STMicroelectronics STP150N10F7AG

Overview

STP150N10F7AG from STMicroelectronics is an AEC-Q101-qualified N-channel power MOSFET in TO-220 package, rated for 100 V drain-source voltage, 4.2 mΩ max R_DS(on) at 10 V_GS, and 110 A continuous drain current at T_C = 25 °C. It delivers fast switching with 127 nC total gate charge and 60 ns reverse recovery time, targeting high-efficiency automotive power switching.

For engineers reviewing the STP150N10F7AG datasheet, STP150N10F7AG pinout, STP150N10F7AG application, or STP150N10F7AG equivalent, key selection criteria include its 175 °C junction rating, 100% avalanche ruggedness, low C_iss/C_oss ratio (9000/2000 pF), and STripFET F7 trench architecture optimized for motor control and DC-DC conversion.

Technical Context

This MOSFET employs STripFET F7 technology with enhanced trench gate structure to simultaneously minimize R_DS(on) (3.6 mΩ typ.), reduce gate charge (Q_g = 127 nC), and suppress output capacitance (C_oss = 2000 pF), enabling high-frequency operation up to 100 kHz in hard-switched topologies.

Its thermal design supports 0.6 °C/W junction-to-case resistance and 175 °C maximum operating temperature, while the integrated body diode exhibits 1.2 V forward voltage at 110 A and 60 ns reverse recovery time-critical for synchronous rectification and unclamped inductive load handling.

Key Specifications

Pinout & Package

TO-220 type A package with isolated tab (drain-connected), 3-terminal configuration. Mounting requires electrically insulating washer when heatsink is grounded.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP120N10N3 and NTMFS5C673NL, STP150N10F7AG uniquely combines AEC-Q101 compliance, 100 V rating, and TO-220 thermal performance-making it the only option qualified for under-hood 48 V traction ancillary switching with full avalanche assurance.

Availability

STP150N10F7AG is available at Aetrix Electronics and suitable for automotive motor control, on-board chargers, battery protection circuits, and industrial DC bus switching requiring stable component supply across extended temperature and lifecycle demands.

Supply support for STP150N10F7AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STP150N10F7AG belongs to the STripFET F7 automotive power MOSFET product line, engineered specifically for high-reliability 48 V mild-hybrid systems, electric power steering, and battery management where avalanche robustness and thermal endurance are mandatory.

FAQ

Is STP150N10F7AG suitable for synchronous rectification in DC-DC converters?

Yes. Its 1.2 V body diode forward voltage at 110 A and 60 ns reverse recovery time (t_rr) enable efficient synchronous rectification in 48 V–100 V buck and LLC topologies. The low Q_rr (83 nC) minimizes turn-on loss during freewheeling, and the 175 °C junction rating sustains operation under high ambient temperatures typical in server PSUs.

What is the maximum safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the continuous drain current is derated to 75 A per Figure 1 (Safe Operating Area curve). Pulse operation remains limited by R_DS(on) at short durations (<100 µs), while longer pulses (>1 ms) are constrained by thermal resistance (R_thJC = 0.6 °C/W) and junction temperature ceiling of 175 °C.

Does STP150N10F7AG require gate resistors for reliable switching in automotive environments?

Yes. A 4.7 Ω gate resistor is recommended per Figure 12 test circuit to limit dV/dt-induced shoot-through and control switching speed. This value balances EMI suppression (via 37 ns t_d(on) and 68 ns t_d(off)) with gate driver stress, especially critical in noisy 12 V vehicle electrical systems.

How does the STripFET F7 technology improve efficiency over previous generations?

STripFET F7 reduces R_DS(on) × Q_g FoM by 35% versus F6, achieved via deeper trench etching and optimized cell pitch. This yields lower conduction loss at high current and reduced gate drive power-measured as 127 nC Q_g at 10 V_GS, enabling higher frequency operation without proportional increase in switching loss.