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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP14NM65N

Name: STP14NM65N
Brand: STMicroelectronics
SKU: STP14NM65N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP14NM65N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP14NM65N.pdf

Description:: MOSFET N-CH 650V 12A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:4,643

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Product details

Overview

STP14NM65N from STMicroelectronics is an N-channel 650 V, 0.33 Ω (typ), 12 A MDmesh™ II Power MOSFET in TO-220 package, designed for high-efficiency switching converters operating at high voltage and moderate current. It features 100% avalanche tested ruggedness, low gate charge (45 nC), and low input capacitance (1300 pF), enabling fast switching in PFC and SMPS stages.

For engineers reviewing the STP14NM65N datasheet, STP14NM65N pinout, STP14NM65N application, or STP14NM65N equivalent, key selection criteria include R_DS(on) stability over temperature, unclamped inductive switching capability (E_AS = 300 mJ), diode reverse recovery performance (t_rr = 390 ns @ 25°C), and thermal resistance (R_thj-case = 1.0 °C/W).

Technical Context

This device implements ST's second-generation MDmesh™ vertical superjunction architecture with strip layout, delivering optimized trade-off between conduction loss (R_DS(on) = 0.33 Ω @ V_GS = 10 V) and switching loss (Q_g = 45 nC, C_iss = 1300 pF). Its gate threshold voltage (V_GS(th) = 2–4 V) ensures reliable turn-on with standard 10 V gate drivers.

The integrated source-drain diode supports synchronous rectification and flyback operation, with characterized reverse recovery (Q_rr = 5 µC, I_RRM = 25 A) and dv/dt immunity (15 V/ns rated, 30 V/ns measured). Junction temperature is rated to 150 °C, with SOA validated up to 48 A pulsed drain current.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Withstands DC bus voltages up to 400 VAC rectified systems with margin for transients.
R_DS(on) max	0.38 Ω - Ensures ≤ 5.5 W conduction loss at 12 A continuous drain current (T_C = 25°C).
Q_g	45 nC - Enables efficient 100–300 kHz switching with <1 W gate drive power using 10 V logic-level drivers.
E_AS	300 mJ - Supports robust unclamped inductive switching in PFC and LLC resonant converters without external snubbers.
t_rr	390 ns - Minimizes diode recovery loss and EMI in hard-switched topologies like boost and flyback.
R_thj-case	1.0 °C/W - Allows 125 W dissipation with 125°C ΔT to heatsink, supporting compact thermal design in TO-220 footprint.
I_D (pulsed)	48 A - Supports peak current demands in overload and startup conditions without SOA violation.

Pinout & Package

STP14NM65N uses a standard TO-220 package with three leads: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain terminal and must be insulated from heatsink unless system ground reference permits direct connection.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main high-side current path	Electrically tied to internal drain structure; requires isolation pad or conductive thermal interface depending on PCB grounding scheme.
Pin 1	Source	Reference node for gate drive and current sensing; connects directly to power ground plane in most half-bridge configurations.
Pin 2	Gate	High-impedance control input; requires low-inductance routing and gate resistor (typically 4.7 Ω) to damp ringing and control dV/dt.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse energy handling up to 300 mJ without parameter shift or failure-critical for PFC stage reliability.
Low Q_g/C_iss ratio	45 nC / 1300 pF = 34.6 V - Reduces Miller effect and improves controllability during high-dV/dt transitions.
MDmesh™ II vertical structure	Delivers 30% lower R_DS(on) × Q_g figure-of-merit vs. first-gen superjunction MOSFETs-enabling higher efficiency at 200–500 kHz.
ECOPACK® lead-free packaging	Complies with RoHS and JEDEC JESD97; marked with lead-free second-level interconnect symbol on package and inner box label.

Applications

Industrial Motor Drives

Server PSU PFC Stages

Use Scenario: Input rectification and boost-stage switching in 1–3 kW industrial variable-frequency drives.

IC Role / Device Role / Timing Role: High-voltage switch in continuous conduction mode (CCM) boost converter controlling AC line input to 400 VDC bus.

Use Value: Low R_DS(on) minimizes conduction loss at 12 A RMS; 150 °C junction rating sustains operation under forced-air cooling at 60°C ambient.

Use Scenario: Active PFC front-end in redundant 80 PLUS Titanium server power supplies.

IC Role / Device Role / Timing Role: Main switching element in interleaved boost PFC with 100–200 kHz switching frequency.

Use Value: 45 nC Q_g enables low gate-drive loss; 300 mJ E_AS withstands inrush and fault transients without derating.

Solar Microinverters

EV Onboard Chargers

Use Scenario: DC-DC isolation stage and MPPT boost switch in single-phase 300–600 W photovoltaic microinverters.

IC Role / Device Role / Timing Role: High-side switch in non-isolated boost converter stepping panel voltage (30–60 V) to 400 VDC link.

Use Value: Fast t_rr (390 ns) reduces diode recovery loss; low C_oss (90 pF) improves light-load efficiency via ZVS capability.

Use Scenario: Primary-side switch in 3.3–6.6 kW bidirectional OBCs converting AC grid to battery DC (or vice versa).

IC Role / Device Role / Timing Role: Hard-switched or quasi-resonant switch in dual-active-bridge (DAB) or CLLC topology.

Use Value: 650 V rating covers 400 V nominal battery + 50% transient margin; 1.0 °C/W R_thj-case supports compact heatsink integration in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW14NM65N	Same die, TO-247 package; R_thj-case = 0.42 °C/W vs. 1.0 °C/W (TO-220); higher pulse current rating (48 A same, but better thermal headroom).	Better suited for >200 W continuous conduction or forced-convection designs where heatsink space allows larger package.	Select when thermal budget is tight and board area permits TO-247 mounting.
FDPF14N65NZ	ON Semiconductor 650 V MOSFET; R_DS(on) = 0.34 Ω, Q_g = 48 nC, E_AS not specified; no 100% avalanche test guarantee.	Lacks documented avalanche ruggedness; requires additional SOA validation for unclamped inductive loads.	Select only if cost sensitivity outweighs need for guaranteed avalanche performance in safety-critical PFC stages.

Compared with STW14NM65N, STP14NM65N trades thermal performance for lower profile and compatibility with legacy TO-220 heatsinks; compared with FDPF14N65NZ, it offers verified avalanche robustness and tighter R_DS(on) distribution-critical for production consistency in industrial power supplies.

Availability

STP14NM65N is available at Aetrix Electronics and suitable for industrial motor drives, server PSU PFC stages, solar microinverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for STP14NM65N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete power devices, and MEMS sensors for industrial, automotive, and consumer markets.

STP14NM65N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching applications including PFC, SMPS, and motor control-where low R_DS(on) × Q_g FoM and avalanche ruggedness are mandatory.

FAQ

Is STP14NM65N suitable for zero-voltage switching (ZVS) topologies?

Yes. Its low output capacitance (C_oss = 90 pF) and controlled Q_gd/Q_gs ratio enable reliable ZVS in resonant LLC and phase-shifted full-bridge converters operating up to 300 kHz. Measured C_oss eq = 150 pF at 0–520 V confirms predictable soft-switching behavior.

What is the maximum recommended gate resistor value for hard-switched PFC operation?

For 100–200 kHz PFC operation with 10 V gate drive, ST recommends R_G = 4.7 Ω (as tested in Figure 18). Values above 10 Ω increase switching time and losses; below 2.2 Ω risk gate oscillation due to layout inductance and Miller feedback.

Does STP14NM65N require a negative gate turn-off voltage?

No. Its gate threshold voltage (2–4 V) and low gate leakage (<100 nA) allow safe operation with 0 V turn-off. Negative bias is unnecessary and not recommended-standard 0 V/10 V gate drive suffices for all rated conditions.

Can STP14NM65N replace STP12NM60ND in existing designs?

No. STP12NM60ND is a 600 V, 0.42 Ω, 12 A device with different SOA, avalanche rating, and dynamic parameters. STP14NM65N has higher V_DSS, lower R_DS(on), and superior Q_g, but requires revalidation of gate drive strength, thermal layout, and SOA margins due to differing dv/dt and E_AS characteristics.

STP14NM65N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP14NM65N FAQ

1.How can I place an order for STP14NM65N through Aetrix?

Please submit a Request for Quotation (RFQ) for STP14NM65N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP14NM65N reliable?

The price and inventory of STP14NM65N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP14NM65N is usually 5 days.

3.What payment methods are accepted for STP14NM65N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP14NM65N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP14NM65N?

STP14NM65N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP14NM65N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP14NM65N?

For technical support, including STP14NM65N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP14NM65N requirements.

6.How does Aetrix verify that STP14NM65N is sourced from the original manufacturer or authorized distributors?

All STP14NM65N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP14NM65N meets industry standards.

7.What is the process for return or replacement of STP14NM65N?

All STP14NM65N units undergo pre-shipment inspection (PSI). If there is an issue with STP14NM65N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP14NM65N part is unused and in its original packaging.

Return procedure for STP14NM65N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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