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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP14N80K5

Name: STP14N80K5
Brand: STMicroelectronics
SKU: STP14N80K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP14N80K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP14N80K5.pdf

Description:: MOSFET N-CHANNEL 800V 12A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:9,680

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Product details

Overview

STP14N80K5 from STMicroelectronics is an N-channel 800 V, 12 A high-voltage Power MOSFET in TO-220 package, fabricated with MDmesh K5 vertical structure. It delivers 445 mΩ max R_DS(on), 22 nC total gate charge, and 100% avalanche-tested ruggedness for high-efficiency switching in offline SMPS and industrial inverters.

For engineers reviewing the STP14N80K5 datasheet, STP14N80K5 pinout, STP14N80K5 application, or STP14N80K5 equivalent, key selection criteria include its ultra-low FoM (R_DS(on) × Q_g = 9.8 Ω·nC), Zener-protected gate, 270 mJ single-pulse avalanche energy, and 4.5 V/ns diode recovery dv/dt rating.

Technical Context

This device implements ST's MDmesh K5 technology-a proprietary vertical superjunction architecture that reduces specific on-resistance by ~30% versus prior K3/K4 generations while maintaining 800 V breakdown. Its low C_iss (620 pF typ.) and minimized Q_gd/Q_gs ratio (16.5 nC / 4.3 nC) enable fast, low-loss hard-switching up to 100 kHz.

The integrated body diode features 365 ns reverse recovery time (T_J = 25 °C) and 4.77 µC Q_rr, with soft recovery characteristics confirmed under 100 A/µs di/dt. Thermal resistance R_thJC is 0.96 °C/W, supporting 130 W continuous dissipation at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Withstands full mains rectified voltage in 400 V AC input systems without derating.
R_DS(on) max	445 mΩ @ V_GS = 10 V, I_D = 6 A - Enables <1.5 W conduction loss at 12 A DC in TO-220 heatsinked designs.
Q_g	22 nC - Reduces gate drive power and enables use of low-current drivers (e.g., 1 A peak) in high-frequency PFC stages.
E_AS	270 mJ - Supports unclamped inductive switching in motor drives without external snubbers.
dv/dt ruggedness	50 V/ns - Ensures reliable operation during fast voltage transients in bridge-leg configurations.
T_J range	–55 to 150 °C - Validated for industrial ambient environments including enclosed power supplies and solar inverters.

Pinout & Package

TO-220 package with isolated tab (drain-connected). Standard through-hole mounting; tab electrically connected to Drain for direct heatsink coupling and thermal path optimization.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control terminal; requires ≤±30 V bias; 6.5 Ω intrinsic gate resistance limits ringing.
2 (TAB)	Drain	Exposed metal tab tied internally to Drain; provides primary thermal path and high-current return path.
3 (S)	Source	Reference node for gate drive; carries full load current (12 A continuous); used for current sensing.

Key Features

Feature	Design Value
MDmesh K5 vertical structure	Reduces R_DS(on) × Q_g FoM to 9.8 Ω·nC-enabling higher power density than K3-generation equivalents.
Zener-protected gate	Integrated gate oxide protection clamps transients to ±30 V, eliminating need for external gate Zener in noisy industrial environments.
100% avalanche tested	Every unit validated for 4 A repetitive avalanche current and 270 mJ single-pulse energy-ensuring robustness in inductive fault conditions.
Ultra-low Q_gd/Q_gs ratio	3.8:1 (16.5 nC / 4.3 nC) minimizes Miller-induced turn-off delay and improves hard-switching EMI profile.

Applications

Industrial Motor Drives

Server PSU Active Clamp Circuits

Use Scenario: Half-bridge leg in 3 kW servo drive operating at 50 kHz with 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switching element handling 12 A RMS load current and absorbing inductive flyback energy.

Use Value: 270 mJ E_AS and 50 V/ns dv/dt ruggedness eliminate need for external RCD snubber, reducing BOM count and layout area.

Use Scenario: Clamp switch in active-clamp forward converter for 1U server power supply.

IC Role / Device Role / Timing Role: Synchronized clamp FET conducting during transformer reset phase with 100 ns turn-off timing precision.

Use Value: 22 nC Q_g and 12.5 ns t_d(on) support precise gate timing control and minimize clamp loss at 300 kHz switching.

Photovoltaic String Inverters

Offline LED Driver Ballasts

Use Scenario: DC-DC boost stage in 1.5 kW string inverter interfacing 600–1000 V PV arrays.

IC Role / Device Role / Timing Role: Main switching transistor in interleaved boost converter with 100 kHz PWM and 800 V blocking requirement.

Use Value: 800 V V_DS rating and 445 mΩ R_DS(on) allow direct interface to high-voltage PV strings without series stacking.

Use Scenario: Primary-side switch in 150 W constant-current LED driver for street lighting.

IC Role / Device Role / Timing Role: Hard-switched flyback controller delivering 1.2 A output with universal 90–305 V AC input.

Use Value: 1.5 V V_SD body diode forward drop and 365 ns t_rr reduce conduction loss and EMI during discontinuous conduction mode transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099C7	650 V rating, 99 mΩ R_DS(on), 33 nC Q_g, TO-220FP package	Limited to 380 V AC input systems; higher conduction loss at 800 V blocking voltage	Select only when system DC bus ≤ 550 V and lower R_DS(on) outweighs voltage margin loss.
STW20N80K5	Same MDmesh K5 process, 20 A rating, 300 mΩ R_DS(on), TO-247 package	Higher current capability but larger footprint and cost; no TO-220 drop-in compatibility	Choose when >12 A continuous current or >150 W dissipation is required and board space permits TO-247.

Compared with IPP60R099C7 and STW20N80K5, STP14N80K5 uniquely balances 800 V isolation, TO-220 thermal performance, and FoM-optimized switching for cost-sensitive 1–3 kW industrial converters where voltage margin and package standardization are critical.

Availability

STP14N80K5 is available at Aetrix Electronics and suitable for industrial motor drives, photovoltaic inverters, and offline LED ballasts requiring stable component supply and long-term manufacturability.

Supply support for STP14N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STP14N80K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline switching applications demanding superior avalanche ruggedness and low gate charge.

FAQ

Is STP14N80K5 suitable for zero-voltage switching (ZVS) topologies?

Yes-its low Q_gd (16.5 nC) and optimized C_oss (60 pF) enable reliable ZVS operation in LLC resonant converters up to 300 kHz. The 100% avalanche-tested construction ensures robustness during transient resonance mismatches, and the 0.96 °C/W R_thJC supports sustained ZVS efficiency gains without thermal runaway.

What is the maximum recommended gate resistor value for hard-switching at 100 kHz?

A gate resistor of 10 Ω is recommended for 100 kHz hard-switching with a 1 A peak gate driver. This value balances turn-on speed (12.5 ns t_d(on)) against overshoot suppression, given the device's 6.5 Ω intrinsic R_g and 22 nC Q_g. Values above 22 Ω increase switching losses disproportionately due to extended Miller plateau duration.

Does the TO-220 tab require electrical isolation from the heatsink?

No-the tab is internally connected to Drain and must be electrically bonded to the heatsink. Isolation would compromise thermal performance (R_thJC degrades from 0.96 to >2.5 °C/W with mica insulator). Use conductive thermal paste and ensure heatsink grounding complies with system safety standards for high-voltage drain potential.

How does STP14N80K5's body diode compare to fast-recovery diodes in PFC boost stages?

Its body diode achieves 365 ns t_rr and 4.77 µC Q_rr at 25 °C-comparable to discrete 600 V ultrafast diodes. However, it exhibits softer recovery (lower I_RRM = 26 A) and temperature-stable Q_rr (5.85 µC at 150 °C), reducing EMI and stress on gate drivers in continuous-conduction-mode PFC without requiring a separate diode.

STP14N80K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ K5

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 445mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 620 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 130W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP14N80K5 FAQ

1.How can I place an order for STP14N80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP14N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP14N80K5 reliable?

The price and inventory of STP14N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP14N80K5 is usually 5 days.

3.What payment methods are accepted for STP14N80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP14N80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP14N80K5?

STP14N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP14N80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP14N80K5?

For technical support, including STP14N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP14N80K5 requirements.

6.How does Aetrix verify that STP14N80K5 is sourced from the original manufacturer or authorized distributors?

All STP14N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP14N80K5 meets industry standards.

7.What is the process for return or replacement of STP14N80K5?

All STP14N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STP14N80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP14N80K5 part is unused and in its original packaging.

Return procedure for STP14N80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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