STMicroelectronics STP13NK50Z

Overview

STP13NK50Z from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 500 V drain-source voltage, 400 mΩ typical R_DS(on), and 11 A continuous drain current at T_C = 25 °C. It features 100% avalanche testing, 4.5 V/ns peak diode recovery dv/dt capability, and gate charge minimized to 47 nC - deployed in high-reliability AC-DC power supplies and industrial motor drives.

For engineers reviewing the STP13NK50Z datasheet, STP13NK50Z pinout, STP13NK50Z application, or STP13NK50Z equivalent, key selection criteria include verified avalanche energy (240 mJ), Zener-protected gate structure, TO-220FP thermal resistance (R_thJC = 4.17 °C/W), and unclamped inductive switching performance under 400 V bus conditions.

Technical Context

This device implements ST's SuperMESH process - an evolution of PowerMESH - delivering reduced on-resistance while preserving high dv/dt immunity (4.5 V/ns) and robust unclamped inductive switching behavior. Its Zener-protected gate ensures ±30 V V_GS tolerance and 2.5 kV HBM ESD rating.

The integrated body diode supports source-drain currents up to 11 A (continuous) and 44 A (pulsed), with reverse recovery time (t_rr) of 380 ns at 6.5 A/100 A/µs and Q_rr = 3.4 µC - critical for hard-switched PFC and flyback snubberless topologies.

Key Specifications

Pinout & Package

Supplied in TO-220FP (Type B) package: isolated tab, vertical mounting, 3-pin through-hole configuration with integral heat sink interface. Thermal pad electrically connected to drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STF13NK50Z and STW13NK50Z, STP13NK50Z shares identical die but is obsolete per DS5422 Rev 3 - STF13NK50Z is the active, drop-in replacement with identical specs and TO-220FP insulation; STW13NK50Z offers superior thermal performance but requires redesign for gate protection and mechanical mounting.

Availability

STP13NK50Z is available at Aetrix Electronics and suitable for AC-DC power supplies, industrial motor drives, and LED street lighting drivers requiring stable component supply and long-term lifecycle support.

Supply support for STP13NK50Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The SuperMESH Power MOSFET product line targets high-efficiency, high-reliability switching applications in offline power conversion - emphasizing avalanche ruggedness, low gate charge, and thermal robustness in cost-sensitive industrial power systems.

FAQ

Is STP13NK50Z still in active production?

No - STP13NK50Z was formally discontinued in DS5422 Rev 3 (February 2026). STF13NK50Z is the direct, functionally identical replacement in the same TO-220FP package, with identical electrical specs, pinout, and thermal characteristics. Inventory of STP13NK50Z is limited to remaining distributor stock.

What is the significance of "100% avalanche tested" for this MOSFET?

Each STP13NK50Z unit undergoes individual unclamped inductive switching validation at E_AS = 240 mJ, ensuring guaranteed single-pulse ruggedness. This eliminates statistical failure risk in surge-prone applications like mains-connected PFC stages, where transient energy absorption must be deterministic rather than probabilistic.

Can STP13NK50Z be used in place of STF13NK50Z without design changes?

Yes - STP13NK50Z and STF13NK50Z share identical die, electrical parameters, pinout, and TO-220FP mechanical form factor. The only difference is marking and packaging (tube vs. tape-and-reel); no schematic, layout, or thermal design modifications are needed for substitution in existing designs.

Why does the datasheet specify both R_DS(on) typ. (400 mΩ) and max (480 mΩ)?

The 400 mΩ typical value reflects median production performance under V_GS = 10 V and I_D = 6.5 A; the 480 mΩ maximum guarantees worst-case conduction loss across temperature, process variation, and lifetime. Designers must use the max value for thermal and efficiency calculations to ensure margin at end-of-life and high ambient conditions.