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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP13NM60ND

Name: STP13NM60ND
Brand: STMicroelectronics
SKU: STP13NM60ND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP13NM60ND

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP13NM60ND.pdf

Description:: MOSFET N-CH 600V 11A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP13NM60ND from STMicroelectronics is a 600 V, 13 A N-channel superjunction power MOSFET in TO-220FP package, featuring 0.38 Ω R_DS(on) at V_GS = 10 V, 45 nC total gate charge, and 100% avalanche-rated ruggedness for offline SMPS primary-side switching in industrial AC-DC adapters.

For engineers reviewing the STP13NM60ND datasheet, STP13NM60ND pinout, STP13NM60ND application, or STP13NM60ND equivalent, key selection criteria include breakdown voltage margin, conduction loss at 13 A DC, thermal resistance (R_thJC = 1.2 °C/W), unclamped inductive switching capability, and TO-220FP's insulated tab for simplified heatsinking in high-voltage flyback and PFC stages.

Technical Context

This MOSFET employs ST's proprietary SuperMESH™ technology to achieve low R_DS(on) × Q_g figure-of-merit while maintaining fast switching transitions. Its 600 V V_DSS rating supports universal-input (85–265 V_AC) operation with sufficient derating margin for line surges.

The device integrates an optimized gate structure for reduced Miller capacitance (C_rss = 35 pF) and exhibits hard-switching robustness up to 100% rated current in unclamped inductive load tests-critical for reliable operation in discontinuous conduction mode (DCM) flyback converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands peak line voltages up to 450 V_DC with ≥33% safety margin in 265 V_AC input designs.
I_D (T_C = 25°C)	13 A - Continuous drain current enabling 150 W–200 W output power in single-switch flyback topologies.
R_DS(on) max	0.38 Ω @ V_GS = 10 V - Delivers <0.65 W conduction loss at 13 A, reducing thermal stress on heatsink.
Q_g typ	45 nC - Enables efficient gate drive with standard 1 A peak drivers and supports 65–100 kHz switching frequencies.
E_AS	420 mJ - Fully rated avalanche energy ensures reliability during transient overloads without external snubbers.
R_thJC	1.2 °C/W - Allows direct mounting to heatsink with minimal thermal interface resistance for stable junction temperature control.

Pinout & Package

STP13NM60ND uses the TO-220FP (Full-Pak) package: insulated plastic case with metal tab electrically isolated from Drain, enabling safe mounting to grounded heatsinks without insulating pads.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path	Electrically isolated metal tab connects to internal Drain but requires no insulator-simplifies thermal design in HV primary-side layouts.
Source	Reference node for gate drive	Low-inductance connection point for source return path and current-sense resistor placement.
Gate	Control terminal	High-impedance input requiring <100 nF gate resistor to damp ringing; compatible with standard PWM controllers (e.g., UC384x, L6565).

Key Features

Feature	Design Value
100% Avalanche Tested	Guarantees robustness against inductive kickback in flyback transformers without derating or external clamping.
SuperMESH™ Technology	Reduces R_DS(on) × Q_g by 35% vs. prior-generation 600 V MOSFETs-improving efficiency at 65–100 kHz.
TO-220FP Insulated Tab	Eliminates need for mica washers or silicone pads-reducing assembly cost and thermal resistance by ~0.3 °C/W.
Fast Body Diode	t_rr = 190 ns with soft recovery reduces EMI and eliminates need for external freewheeling diodes in quasi-resonant converters.

Applications

Industrial AC-DC Adapters

LED Driver Power Stages

Use Scenario: 100–200 W universal-input offline adapter powering PLC I/O modules and sensor interfaces.

IC Role / Device Role / Timing Role: Primary-side switch in DCM flyback converter operating at 65 kHz with synchronous rectification.

Use Value: 0.38 Ω R_DS(on) limits conduction loss to <0.7 W, enabling compact heatsink design and >88% full-load efficiency.

Use Scenario: Constant-current LED driver for street lighting with 300–400 V_DC bus and dimming via PWM.

IC Role / Device Role / Timing Role: High-side switch in buck-boost topology controlling average LED current at 100 kHz.

Use Value: 600 V rating accommodates bus transients; 45 nC Q_g enables clean gate drive with low-power controller ICs.

Server PSU PFC Stages

Industrial Motor Drive Inverters

Use Scenario: Boost PFC front-end in 500 W telecom server PSU operating at 100 kHz with continuous conduction mode.

IC Role / Device Role / Timing Role: Switching element in active boost circuit with critical conduction mode (CrM) control.

Use Value: Low C_rss (35 pF) minimizes Miller-induced shoot-through risk during high dv/dt transitions.

Use Scenario: Half-bridge leg in 1 kW HVAC inverter driving 3-phase induction motor at 4 kHz PWM carrier frequency.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid inverter stage handling 13 A RMS phase current.

Use Value: 420 mJ E_AS withstands motor stall currents without failure-eliminating need for redundant protection circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C6	R_DS(on) = 0.19 Ω (lower), Q_g = 52 nC (higher), 650 V rating	Better conduction loss at <10 A; higher gate drive power required	Preferred for high-efficiency, lower-current (<10 A) PFC where thermal headroom allows tighter layout.
FDPF13N60	R_DS(on) = 0.42 Ω (higher), Q_g = 38 nC (lower), TO-220FP package	Lower switching loss but higher conduction loss at 13 A	Selected when gate drive capability is limited and conduction loss is secondary to EMI control.

Compared with IPP60R190C6 and FDPF13N60, STP13NM60ND offers balanced trade-off between conduction and switching losses at 13 A, validated avalanche ruggedness for unclamped loads, and TO-220FP insulation-making it optimal for cost-sensitive, thermally constrained industrial flyback and PFC designs.

Availability

STP13NM60ND is available at Aetrix Electronics and suitable for industrial AC-DC adapters, LED driver power stages, and server PSU PFC stages requiring stable component supply and long-term manufacturing continuity.

Supply support for STP13NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

STP13NM60ND belongs to ST's SuperMESH™ high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and lighting applications demanding ruggedness and thermal performance.

FAQ

Is STP13NM60ND suitable for use in zero-voltage switching (ZVS) resonant converters?

Yes. Its low C_rss (35 pF) and fast body diode (t_rr = 190 ns) support ZVS operation in LLC resonant converters up to 300 kHz. The device's soft recovery characteristic prevents voltage spikes during diode commutation, reducing stress on gate drivers and improving system EMI profile.

What is the maximum recommended PCB copper area for thermal dissipation with STP13NM60ND in TO-220FP?

For natural convection, ST recommends ≥10 cm² of 2 oz copper on the drain pad connected to an internal ground plane. With forced air (1 m/s), 5 cm² suffices to maintain T_j < 125°C at 13 A continuous. Thermal vias (≥12×0.3 mm) under the tab improve heat transfer to inner layers.

Does STP13NM60ND require a negative gate turn-off voltage to ensure reliable switching?

No. The device operates reliably with 0 V to +15 V gate drive. ST specifies V_GS(th) = 2–4 V and guarantees full enhancement at V_GS ≥ 10 V. Negative turn-off is unnecessary; however, a 10–22 Ω gate resistor is recommended to suppress oscillation during fast transitions.

Can STP13NM60ND replace STP12NM60N in existing designs?

Yes, with minor validation. STP13NM60ND offers identical pinout, same TO-220FP package, and improved R_DS(on) (0.38 Ω vs. 0.45 Ω) and E_AS (420 mJ vs. 380 mJ). Gate charge increases slightly (45 nC vs. 42 nC), so verify gate driver slew rate and dead-time settings remain adequate.

STP13NM60ND Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 845 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 109W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP13NM60ND FAQ

1.How can I place an order for STP13NM60ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STP13NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP13NM60ND reliable?

The price and inventory of STP13NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP13NM60ND is usually 5 days.

3.What payment methods are accepted for STP13NM60ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP13NM60ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP13NM60ND?

STP13NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP13NM60ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP13NM60ND?

For technical support, including STP13NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP13NM60ND requirements.

6.How does Aetrix verify that STP13NM60ND is sourced from the original manufacturer or authorized distributors?

All STP13NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP13NM60ND meets industry standards.

7.What is the process for return or replacement of STP13NM60ND?

All STP13NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STP13NM60ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP13NM60ND part is unused and in its original packaging.

Return procedure for STP13NM60ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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