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STMicroelectronics STP13NK60Z
- Part No.:
- STP13NK60Z
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP13NK60Z.pdf
- Description:
- MOSFET N-CH 600V 13A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:754
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Product details
Overview
STP13NK60Z from STMicroelectronics is a Zener-protected N-channel 600 V SuperMESH Power MOSFET in TO-220 package, rated for 13 A continuous drain current at TC = 25 °C, with typical RDS(on) of 0.48 Ω and 100% avalanche tested. It delivers high dv/dt capability (4.5 V/ns) and low gate charge (66–92 nC), enabling robust switching in offline SMPS, PFC stages, and industrial motor drives.
For engineers reviewing the STP13NK60Z datasheet, STP13NK60Z pinout, STP13NK60Z application, or STP13NK60Z equivalent, key selection criteria include its 600 V VDS, 0.55 Ω max RDS(on), 150 W PTOT at TC = 25 °C, 400 mJ EAS, and Zener-protected gate-critical for reliability in high-voltage transient environments.
Technical Context
This device implements ST's SuperMESH technology-a refined iteration of PowerMESH-optimized to reduce on-resistance while preserving ruggedness. Its Zener-protected gate structure eliminates external gate-clamp diodes in most designs, and its 4.5 V/ns peak diode recovery dv/dt rating supports fast-switching inductive loads without spurious turn-on.
The MOSFET features a built-in source-drain diode with 10 A continuous rating, 40 A pulsed capability, and 570 ns reverse recovery time at TJ = 150 °C. Its safe operating area (SOA) is validated up to 10 A at 480 V for unclamped inductive switching, with single-pulse avalanche energy of 400 mJ at TJ = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Withstands full mains-derived DC bus voltages in 400 V AC input systems with margin. |
| RDS(on) max | 0.55 Ω - Limits conduction loss to ≤3.4 W at 8.2 A (TC = 100 °C), enabling thermally constrained designs. |
| ID cont @ TC = 25 °C | 13 A - Supports medium-power switch-mode topologies without forced cooling. |
| EAS | 400 mJ - Absorbs unclamped inductive energy during fault conditions without failure. |
| Qg | 66–92 nC - Enables efficient gate driving with standard 1–2 A peak drivers at 100 kHz+ switching frequencies. |
| dv/dt rating | 4.5 V/ns - Prevents false triggering during fast voltage transients in bridge-leg configurations. |
| VISO | 2.5 kV RMS - Allows direct mounting to insulated heatsinks in Class I safety-compliant power supplies. |
Pinout & Package
STP13NK60Z uses the TO-220 package (Type A), with metal tab electrically connected to the drain terminal. The case provides mechanical stability and thermal path to heatsink, while the plastic body insulates gate and source leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Left) | Gate (G) | High-impedance control input; requires <±30 V gate-source voltage; Zener-protected against overvoltage. |
| 2 (Middle) | Drain (D) | Main high-side power terminal; connected to metal tab; carries full load current and withstands 600 V. |
| 3 (Right) | Source (S) | Power return node; referenced to gate drive ground; forms common node with internal body diode cathode. |
Key Features
| Feature | Design Value |
|---|---|
| SuperMESH process technology | Reduces RDS(on) by ~20% vs. prior PowerMESH generation while maintaining SOA integrity. |
| Zener-protected gate | Integrates bidirectional 30 V clamp across G–S, eliminating need for external TVS in most gate-drive circuits. |
| 100% avalanche tested | Every unit undergoes single-pulse unclamped inductive test at rated IAR = 10 A, ensuring production-line ruggedness. |
| Low Ciss/Crss ratio | 2030 pF / 48 pF = 42.3 - Improves Miller immunity and enables stable operation with high dv/dt edge rates. |
| Enhanced diode recovery | 570 ns trr with 4.5 µC Qrr - Reduces switching losses and EMI in hard-commutated flyback and resonant converters. |
Applications
| AC-DC Adapter Primary Switch | Industrial Motor Drive Half-Bridge |
|---|---|
|
Use Scenario: 65–150 W universal-input offline flyback converter with primary-side regulation. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from bulk capacitor to transformer primary. Use Value: 0.48 Ω RDS(on) minimizes conduction loss at 70–100 kHz; 400 mJ EAS handles leakage inductance spikes without snubber redesign. |
Use Scenario: 1–3 kW three-phase inverter stage for pump/fan control using discrete half-bridge modules. IC Role / Device Role / Timing Role: High-side switching element in each leg, synchronized with complementary low-side MOSFET. Use Value: 4.5 V/ns dv/dt rating prevents false turn-on during cross-conduction; Zener gate protection reduces gate driver component count. |
| Server PSU PFC Boost Switch | LED Streetlight Driver |
|
Use Scenario: Continuous-conduction-mode (CCM) boost PFC stage in 300–500 W telecom/server power supply. IC Role / Device Role / Timing Role: Fast-switching boost switch operating at 65–100 kHz with critical conduction control. Use Value: Low Qgd/Qgs ratio (33/11 = 3.0) improves controllability during zero-voltage transitions; 150 W PTOT allows natural convection cooling. |
Use Scenario: Isolated buck-boost LED driver for outdoor street lighting with 300–400 V DC bus. IC Role / Device Role / Timing Role: Primary-side switch regulating constant-current output via secondary feedback. Use Value: 2.5 kV VISO permits direct heatsink mounting without isolation pads; 10 A ISD supports active burst-mode dimming with body diode conduction. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12NK60Z | 600 V, 0.65 Ω max RDS(on), 12 A ID - lower current and higher on-resistance. | Suitable for ≤100 W adapters where thermal margin is ample; not recommended for 13 A continuous loads. | Select when cost sensitivity outweighs efficiency needs and peak current stays below 10 A. |
| FQP13N60C | 600 V, 0.55 Ω max RDS(on), 13 A - same RDS(on) but no Zener gate protection or 100% avalanche test. | Lacks integrated gate clamp; requires external 18–22 V TVS; lower EAS (250 mJ) limits fault tolerance. | Choose only if gate drive circuit already includes robust clamping and system-level avalanche stress is negligible. |
Compared with STP12NK60Z, STP13NK60Z delivers +8% current headroom and −15% conduction loss; versus FQP13N60C, it adds gate-Zener protection and verified 400 mJ avalanche capability-critical for field-reliable industrial deployments.
Availability
STP13NK60Z is available at Aetrix Electronics and suitable for AC-DC power supplies, industrial motor drives, LED drivers, and PFC boost converters requiring stable component supply and long-term manufacturability.
Supply support for STP13NK60Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.
STP13NK60Z belongs to the SuperMESH Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 400–600 V DC-link applications where avalanche ruggedness and gate robustness are non-negotiable.
FAQ
What is the maximum junction temperature for STP13NK60Z?
The operating junction temperature range is −55 °C to 150 °C. Absolute maximum TJ is enforced by thermal shutdown in practical designs; derating begins above 125 °C per the RthJC = 3.6 °C/W spec, limiting continuous ID to 8.2 A at TC = 100 °C.
Does STP13NK60Z require an external gate resistor for stability?
A gate resistor (RG = 4.7 Ω typical) is required to dampen ringing and control dI/dt during switching, as confirmed by test circuits in DS2636 (Figure 18 and Figure 20). Values outside 2.2–10 Ω may cause excessive switching loss or oscillation depending on PCB layout and driver strength.
Can STP13NK60Z be used in synchronous rectification?
No-it is an N-channel enhancement-mode MOSFET optimized for high-side switching, not low-side synchronous rectification. Its body diode forward voltage (1.6 V at 10 A) and reverse recovery characteristics (570 ns trr) are unsuited for SR duty; dedicated SR controllers and logic-level MOSFETs are required instead.
Is the TO-220 package lead-free and RoHS compliant?
Yes-STP13NK60Z is supplied in ECOPACK®-compliant TO-220 packaging, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. Lead finish is matte tin, and halogen-free molding compound is used per ST's environmental specifications.
STP13NK60Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperMESH™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 550mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 92 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2030 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP13NK60Z FAQ
1.How can I place an order for STP13NK60Z through Aetrix?
Please submit a Request for Quotation (RFQ) for STP13NK60Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP13NK60Z reliable?
The price and inventory of STP13NK60Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP13NK60Z is usually 5 days.
3.What payment methods are accepted for STP13NK60Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP13NK60Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP13NK60Z?
STP13NK60Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP13NK60Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP13NK60Z?
For technical support, including STP13NK60Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP13NK60Z requirements.
6.How does Aetrix verify that STP13NK60Z is sourced from the original manufacturer or authorized distributors?
All STP13NK60Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP13NK60Z meets industry standards.
7.What is the process for return or replacement of STP13NK60Z?
All STP13NK60Z units undergo pre-shipment inspection (PSI). If there is an issue with STP13NK60Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP13NK60Z part is unused and in its original packaging.
Return procedure for STP13NK60Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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