timing Role: Primary-side MOSFET in flyback topology delivering isolated 3.3 V/5 V/12 V rails with tight regulation.

Use Value: 125 mJ E_AS rating eliminates need for external RCD snubbers, reducing BOM count and improving long-term MTBF.

Use Scenario: High-side switch in dimmable LED drivers and electronic ballasts for commercial lighting fixtures.

IC Role / Device Role / Timing Role: Constant-current regulator switch operating in quasi-resonant (QR) or boundary conduction mode (BCM).

Use Value: Low C_oss (32 pF) and soft-recovery diode enable clean zero-voltage switching across 10–100% dimming range without audible noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW13N60M2	Same die, TO-247 package; R_thJC = 0.45 °C/W vs. 1.14 °C/W; higher ID_cont = 13 A at TC = 100 °C	Better thermal performance in high-power (>600 W), forced-air-cooled systems; larger footprint and higher cost	Select when junction temperature must stay below 125 °C under sustained 11 A load without oversized heatsink
FDPF13N60NZ	600 V, 380 mΩ, 11 A; Q_g = 22 nC; no Zener gate protection; C_oss = 45 pF	Higher switching loss and no built-in gate ESD protection; requires external gate clamp and careful layout	Acceptable only if gate driver includes discrete Zener and design budget accommodates 25% higher drive loss and layout overhead

Compared with STW13N60M2, STP13N60M2 trades thermal headroom for compact size and lower system cost in space-constrained 300–500 W applications; versus FDPF13N60NZ, it delivers superior ruggedness and gate robustness at identical R_DS(on), justifying premium in mission-critical industrial power.

Availability

STP13N60M2 is available at Aetrix Electronics and suitable for industrial switched-mode power supplies, active PFC front-end stages, and server auxiliary power rails requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for STP13N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This part belongs to ST's MDmesh™ M2 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC conversion in industrial power supplies and renewable energy interfaces.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP13N60M2 supports 7 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9368 Rev 6. This derating reflects thermal limits of the IPAK package's 1.14 °C/W R_thJC and ensures safe operation within the 150 °C maximum junction temperature under sustained load.

Does this MOSFET include integrated gate protection?

Yes - the STP13N60M2 features an integrated Zener diode between gate and source, rated for ±25 V V_GS. This protects the gate oxide from ESD events and transient overvoltage during PCB handling and system operation, eliminating the need for external gate clamps in most industrial applications.

Can STP13N60M2 replace STP12NM60ND in existing designs?

No - STP12NM60ND uses older MDmesh™ N2 technology with higher R_DS(on) (450 mΩ), slower switching (Q_g = 24 nC), and no Zener gate protection. While pin-compatible, substituting STP13N60M2 requires gate drive strength verification due to lower Q_g and may improve efficiency but alters timing margins in legacy layouts.

Is the body diode suitable for synchronous rectification?

No - the body diode has 297 ns reverse recovery time and 2.8 µC Q_rr at 25 °C, making it unsuitable for synchronous rectification above ~50 kHz. It is designed for freewheeling and clamping in hard-switched topologies, not high-frequency bidirectional conduction.

STP13N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II Plus

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 580 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP13N60M2 FAQ

1.How can I place an order for STP13N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP13N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP13N60M2 reliable?

The price and inventory of STP13N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP13N60M2 is usually 5 days.

3.What payment methods are accepted for STP13N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP13N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP13N60M2?

STP13N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP13N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP13N60M2?

For technical support, including STP13N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP13N60M2 requirements.

6.How does Aetrix verify that STP13N60M2 is sourced from the original manufacturer or authorized distributors?

All STP13N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP13N60M2 meets industry standards.

7.What is the process for return or replacement of STP13N60M2?

All STP13N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STP13N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP13N60M2 part is unused and in its original packaging.

Return procedure for STP13N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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