STMicroelectronics STP14NK50ZFP

Overview

STP14NK50ZFP from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 500 V drain-source voltage, 340 mΩ typical R_DS(on), and 14 A continuous drain current at T_C = 25 °C, housed in a TO-220FP package with insulated tab. It delivers high dv/dt immunity (4.5 V/ns), 100% avalanche tested ruggedness (E_AS = 400 mJ), and minimized gate charge (Q_g = 69 nC typ.) for hard-switching in offline SMPS and AC-DC adapters.

For engineers reviewing the STP14NK50ZFP datasheet, STP14NK50ZFP pinout, STP14NK50ZFP application, or STP14NK50ZFP equivalent, key selection criteria include its 500 V blocking capability, TO-220FP's 2.5 kV RMS insulation rating, 3.6 °C/W junction-to-case thermal resistance, and Zener-protected gate for ESD robustness in high-noise industrial power stages.

Technical Context

This device implements ST's SuperMESH process - an optimized evolution of PowerMESH - to simultaneously reduce R_DS(on) and enhance dynamic ruggedness. Its 4.5 V/ns peak diode recovery dv/dt rating and 12 A repetitive avalanche current are validated under strict unclamped inductive load conditions (I_SD ≤ 13 A, di/dt ≤ 200 A/μs).

The TO-220FP package provides electrical isolation between the drain-connected tab and mounting surface (V_ISO = 2.5 kV RMS), enabling direct heatsink mounting without insulating hardware. Gate threshold voltage is tightly distributed (3.0–4.5 V), supporting reliable turn-on with standard 10 V gate drivers while maintaining low leakage (I_DSS ≤ 1 µA at 500 V).

Key Specifications

Pinout & Package

STP14NK50ZFP uses the TO-220FP (Type B) package: a 3-pin, through-hole, full-packaged variant with electrically insulated drain tab. The plastic body fully encapsulates leads and provides creepage/clearance compliance for reinforced insulation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STW14NK50Z and FDPF14N50, STP14NK50ZFP uniquely combines certified avalanche ruggedness, integrated gate protection, and reinforced insulation - making it the only choice for cost-sensitive, safety-critical 100–250 W industrial power supplies requiring UL/EN 62368-1 compliance.

Availability

STP14NK50ZFP is available at Aetrix Electronics and suitable for AC-DC adapters, industrial flyback converters, LED streetlight drivers, and motor starter circuits requiring stable component supply and long-term industrial lifecycle support.

Supply support for STP14NK50ZFP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This MOSFET belongs to ST's SuperMESH Power MOSFET product line - engineered specifically for high-efficiency, high-reliability offline switching applications where avalanche capability, dv/dt immunity, and gate robustness are non-negotiable.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP14NK50ZFP supports 7.6 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 1 of DS2637 Rev 4. This derating reflects thermal limits imposed by the TO-220FP package's 3.6 °C/W junction-to-case resistance and 150 °C maximum junction temperature.

Does STP14NK50ZFP require external gate protection?

No - the device integrates bidirectional Zener clamping between gate and source, rated for ±20 V, and passes 4 kV human-body-model ESD testing. External gate resistors (≥10 Ω) are still recommended for ringing suppression, but discrete Zener diodes are unnecessary for standard PCB layouts.

Can STP14NK50ZFP be mounted directly to a grounded metal heatsink?

Yes - the TO-220FP package features an electrically insulated drain tab rated for 2.5 kV RMS isolation (per Table 1). This allows direct mechanical attachment to grounded heatsinks without insulating hardware, reducing thermal interface resistance and assembly cost.

How does its avalanche energy rating compare to STP16NF50?

STP14NK50ZFP delivers 400 mJ single-pulse avalanche energy (E_AS), whereas STP16NF50 (older planar process) is rated at 250 mJ. This 60% higher energy handling stems from SuperMESH cell structure optimization, enabling more robust operation in unclamped inductive switching without snubber networks.