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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP13N80K5

Name: STP13N80K5
Brand: STMicroelectronics
SKU: STP13N80K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP13N80K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP13N80K5.pdf

Description:: MOSFET N-CH 800V 12A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:1,013

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Product details

Overview

STP13N80K5 from STMicroelectronics is an N-channel 800 V, 370 mΩ typ. (450 mΩ max), 12 A MDmesh K5 Power MOSFET in TO-220 package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial inverters. It features ultra-low gate charge (29 nC), 100% avalanche tested operation, and Zener-protected gate.

For engineers reviewing the STP13N80K5 datasheet, STP13N80K5 pinout, STP13N80K5 application, or STP13N80K5 equivalent, this device is selected for high-efficiency, high-reliability 600–800 V DC-link switching where low R_DS(on), fast switching (t_d(off) = 42 ns), and robust unclamped inductive switching capability are critical.

Technical Context

This MOSFET uses ST's proprietary MDmesh K5 vertical superjunction architecture to achieve a FoM (R_DS(on) × Q_g) of ~10.7 Ω·nC - enabling high power density in compact heatsink-constrained designs. Its 50 V/ns dv/dt ruggedness and 148 mJ single-pulse avalanche energy support reliable operation under transient overvoltage and inductive turn-off stress.

The integrated body diode exhibits 406 ns reverse recovery time (T_J = 25 °C) and 5.7 µC Q_rr, optimized for hard-switched topologies with moderate di/dt. Gate threshold voltage is tightly specified at 3–5 V (V_GS(th)), ensuring stable turn-on across temperature and compatible drive with standard 10 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	800 V - supports 600 V AC mains-derived DC bus with ≥20% margin for surge and ringing
R_DS(on) max	450 mΩ at V_GS = 10 V, I_D = 6 A - enables <1.5 W conduction loss at 12 A continuous drain current
Q_g	29 nC - reduces gate drive power and allows use of lower-cost, lower-current gate drivers
E_AS	148 mJ - withstands repetitive unclamped inductive switching events without failure
t_r/t_f	16 ns / 16 ns - minimizes switching transition losses in 50–100 kHz hard-switched converters
R_thJC	0.66 °C/W - enables efficient heat transfer to heatsink; junction-to-case thermal path dominates thermal design
I_D cont @ T_C=100°C	7.6 A - defines usable current derating in thermally constrained enclosures

Pinout & Package

TO-220 package: 3-pin through-hole, isolated tab (drain-connected), plastic body. Mounting requires insulating washer unless heatsink is electrically isolated.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate (G)	High-impedance control input; requires ≤±30 V drive; sensitive to ESD
2 (Center)	Drain (D)	High-voltage power terminal; connected to metal tab; primary heat path to heatsink
3 (Right)	Source (S)	Power return node; referenced to driver ground; carries full load current and diode recovery current

Key Features

Feature	Design Value
Ultra-low gate charge	29 nC total gate charge enables <1 W gate drive loss at 100 kHz with 10 Ω driver
Zener-protected gate	Integrated 30 V gate-source Zener clamps transients, eliminating need for external gate protection
100% avalanche tested	Every unit validated for 148 mJ single-pulse avalanche energy - guarantees ruggedness in real-world faults
MDmesh K5 technology	Vertical superjunction structure achieves 370 mΩ typ. R_DS(on) at 800 V - 30% lower than prior K3 generation
Low C_oss & C_rss	50 pF output capacitance and 2 pF reverse transfer capacitance reduce Miller effect and improve dv/dt immunity

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: Half-bridge switching in 3 kW industrial VFD output stage operating from 650 V DC bus.

IC Role / Device Role / Timing Role: High-side N-channel switch in hard-switched inverter leg; handles 12 A RMS motor current with 50 kHz PWM.

Use Value: Low R_DS(on) and avalanche rating prevent failure during motor short-circuit transients; TO-220 mechanical robustness suits vibration-prone cabinet mounting.

Use Scenario: Primary-side switch in 80+ Titanium server power supply LLC resonant converter.

IC Role / Device Role / Timing Role: Main switching FET in asymmetric half-bridge; operates at 100–200 kHz with zero-voltage switching assist.

Use Value: Ultra-low Q_g and C_iss minimize dead-time losses and enable precise timing control; 800 V rating accommodates 400 V AC input surges.

Telecom Rectifier Modules

EV Charger Front-End

Use Scenario: Active clamp forward converter in 3 kW telecom rectifier handling 380 V DC output.

IC Role / Device Role / Timing Role: Clamp switch managing transformer reset energy; subjected to high dv/dt during clamp discharge.

Use Value: 50 V/ns dv/dt ruggedness ensures reliable clamp operation without spurious turn-on; Zener gate protection eliminates external TVS.

Use Scenario: Boost PFC switch in 11 kW AC/DC on-board charger for Level 2 EV charging.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch operating at 65 kHz with 700 V DC-link peak.

Use Value: 148 mJ E_AS sustains repeated line-voltage dips and grid harmonics without degradation; TO-220 package simplifies thermal interface to cold plate.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW13N80K5	Same die, TO-247 package; R_thJC = 0.66 °C/W (vs. 3.57 °C/W for TO-220FP); higher ID_cont = 12 A @ T_C = 100 °C	Preferred for forced-air or liquid-cooled systems requiring >10 W dissipation; not suitable for space-constrained PCB-mount	Select when thermal budget exceeds TO-220 capability and board layout permits larger footprint.
IPP60R190C7	650 V rating, 190 mΩ R_DS(on), 60 A ID; CoolMOS C7 technology; lower Q_g (22 nC) but reduced voltage margin	Better efficiency below 400 V DC-link; unsuitable for 800 V bus or universal AC input with wide-range surge	Choose only if system DC bus is strictly ≤450 V and priority is ultra-low conduction loss over voltage headroom.

Compared with STW13N80K5, STP13N80K5 trades thermal performance for compact through-hole integration; versus IPP60R190C7, it sacrifices conduction efficiency for guaranteed 800 V operation and avalanche robustness in harsh grid-connected environments.

Availability

STP13N80K5 is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifiers, and EV charger front-end PFC stages requiring stable component supply and long-term manufacturing continuity.

Supply support for STP13N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, automotive ICs, and microcontrollers with vertical manufacturing capabilities.

STP13N80K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching in industrial, telecom, and renewable energy systems.

FAQ

What is the maximum safe operating voltage for STP13N80K5 in continuous DC applications?

The absolute maximum drain-source voltage (V_DSS) is 800 V, verified per JEDEC JESD22-A115. For continuous DC operation, ST recommends limiting V_DS to ≤640 V (80% of rating) to ensure margin against transients, temperature drift, and layout-induced overshoot - consistent with the 640 V test condition used in Q_g and E_AS characterization.

Does STP13N80K5 require a gate resistor, and what value is recommended for 100 kHz switching?

Yes - a gate resistor is required to dampen ringing and control dV/dt. For 100 kHz hard-switched operation with a 10 V gate driver, ST recommends R_G = 4.7 Ω (per Figure 20 test circuit), yielding t_d(on) ≈ 16 ns and t_d(off) ≈ 42 ns. Lower values increase switching speed but risk gate oscillation; higher values reduce EMI at the cost of increased switching loss.

Can STP13N80K5 be used in synchronous rectification configurations?

No - STP13N80K5 is a standard N-channel enhancement-mode MOSFET with a non-optimized body diode (t_rr = 406 ns, Q_rr = 5.7 µC). Its diode is not designed for reverse recovery in SR topologies; dedicated synchronous rectifier FETs (e.g., STP16NF06L) feature faster, softer recovery and lower V_SD.

Is the TO-220 package of STP13N80K5 lead-free and RoHS compliant?

Yes - STP13N80K5 is manufactured in ST's ECOPACK2-compliant TO-220 package, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. The device carries the "E2" grade marking per ST's ECOPACK specification, indicating halogen-free molding compound and lead-free terminations.

STP13N80K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH5™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 450mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 870 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP13N80K5 FAQ

1.How can I place an order for STP13N80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP13N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP13N80K5 reliable?

The price and inventory of STP13N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP13N80K5 is usually 5 days.

3.What payment methods are accepted for STP13N80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP13N80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP13N80K5?

STP13N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP13N80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP13N80K5?

For technical support, including STP13N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP13N80K5 requirements.

6.How does Aetrix verify that STP13N80K5 is sourced from the original manufacturer or authorized distributors?

All STP13N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP13N80K5 meets industry standards.

7.What is the process for return or replacement of STP13N80K5?

All STP13N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STP13N80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP13N80K5 part is unused and in its original packaging.

Return procedure for STP13N80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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