STMicroelectronics STP13NK60ZFP
- Part No.:
- STP13NK60ZFP
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
STP13NK60ZFP.pdf
- Description:
- MOSFET N-CH 600V 13A TO220FP
- Quantity:
- Payment:

- Shipping:

Inventory:4,810
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Product details
Overview
STP13NK60ZFP from STMicroelectronics is a Zener-protected N-channel 600 V SuperMESH Power MOSFET in TO-220FP package, rated for 13 A continuous drain current at TC = 25 °C, with typical RDS(on) of 0.48 Ω and 100% avalanche tested. It delivers high dv/dt capability (4.5 V/ns) and low gate charge (66–92 nC), enabling robust switching in offline SMPS and PFC stages.
For engineers reviewing the STP13NK60ZFP datasheet, STP13NK60ZFP pinout, STP13NK60ZFP application, or STP13NK60ZFP equivalent, key selection criteria include its 600 V VDS, TO-220FP thermal resistance (RthJC = 3.6 °C/W), avalanche energy rating (EAS = 400 mJ), and Zener-protected gate structure - all critical for high-reliability industrial power conversion designs.
Technical Context
This device implements ST's SuperMESH process - an evolution of PowerMESH - to reduce on-resistance while maintaining high voltage ruggedness and fast switching. Its Zener-protected gate ensures ±30 V VGS tolerance and 4 kV HBM ESD rating, eliminating external gate protection in many applications.
The MOSFET features optimized capacitance profile (Ciss = 2030 pF, Crss = 48 pF) and fast switching times (td(off) = 61 ns, tf = 9 ns under inductive load), supporting high-frequency operation up to 100 kHz in hard-switched topologies without compromising SOA integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Supports universal-input offline converters (85–265 VAC) with ≥2× safety margin against line transients. |
| RDS(on) typ. | 0.48 Ω - Enables <1.1 W conduction loss at 13 A, reducing heatsink requirements in 150–300 W SMPS designs. |
| ID cont. (TC = 25 °C) | 13 A - Sustains full-load current in single-switch flyback or forward converters without derating at ambient ≤40 °C. |
| EAS | 400 mJ - Absorbs unclamped inductive energy during fault events, eliminating need for external snubbers in motor drive IGBT gate drivers. |
| dv/dt rating | 4.5 V/ns - Withstands rapid voltage transients in phase-cut dimmers and relay-contact bounce, preventing false turn-on. |
| Qg | 66–92 nC - Low gate drive power enables use with standard 1-A gate drivers (e.g., STGAP2S), reducing driver cost and PCB area. |
| RthJC | 3.6 °C/W - Delivers 35 W total power dissipation at TC = 25 °C, suitable for compact TO-220FP mounting on 2-oz copper with minimal thermal interface material. |
Pinout & Package
STP13NK60ZFP uses the TO-220FP (Full-Pak) package: insulated plastic case with integral heat sink tab, enabling direct mounting to chassis without insulating pads. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate terminal | High-impedance control input; requires <4.5 V threshold to turn on; Zener-clamped to ±30 V for robustness. |
| Pin 2 (D) | Drain terminal / Heat sink tab | Electrically connected to drain; serves as primary thermal path - must be electrically isolated from PCB ground plane. |
| Pin 3 (S) | Source terminal | Reference node for gate drive; carries full load current; connects to low-side switch node in buck/forward topologies. |
Key Features
| Feature | Design Value |
|---|---|
| 100% Unclamped Avalanche Tested | Guarantees minimum 400 mJ single-pulse energy handling at TJ = 25 °C - verified per JEDEC JESD24-11, not sampled. |
| SuperMESH Process Optimization | Reduces RDS(on) by 25% vs. prior PowerMESH generation while preserving 600 V breakdown and SOA - validated across wafer lots. |
| Zener-Gate Protection | Integrated bidirectional Zener (±30 V) eliminates external TVS diodes in gate drive circuits, saving BOM cost and layout space. |
| High dv/dt Immunity | 4.5 V/ns rating confirmed under ISD ≤ 10 A, di/dt ≤ 200 A/μs, VDD = 480 V - prevents spurious turn-on in noisy industrial environments. |
Applications
| Industrial SMPS | LED Driver Power Stage |
|---|---|
|
Use Scenario: 200 W open-frame AC-DC power supply for PLC I/O modules operating in 0–60 °C ambient. IC Role / Device Role / Timing Role: Primary-side switching transistor in discontinuous conduction mode (DCM) flyback converter. Use Value: 0.48 Ω RDS(on) limits conduction loss to <1.2 W at full load, enabling natural convection cooling without fan. |
Use Scenario: Constant-current LED driver for street lighting with TRIAC dimming compatibility. IC Role / Device Role / Timing Role: High-side switch in trailing-edge dimmer interface circuit handling 120 VAC phase-cut waveforms. Use Value: 4.5 V/ns dv/dt immunity prevents false triggering during zero-crossing noise, ensuring stable dimming down to 5% intensity. |
| Motor Drive Gate Driver | UPS Inverter Stage |
|
Use Scenario: Isolated gate driver stage for 3-phase BLDC motor controller in HVAC compressors. IC Role / Device Role / Timing Role: Low-side switch in bootstrap-fed half-bridge driving IR2104-level gate signals. Use Value: 400 mJ EAS safely clamps inductive kickback from motor windings during short-circuit faults, avoiding driver IC damage. |
Use Scenario: DC-AC inverter stage in 1 kVA online UPS with battery backup and pure sine-wave output. IC Role / Device Role / Timing Role: Switching element in full-bridge topology operating at 20 kHz PWM frequency. Use Value: 66 nC Qg enables efficient gate drive with STGAP2S, reducing driver power consumption by 35% vs. legacy 120 nC MOSFETs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12NK60Z | 600 V, 0.65 Ω max RDS(on), 12 A ID - higher on-resistance and lower current rating. | Lower power density; suitable only for ≤120 W designs where thermal margin is ample. | Select when cost sensitivity outweighs efficiency targets and board space allows larger heatsink. |
| FQP13N60C | 600 V, 0.55 Ω max RDS(on), 13 A ID - no Zener gate protection; 2.5 kV isolation rating vs. STP13NK60ZFP's 2.5 kV. | Lacks integrated gate clamp; requires external 18 V Zener and series resistor, increasing component count. | Choose only if gate drive circuit already includes discrete protection and qualification for Zener-protected operation is waived. |
Compared with STP12NK60Z and FQP13N60C, STP13NK60ZFP provides superior thermal performance (3.6 °C/W vs. ≥4.2 °C/W), guaranteed avalanche ruggedness, and gate-integrated protection - delivering higher reliability in unattended industrial systems without design overhead.
Availability
STP13NK60ZFP is available at Aetrix Electronics and suitable for industrial SMPS, LED driver power stages, motor drive gate drivers, and UPS inverter stages requiring stable component supply and long-term manufacturing continuity.
Supply support for STP13NK60ZFP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications since 1987.
STP13NK60ZFP belongs to the SuperMESH Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies and motor control systems demanding ruggedness and low conduction loss.
FAQ
Is STP13NK60ZFP pin-compatible with STP12NK60Z?
Yes - both use identical TO-220FP package with Gate (Pin 1), Drain/Tab (Pin 2), and Source (Pin 3) pinout. Mechanical footprint, mounting hole pattern, and thermal pad alignment match exactly, enabling drop-in replacement in existing layouts without PCB revision.
What is the maximum recommended gate resistor value for hard-switched 65 kHz operation?
For 65 kHz hard-switched operation with VGS = 10 V drive, RG ≤ 10 Ω ensures td(on) ≤ 22 ns and tf ≤ 9 ns as specified in DS2636 Rev 8. Higher values increase switching losses and risk shoot-through in bridge configurations due to extended overlap time.
Does STP13NK60ZFP require external gate protection when driven by microcontroller GPIO?
No - its integrated bidirectional Zener clamps gate-source voltage to ±30 V and provides 4 kV HBM ESD protection. Direct connection to 3.3 V or 5 V MCU GPIO is safe; however, a 10–47 Ω series gate resistor is still recommended to dampen ringing and limit peak current during fast transitions.
Can STP13NK60ZFP replace STW13NK60Z in a TO-247-based design?
No - STW13NK60Z uses TO-247 package (RthJC = 0.83 °C/W, 150 W PTOT), while STP13NK60ZFP uses TO-220FP (RthJC = 3.6 °C/W, 35 W PTOT). Substitution would cause thermal overload above ~12 W dissipation; mechanical mounting and PCB footprint are also incompatible.
STP13NK60ZFP Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperMESH™
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 550mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 92 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2030 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
STP13NK60ZFP FAQ
1.How can I place an order for STP13NK60ZFP through Aetrix?
Please submit a Request for Quotation (RFQ) for STP13NK60ZFP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP13NK60ZFP reliable?
The price and inventory of STP13NK60ZFP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP13NK60ZFP is usually 5 days.
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STP13NK60ZFP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP13NK60ZFP order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP13NK60ZFP?
For technical support, including STP13NK60ZFP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP13NK60ZFP requirements.
6.How does Aetrix verify that STP13NK60ZFP is sourced from the original manufacturer or authorized distributors?
All STP13NK60ZFP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP13NK60ZFP meets industry standards.
7.What is the process for return or replacement of STP13NK60ZFP?
All STP13NK60ZFP units undergo pre-shipment inspection (PSI). If there is an issue with STP13NK60ZFP, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP13NK60ZFP part is unused and in its original packaging.
Return procedure for STP13NK60ZFP:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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