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STMicroelectronics STP140N6F7

Part No.:
STP140N6F7
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixSTP140N6F7.pdf
Description:
MOSFET N-CH 60V 80A TO220
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:27

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Product details

Overview

STP140N6F7 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET using STripFET™ F7 trench technology, designed for high-efficiency switching in power conversion stages. It delivers 60 V VDS, 0.0031 Ω typ. RDS(on) at VGS = 10 V and ID = 40 A, 80 A continuous drain current, 158 W total power dissipation, and 160 mJ single-pulse avalanche energy - deployed in DC-DC converters, motor drives, and industrial SMPS.

For engineers reviewing the STP140N6F7 datasheet, STP140N6F7 pinout, STP140N6F7 application, or STP140N6F7 equivalent, key selection criteria include its low Crss/Ciss ratio for EMI immunity, high junction temperature rating (175 °C), TO-220 package thermal resistance (0.95 °C/W), and verified unclamped inductive switching ruggedness.

Technical Context

This MOSFET employs an enhanced trench gate structure that reduces both RDS(on) and gate charge (Qg = 55 nC typ.), enabling fast switching with minimal conduction and switching losses. Its low Crss (193 pF) relative to Ciss (3100 pF) improves noise immunity during high-dV/dt transitions.

The device operates with a gate threshold voltage of 2–4 V, supports ±20 V gate drive, and maintains stable on-resistance up to 125 °C case temperature. Its source-drain diode exhibits 1.2 V forward voltage at 80 A and 42.4 ns reverse recovery time under defined inductive load conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - maximum blocking voltage for 48 V bus-level applications
RDS(on) typ.0.0031 Ω at VGS = 10 V, ID = 40 A - enables <100 mW conduction loss at 80 A
ID cont.80 A at Tcase = 25 °C - limited by TO-220 package thermal capacity
EAS160 mJ - supports robust unclamped inductive switching without failure
Crss/Ciss193/3100 pF - low ratio minimizes Miller-induced turn-on risk in hard-switched topologies
Qg55 nC - reduces gate driver power requirement and switching transition time
Rthj-case0.95 °C/W - allows 158 W dissipation with ≤150 °C junction-to-case delta

Pinout & Package

STP140N6F7 is housed in a standard TO-220 type A package with isolated tab (drain-connected). The package features a metal tab for heatsinking, 3 leads, and RoHS-compliant ECOPACK® construction.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current path output / heatsink interfaceElectrically connected to metal tab; requires insulating washer if mounted to grounded heatsink
SourceReference node for gate drive and current returnLow-inductance connection critical for minimizing shoot-through risk in half-bridge configurations
GateControl terminal for channel modulationHigh-impedance input requiring <55 nC charge for full enhancement; sensitive to ESD

Key Features

FeatureDesign Value
Ultra-low RDS(on)0.0031 Ω typ. enables >98% efficiency in 48 V/80 A synchronous rectifier stages
Low Crss/Ciss ratio6.2% ratio suppresses false turn-on during high-speed switching in noisy environments
High avalanche ruggedness160 mJ EAS rating validated per JEDEC JESD24-11, supporting reliable operation without snubbers
Enhanced thermal performance0.95 °C/W Rthj-case allows sustained 80 A operation with forced-air cooling at 25 °C ambient

Applications

DC-DC ConvertersMotor Drives

Use Scenario: High-current buck converter in telecom power shelf delivering 12 V @ 60 A from 48 V input.

IC Role / Device Role / Timing Role: Primary synchronous rectifier switch operating at 200 kHz with 50 ns dead-time control.

Use Value: 0.0031 Ω RDS(on) limits conduction loss to 11.2 W, reducing heatsink size by 35% vs. comparable 4 mΩ devices.

Use Scenario: Half-bridge inverter stage driving a 3 kW BLDC motor in HVAC compressor.

IC Role / Device Role / Timing Role: Low-side switching element handling 80 A peak phase current with 10 kHz PWM.

Use Value: 160 mJ EAS withstands inductive kickback during fault conditions without desaturation or latch-up.

Industrial SMPSUPS Output Stage

Use Scenario: Forward converter in 3 kW industrial PSU with active clamp reset.

IC Role / Device Role / Timing Role: Main switch conducting 80 A continuous with 300 ns turn-off delay.

Use Value: 55 nC Qg enables gate drive with 1 A peak current, reducing driver IC cost and board space.

Use Scenario: Inverter output stage in line-interactive UPS converting 48 V battery to 230 V AC.

IC Role / Device Role / Timing Role: High-current switching element in full-bridge topology with bidirectional current capability.

Use Value: 1.2 V VSD at 80 A ensures low forward drop in body diode conduction during dead-time commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRFB4115PBFRDS(on) = 0.0032 Ω, Qg = 120 nC, TO-220AB packageHigher gate charge increases driver loss and slows switching; lower Crss/Ciss ratio (5.8%) but less EAS (120 mJ)Preferable only where gate drive strength exceeds 2 A and avalanche stress is minimal
IXTH80N60L2RDS(on) = 0.0042 Ω, Qg = 48 nC, TO-247 packageHigher RDS(on) raises conduction loss; TO-247 offers better thermal margin but larger footprintSuitable when board layout allows larger package and junction temperature must stay below 150 °C under 100% load

Compared with IRFB4115PBF and IXTH80N60L2, STP140N6F7 provides the lowest RDS(on) × Qg figure of merit (0.171 Ω·nC), optimal for high-frequency, high-current switching where both efficiency and EMI control are critical.

Availability

STP140N6F7 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and industrial SMPS requiring stable component supply and long-term production continuity.

Supply support for STP140N6F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

STP140N6F7 belongs to the STripFET™ F7 power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 48 V infrastructure and industrial power systems.

FAQ

What is the maximum safe operating temperature for STP140N6F7?

The absolute maximum junction temperature is 175 °C, and the storage temperature range is –55 to +175 °C. Operation above 150 °C junction temperature requires derating per the Safe Operating Area (SOA) curves in Figure 2 of the datasheet, with thermal design ensuring Rthj-case ≤ 0.95 °C/W under actual airflow and heatsink conditions.

Is STP140N6F7 suitable for paralleling multiple devices?

Yes - its positive temperature coefficient of RDS(on) (see Figure 10) ensures inherent current sharing when paralleled. Successful implementation requires matched gate drive impedance, symmetrical PCB layout, and identical heatsinking to maintain ΔTj < 5 °C between units for stable load distribution at 80 A total.

Does STP140N6F7 have built-in ESD protection?

No - it lacks integrated gate protection diodes. The gate oxide is rated for ±20 V VGS, and IGSS is specified at 100 nA at VGS = +20 V. External Zener clamps (e.g., 15 V) and series gate resistors are required in production designs to prevent ESD damage during handling and PCB assembly.

Can STP140N6F7 replace older STripFET™ F4 or F5 devices?

Yes - it is a direct upgrade with lower RDS(on) (–22% vs. STP160N6F5), reduced Qg (–18%), and improved EAS (+20%). Pinout and package are identical, allowing drop-in replacement; however, gate drive timing may require minor adjustment due to faster switching transitions and lower Crss.

STP140N6F7 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
55 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3100 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
158W (Tc)
Operating Temperature:
175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220

STP140N6F7 FAQ

1.How can I place an order for STP140N6F7 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP140N6F7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP140N6F7 reliable?

The price and inventory of STP140N6F7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP140N6F7 is usually 5 days.

3.What payment methods are accepted for STP140N6F7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP140N6F7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP140N6F7?

STP140N6F7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP140N6F7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP140N6F7?

For technical support, including STP140N6F7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP140N6F7 requirements.

6.How does Aetrix verify that STP140N6F7 is sourced from the original manufacturer or authorized distributors?

All STP140N6F7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP140N6F7 meets industry standards.

7.What is the process for return or replacement of STP140N6F7?

All STP140N6F7 units undergo pre-shipment inspection (PSI). If there is an issue with STP140N6F7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP140N6F7 part is unused and in its original packaging.

Return procedure for STP140N6F7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STP140N6F7 Tags

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