STMicroelectronics STP14NM50N

Overview

STP14NM50N from STMicroelectronics is an N-channel 500 V, 285 mΩ (typ.) MDmesh™ II Power MOSFET in TO-220 package, rated for 12 A continuous drain current at 25 °C and 8 A at 100 °C, with 27 nC total gate charge and 100% avalanche tested - deployed in high-efficiency AC-DC flyback and PFC converters.

For engineers reviewing the STP14NM50N datasheet, STP14NM50N pinout, STP14NM50N application, or STP14NM50N equivalent, key selection criteria include R_DS(on) stability over temperature, unclamped inductive switching robustness, diode reverse recovery performance (Q_rr = 2.8–3.3 µC), and thermal resistance (R_thJC = 1.39 °C/W) for heatsink-limited industrial power designs.

Technical Context

This device implements ST's second-generation MDmesh vertical strip architecture to minimize conduction loss and switching energy simultaneously. Its low C_iss (816 pF) and Cr_ss (3 pF) enable fast, low-loss hard-switching up to 100 kHz in offline SMPS topologies.

The integrated body diode exhibits 252–300 ns reverse recovery time (trr) and 22–22.2 A peak recovery current (I_RRM) under standardized inductive load conditions, supporting quasi-resonant and transition-mode operation without external snubbing in many cases.

Key Specifications

Pinout & Package

STP14NM50N is housed in a TO-220 (Type A) through-hole package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulating hardware when mounted to grounded heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R190C6 and IRFP460, STP14NM50N delivers superior avalanche ruggedness and lower gate charge for high-frequency flyback/PFC, while maintaining competitive R_DS(on) and proven thermal performance in TO-220 mounting configurations.

Availability

STP14NM50N is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server/telecom rectification, and motor drive inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STP14NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STP14NM50N belongs to the MDmesh™ II high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline SMPS and industrial motor control applications demanding low R_DS(on), fast switching, and robust avalanche capability.

FAQ

What is the maximum safe operating temperature for STP14NM50N?

The STP14NM50N has a specified junction temperature range of –55 °C to 150 °C. Continuous operation above 150 °C risks permanent degradation of the silicon die and bond wires. Thermal design must ensure T_J stays below this limit under worst-case ambient, power dissipation, and heatsink conditions - typically verified using R_thJC = 1.39 °C/W and R_thJA = 62.5 °C/W values from the datasheet.

Does STP14NM50N require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt, suppress oscillation, and limit peak gate current. For typical 12 A switching at 100 kHz with a 10 V gate drive, a 4.7 Ω resistor is validated in the datasheet test circuit (Figure 14). Lower values (2.2–4.7 Ω) improve switching speed but increase EMI; higher values (10–22 Ω) reduce ringing at the cost of increased switching loss.

Can STP14NM50N replace STF14NM50N in existing designs?

Yes, with mechanical and thermal caveats: both share identical electrical specs and marking (14NM50N), but STP14NM50N uses TO-220 (Type A) while STF14NM50N uses TO-220FP (Type B). The TO-220FP has lower R_thJC (5 °C/W) but smaller footprint; TO-220 offers better thermal performance (1.39 °C/W) but larger mounting area. Heatsink interface and PCB layout must be revalidated.

Is the body diode in STP14NM50N suitable for synchronous rectification?

No - the integrated body diode is not optimized for synchronous rectification. Its Q_rr (2.8–3.3 µC) and trr (252–300 ns) are significantly higher than dedicated SR MOSFETs, causing excessive reverse recovery loss and EMI. For synchronous rectification, use a logic-level N-channel MOSFET with ultra-low Q_rr and dedicated SR controller, not STP14NM50N.