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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP150N10F7

Name: STP150N10F7
Brand: STMicroelectronics
SKU: STP150N10F7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP150N10F7

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP150N10F7.pdf

Description:: MOSFET N-CH 100V 110A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP150N10F7 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-220 package, rated for 100 V drain-source voltage, 0.0036 Ω typ. R_DS(on) at V_GS = 10 V and I_D = 55 A, 110 A continuous drain current, and 250 W total power dissipation. It delivers high-efficiency switching in DC-DC converters and motor drives.

For engineers reviewing the STP150N10F7 datasheet, STP150N10F7 pinout, STP150N10F7 application, or STP150N10F7 equivalent, key selection criteria include R_DS(on) vs. temperature stability, Cr_ss/C_iss ratio for EMI robustness, single-pulse avalanche energy (495 mJ), gate charge (117 nC), and thermal resistance (0.6 °C/W junction-to-case).

Technical Context

This device employs STripFET™ F7 trench-gate technology to minimize conduction loss while reducing gate charge and output capacitance-enabling fast switching with low switching losses. Its low Cr_ss/C_iss ratio (67/8115 pF) suppresses Miller-induced turn-on during high-dV/dt operation.

The MOSFET supports rugged unclamped inductive switching up to 495 mJ avalanche energy at T_j = 25 °C, ID = 30 A, V_DD = 50 V, and maintains stable V_GS(th) (2.5–4.5 V) and R_DS(on) across −55 to 175 °C junction temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V bus systems with 2× safety margin against transients
R_DS(on) typ.	0.0036 Ω @ V_GS = 10 V, I_D = 55 A - enables <1.1 W conduction loss at 55 A
I_D cont.	110 A @ T_C = 25 °C - suitable for high-current half-bridge legs in industrial inverters
E_AS	495 mJ - withstands repetitive inductive turn-off stress without failure
Q_g	117 nC - determines gate driver power requirement and switching speed trade-off
R_thj-case	0.6 °C/W - requires heatsink interface ≤0.2 °C/W to maintain T_j < 150 °C at full load
C_rss/C_iss	67/8115 pF - low ratio improves noise immunity in high-frequency SMPS

Pinout & Package

STP150N10F7 uses a TO-220 package with standard 3-pin layout: Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source. The metal tab is electrically connected to the Drain terminal and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate control input	Receives 10 V logic-level drive; 47 nC Q_gs requires ≥1 A peak gate driver for <50 ns rise time
Pin 2 (D / Tab)	Drain terminal & thermal interface	Tab is internally bonded to drain; must be isolated from heatsink unless system ground-referenced drain
Pin 3 (S)	Source reference node	Serves as return path for load current and gate drive loop; critical for minimizing switching oscillation

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.0036 Ω typ. reduces conduction loss by >30% vs. prior-generation 100 V MOSFETs at same die size
Low Cr_ss/C_iss ratio	0.0083 - minimizes dv/dt-induced false turn-on in hard-switched topologies
High avalanche ruggedness	495 mJ single-pulse rating allows reliable operation without snubbers in flyback or LLC resonant circuits
Enhanced thermal performance	0.6 °C/W R_thj-case enables 250 W dissipation with modest heatsinking (e.g., 15 cm² aluminum fin)
Wide temperature operation	−55 to +175 °C T_j range supports under-hood automotive and industrial ambient conditions

Applications

Motor Drive Inverter

Server PSU Primary Switch

Use Scenario: 3-phase BLDC inverter for HVAC compressors operating at 20 kHz PWM with 80 A peak phase current.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 6-pack configuration; handles bidirectional current with body diode recovery (t_rr = 70 ns).

Use Value: Low R_DS(on) cuts conduction loss by 1.8 W per device vs. legacy 100 V MOSFETs, improving system efficiency by 0.4% at full load.

Use Scenario: Primary-side switch in 1.5 kW server AC-DC front-end using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: Fast-switching main power switch; operates at 100–250 kHz with 50 V/ns dV/dt stress.

Use Value: Low Cr_ss/C_iss prevents spurious turn-on during high dv/dt transitions, eliminating need for negative gate drive clamping.

Solar Microinverter H-Bridge

Industrial DC-DC Converter

Use Scenario: Full-bridge inverter stage converting 40–60 V PV input to 230 VAC grid output at 50 kHz switching frequency.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch; body diode conducts reverse recovery current during dead-time.

Use Value: 70 ns t_rr and 165 nC Q_rr reduce reverse recovery loss by 35% compared to standard 100 V MOSFETs, lowering thermal stress on heatsink.

Use Scenario: Isolated 48 V to 12 V step-down converter in factory automation PLC power supply.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward topology; subjected to repetitive unclamped inductive spikes.

Use Value: 495 mJ E_AS rating ensures no degradation after >10⁶ cycles of 100 V, 30 A inductive turn-off events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP110N10N3 G	R_DS(on) = 0.0045 Ω (higher), Q_g = 102 nC (lower), E_AS = 390 mJ (lower)	Optimized for higher-frequency SMPS where gate charge dominates loss	Prefer when switching >300 kHz and thermal margin exceeds 15 °C
IRFP4668PBF	R_DS(on) = 0.0032 Ω (lower), Q_g = 145 nC (higher), TO-247 package (larger footprint)	Requires larger PCB area and different heatsink mounting	Choose only if R_DS(on) reduction justifies mechanical redesign and cost increase

Compared with IPP110N10N3 G and IRFP4668PBF, STP150N10F7 offers best balance of ultra-low R_DS(on), moderate Q_g, and proven avalanche ruggedness in TO-220-making it optimal for cost-sensitive, thermally constrained 100 V industrial switching designs.

Availability

STP150N10F7 is available at Aetrix Electronics and suitable for motor drives, server power supplies, solar microinverters, and industrial DC-DC converters requiring stable component supply and long-term production support.

Supply support for STP150N10F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

STP150N10F7 belongs to the STripFET™ F7 power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial motor controls and renewable energy systems where low conduction loss and avalanche robustness are critical.

FAQ

What is the maximum safe operating temperature for STP150N10F7?

The absolute maximum junction temperature is 175 °C, but sustained operation above 150 °C degrades long-term reliability. With R_thj-case = 0.6 °C/W and a typical heatsink R_th = 1.2 °C/W, the device sustains 110 A continuous current only if case temperature remains ≤85 °C-requiring forced-air cooling or large copper pour.

Does STP150N10F7 require a gate resistor for stability?

Yes-a 4.7 Ω gate resistor is specified in the datasheet switching test circuit to damp ringing and limit peak gate current. Omitting it risks overshoot (>15 V), shoot-through in bridge configurations, and accelerated gate oxide wear due to excessive dV/dt stress during turn-on.

Can STP150N10F7 replace STP16NF10 in existing designs?

No-STP16NF10 is a 100 V, 16 A device with R_DS(on) = 0.22 Ω, while STP150N10F7 is rated 110 A with 0.0036 Ω R_DS(on). Direct replacement would cause severe gate drive overload (117 nC vs. 25 nC) and require PCB layout revision for current handling and thermal management.

Is the TO-220 tab electrically isolated in STP150N10F7?

No-the metal tab is internally connected to the Drain terminal. Electrical isolation from the heatsink is mandatory unless the heatsink is referenced to the drain potential. Use of insulating pads or shoulder washers is required in grounded-heatsink configurations to prevent short-circuit failure.

STP150N10F7 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VII

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 55A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 117 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8115 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP150N10F7 FAQ

1.How can I place an order for STP150N10F7 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP150N10F7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP150N10F7 reliable?

The price and inventory of STP150N10F7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP150N10F7 is usually 5 days.

3.What payment methods are accepted for STP150N10F7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP150N10F7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP150N10F7?

STP150N10F7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP150N10F7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP150N10F7?

For technical support, including STP150N10F7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP150N10F7 requirements.

6.How does Aetrix verify that STP150N10F7 is sourced from the original manufacturer or authorized distributors?

All STP150N10F7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP150N10F7 meets industry standards.

7.What is the process for return or replacement of STP150N10F7?

All STP150N10F7 units undergo pre-shipment inspection (PSI). If there is an issue with STP150N10F7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP150N10F7 part is unused and in its original packaging.

Return procedure for STP150N10F7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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