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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP13NM50N

Name: STP13NM50N
Brand: STMicroelectronics
SKU: STP13NM50N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP13NM50N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP13NM50N.pdf

Description:: MOSFET N-CH 500V 12A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:6,085

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Product details

Overview

STP13NM50N from STMicroelectronics is an N-channel 500 V, 0.25 Ω (typ), 12 A MDmesh™ II Power MOSFET in TO-220 package, designed for high-efficiency switching converters operating at high voltage and moderate current. It features 100% avalanche tested ruggedness, low gate charge (30 nC), and low input capacitance (960 pF), enabling fast switching in SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STP13NM50N datasheet, STP13NM50N pinout, STP13NM50N application, or STP13NM50N equivalent, this device is selected for its optimized R_DS(on) × Q_g figure-of-merit, thermal robustness (R_thj-case = 1.25 °C/W), and proven performance in hard-switched 400–500 V DC bus topologies.

Technical Context

This MOSFET employs ST's second-generation MDmesh™ vertical structure with strip layout, delivering ultra-low on-resistance and gate charge simultaneously. Its 500 V V_DSS rating supports operation across universal-input AC/DC front-ends and offline DC-DC converters.

The device integrates a fast, soft-recovery body diode (t_rr = 300 ns, Q_rr = 3 µC at T_j = 25 °C), enabling reliable operation in synchronous rectification and freewheeling roles without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - Supports 400 V DC bus with 25% margin for surge and ripple in offline power supplies.
R_DS(on) max	0.32 Ω @ V_GS = 10 V - Ensures <1.5 W conduction loss at 12 A continuous drain current (T_C = 25 °C).
Q_g	30 nC - Enables efficient gate drive with standard 1–2 A peak drivers at 100–300 kHz switching frequencies.
C_iss	960 pF - Low input capacitance reduces Miller effect and improves turn-on stability under high dv/dt conditions.
t_r/t_f	15 ns / 10 ns - Fast edge rates support high-frequency operation while minimizing switching losses in hard-switched topologies.
E_AS	200 mJ - Single-pulse avalanche energy rating confirms ruggedness in inductive load switching and fault transients.
R_thj-case	1.25 °C/W - Enables 100 W dissipation with ≤125 °C junction-to-case temperature rise using standard heatsinking.

Pinout & Package

STP13NM50N is housed in a through-hole TO-220 package with three leads: Gate (pin 1), Drain (pin 2), Source (pin 3). The metal tab (Drain-connected) provides mechanical mounting and thermal path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	High-impedance control terminal; requires <30 nC charge for full enhancement; sensitive to ESD.
Pin 2 (D)	Drain	Main high-voltage power terminal; electrically connected to metal tab; must be isolated from heatsink unless referenced to same potential.
Pin 3 (S)	Source	Power return and reference node for gate drive; forms common node with driver ground in low-side configurations.

Key Features

Feature	Design Value
MDmesh™ II technology	Combines low R_DS(on) and low Q_g via optimized vertical trench + strip layout-reducing conduction and switching loss trade-off.
100% avalanche rated	Guarantees survivability under unclamped inductive switching (IAS = 3.5 A) without derating or external snubbers.
Low C_oss (50 pF)	Minimizes capacitive turn-off loss and improves efficiency in resonant and quasi-resonant LLC converters.
Soft-recovery body diode	t_rr = 300 ns, Q_rr = 3 µC - Reduces diode reverse recovery noise and EMI in flyback and forward converters.
ECOPACK® compliant	Lead-free second-level interconnect meets RoHS and JEDEC JESD97 standards; suitable for lead-free reflow and wave soldering.

Applications

AC/DC SMPS Primary Switch

PFC Boost Switch

Use Scenario: 500 W universal-input offline flyback or forward converter operating at 65–100 kHz.

IC Role / Device Role / Timing Role: High-voltage primary-side power switch handling 400–500 V DC bus and 12 A peak current.

Use Value: Low R_DS(on) minimizes conduction loss; fast t_r/t_f and low Q_g reduce switching loss and gate drive complexity.

Use Scenario: Active boost PFC stage in industrial power supplies or LED drivers requiring >95% efficiency.

IC Role / Device Role / Timing Role: Main switching element in continuous conduction mode (CCM) boost topology.

Use Value: Avalanche ruggedness ensures reliability during line surges; low C_iss improves light-load efficiency and EMI behavior.

Industrial Motor Drive Inverter

UPS DC-DC Stage

Use Scenario: Half-bridge leg in 1–3 kW variable-speed drives powering 3-phase induction motors.

IC Role / Device Role / Timing Role: Low-side switching device in IGBT/MOSFET hybrid or all-MOSFET inverter output stage.

Use Value: Soft-recovery body diode enables clean freewheeling without shoot-through risk; R_thj-case = 1.25 °C/W simplifies thermal design.

Use Scenario: Isolated DC-DC converter in online UPS systems converting 400 V DC bus to 12/48 V battery charging rails.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge or active-clamp forward topology.

Use Value: High V_DSS margin accommodates bus overvoltage during battery recharge transients; E_AS rating protects against transformer saturation faults.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NM50	R_DS(on) max = 0.38 Ω; Q_g = 27 nC; same TO-220 package and 500 V rating.	Slightly higher conduction loss at full load; otherwise identical pinout and thermal profile.	Prefer when lower gate charge is prioritized over minimal R_DS(on) improvement.
FQP13N50C	R_DS(on) max = 0.36 Ω; Q_g = 42 nC; no avalanche rating; TO-220 package.	Lacks 100% avalanche testing and has higher switching loss due to elevated Q_g.	Select only for cost-sensitive, non-critical applications where fault robustness is not required.

Compared with STP12NM50 and FQP13N50C, STP13NM50N delivers superior R_DS(on) × Q_g FoM and guaranteed avalanche capability-making it the preferred choice for industrial-grade, high-reliability 500 V switching where thermal margin and transient survivability are critical.

Availability

STP13NM50N is available at Aetrix Electronics and suitable for AC/DC SMPS, PFC boost stages, and industrial motor drive inverters requiring stable component supply and long-term manufacturability.

Supply support for STP13NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline power conversion and industrial motor control applications.

FAQ

What is the maximum continuous drain current for STP13NM50N at 100 °C case temperature?

The maximum continuous drain current is 6 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This reflects thermal derating due to reduced heat dissipation capacity at elevated case temperatures, and must be respected to maintain junction temperature ≤150 °C.

Is STP13NM50N suitable for use in a synchronous rectifier configuration?

No-STP13NM50N is not optimized for synchronous rectification. Its body diode, while soft-recovering, exhibits V_SD = 1.3 V at 12 A, resulting in higher conduction loss than dedicated SR MOSFETs. It is intended for primary-side switching, not secondary-side rectification.

Does STP13NM50N require a gate resistor for safe operation?

Yes-a gate resistor (typically 4.7–10 Ω) is required to dampen ringing, limit peak gate current, and control dV/dt during switching. Figure 18 in the datasheet specifies RG = 4.7 Ω for switching time characterization, confirming its necessity for stable, low-EMI operation.

Can STP13NM50N be mounted directly to a heatsink without electrical isolation?

No-the TO-220 metal tab is internally connected to the Drain (pin 2). Direct mounting to a grounded heatsink creates a short circuit unless the heatsink is electrically isolated or referenced to the Drain potential. Insulating pads or shoulder washers are mandatory for grounded heatsink use.

STP13NM50N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 320mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 960 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP13NM50N FAQ

1.How can I place an order for STP13NM50N through Aetrix?

Please submit a Request for Quotation (RFQ) for STP13NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP13NM50N reliable?

The price and inventory of STP13NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP13NM50N is usually 5 days.

3.What payment methods are accepted for STP13NM50N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP13NM50N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP13NM50N?

STP13NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP13NM50N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP13NM50N?

For technical support, including STP13NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP13NM50N requirements.

6.How does Aetrix verify that STP13NM50N is sourced from the original manufacturer or authorized distributors?

All STP13NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP13NM50N meets industry standards.

7.What is the process for return or replacement of STP13NM50N?

All STP13NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STP13NM50N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP13NM50N part is unused and in its original packaging.

Return procedure for STP13NM50N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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