STMicroelectronics STP140N8F7

Overview

STP140N8F7 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-220 package, rated for 80 V V_DS, 3.5 mΩ typical R_DS(on) at V_GS = 10 V, and 90 A continuous drain current at T_C = 25 °C. It employs STripFET™ F7 trench-gate technology for high-efficiency switching in DC-DC converters and motor control inverters.

For engineers reviewing the STP140N8F7 datasheet, STP140N8F7 pinout, STP140N8F7 application, or STP140N8F7 equivalent, key selection criteria include its low R_DS(on), high avalanche energy (515 mJ), Crss/Ciss ratio optimized for EMI immunity, and thermal resistance of 0.75 °C/W junction-to-case - critical for high-current industrial power stages.

Technical Context

This MOSFET uses a refined trench-gate structure that reduces both R_DS(on) and gate charge (Q_g = 96 nC) while maintaining robust safe operating area up to 360 A pulsed drain current. Its Crss of 105 pF and Ciss of 6340 pF yield a Crss/Ciss ratio of ~1.66%, contributing to stable switching under noisy conditions.

The device features integrated source-drain diode with 1.2 V forward voltage at 90 A and fast reverse recovery (t_rr = 58 ns, Q_rr = 92 nC) at T_j = 150 °C, enabling efficient synchronous rectification and inductive load commutation without external freewheeling diodes.

Key Specifications

Pinout & Package

TO-220 type A package with isolated tab (drain-connected), standard 3-pin vertical mounting configuration. Tab is electrically connected to drain; no internal isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFP4468PbF and IXTH120N075L2, STP140N8F7 delivers optimal balance of low R_DS(on), moderate Q_g, and TO-220 manufacturability - making it preferred for cost-sensitive, space-constrained 48–80 V industrial power stages where thermal management is via bolt-down heatsinks.

Availability

STP140N8F7 is available at Aetrix Electronics and suitable for motor drive inverters, industrial DC-DC converters, uninterruptible power supplies, and automotive battery disconnect switches requiring stable component supply and long-term production continuity.

Supply support for STP140N8F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The STripFET™ F7 product line targets high-efficiency power conversion, emphasizing low R_DS(on), fast switching, and ruggedness in standard packages for motor control, SMPS, and battery-powered systems.

FAQ

What is the maximum safe operating temperature for STP140N8F7?

The STP140N8F7 has a maximum operating junction temperature of 175 °C and storage temperature range of –55 to 175 °C. At T_C = 100 °C, it maintains full 90 A continuous drain current rating. Derating begins above 100 °C case temperature per the SOA curve in Figure 2, and thermal design must ensure R_thj-case ≤ 0.75 °C/W to avoid exceeding T_j limit under full load.

Does STP140N8F7 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 48 V systems switching at 20–50 kHz, a 4.7 Ω resistor is validated in the datasheet (Figure 13). Lower values (2.2–3.3 Ω) improve switching speed but increase EMI risk; higher values (>10 Ω) reduce EMI but raise switching losses. Layout parasitics and driver capability must be considered alongside this value.

Can STP140N8F7 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (see Figure 11) enables stable current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors. The datasheet confirms stable operation up to 360 A pulsed current, supporting multi-device designs for >100 A applications when thermal and layout constraints are addressed.

Is the TO-220 tab electrically isolated, and how should it be mounted?

No - the TO-220 tab is internally connected to the drain terminal and is not electrically isolated. When mounting to a heatsink, use insulating hardware (e.g., silicone washer + nylon shoulder washer) if the heatsink is grounded or at a different potential. Thermal paste must be applied between tab and heatsink surface; mechanical torque must comply with ST's 0.5–0.8 N·m specification to ensure contact without cracking the package.