STMicroelectronics STP13N95K3

Overview

STP13N95K3 from STMicroelectronics is an N-channel 950 V, 680 mΩ typ. (850 mΩ max), 10 A MDmesh K3 Power MOSFET in TO-220 package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial inverters. It features 100% avalanche tested ruggedness, 9 V/ns dv/dt capability, and improved diode reverse recovery (trr = 500 ns, Qrr = 9 µC) for reliable hard-switching operation.

For engineers reviewing the STP13N95K3 datasheet, STP13N95K3 pinout, STP13N95K3 application, or STP13N95K3 equivalent, key selection criteria include its 950 V V_DS, low R_DS(on) at 10 V gate drive, Zener-protected gate, and TO-220 thermal resistance (R_thJC = 3.13 °C/W) - critical for high-efficiency, high-reliability HV power conversion designs.

Technical Context

This device employs ST's MDmesh K3 vertical superjunction architecture optimized for high-voltage, low-conduction-loss operation. Its 1620 pF C_iss, 117 pF C_oss, and 1.2 pF Crss enable fast, controllable switching with minimal Miller effect, while the intrinsic body diode delivers 10 A continuous source-drain current and 1.6 V forward voltage at 10 A.

The MOSFET supports unclamped inductive switching with 400 mJ single-pulse avalanche energy (E_AS) at T_J = 25 °C and operates safely up to 150 °C junction temperature. Its ±30 V V_GS rating and 3–5 V gate threshold ensure robust gate control under transient conditions.

Key Specifications

Pinout & Package

STP13N95K3 is housed in a TO-220 package with isolated tab (Type A). The case is electrically connected to the drain terminal, requiring insulated mounting hardware when used in non-ground-referenced topologies.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW13N95K3, STP13N95K3 trades thermal performance for lower cost and smaller footprint; versus IPP65R095CFD7, it offers superior avalanche immunity and lower gate charge at the expense of slightly higher conduction loss - making it optimal for cost-sensitive, reliability-critical HV industrial switching.

Availability

STP13N95K3 is available at Aetrix Electronics and suitable for industrial motor drives, photovoltaic inverters, server SMPS, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for STP13N95K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

The MDmesh K3 product line targets high-efficiency, high-reliability high-voltage power conversion - specifically engineered to replace older planar MOSFETs in 600–1000 V applications where conduction loss, switching loss, and ruggedness are co-optimized.

FAQ

Is STP13N95K3 suitable for use in a hard-switched PFC boost converter?

Yes. Its 950 V V_DS, 680 mΩ typical R_DS(on), and 9 V/ns dv/dt rating make it well-suited for continuous conduction mode (CCM) PFC stages operating from universal AC input. The low Q_rr (9 µC) and soft diode recovery minimize voltage overshoot during turn-off, reducing stress on the output capacitor and EMI filter components.

What is the maximum recommended gate resistor value for reliable switching at 100 kHz?

For 100 kHz operation with 51 nC total gate charge, a gate resistor of 10–22 Ω is recommended when paired with a 1.5 A peak gate driver. This balances switching speed (td(on)/td(off) ≈ 18/50 ns) against ringing and EMI; values above 33 Ω increase switching losses significantly without meaningful noise reduction.

Does STP13N95K3 require a heatsink in a 10 A, 25 °C ambient application?

Yes. At 10 A continuous and 25 °C ambient, conduction loss alone exceeds 85 W (I²R = 10² × 0.85 Ω). With R_thJC = 3.13 °C/W and typical R_thCA > 10 °C/W for TO-220, junction temperature would exceed 150 °C without a heatsink. A minimum 3.5 °C/W heatsink is required to maintain T_J ≤ 125 °C at full load.

Can STP13N95K3 be paralleled with other units for higher current handling?

Yes, but with strict layout and gate drive matching. Its positive R_DS(on) temperature coefficient (R_DS(on) increases with T_J) enables inherent current sharing. However, gate loop inductance must be balanced to within 0.5 nH, and individual gate resistors (≥10 Ω) are mandatory to suppress oscillation. Derate total current by 20% for two devices in parallel.