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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP150N3LLH6

Name: STP150N3LLH6
Brand: STMicroelectronics
SKU: STP150N3LLH6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP150N3LLH6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP150N3LLH6.pdf

Description:: MOSFET N-CH 30V 80A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP150N3LLH6 from STMicroelectronics is an N-channel 30 V, 80 A Power MOSFET in TO-220 package, featuring 3.3 mΩ R_DS(on) at V_GS = 10 V and 40 A, high avalanche ruggedness (525 mJ E_AS), and low gate charge (40 nC Q_g). It serves as a main switching element in DC-DC converters and motor drive half-bridges where high current density and thermal robustness are required.

For engineers reviewing the STP150N3LLH6 datasheet, STP150N3LLH6 pinout, STP150N3LLH6 application, or STP150N3LLH6 equivalent, key selection criteria include R_DS(on) vs. temperature stability, unclamped inductive switching capability, safe operating area (SOA) limits at T_C = 100 °C, and gate drive compatibility with 4.5 V logic-level controllers.

Technical Context

This MOSFET employs ST's STripFET™ VI DeepGATE™ process, integrating a refined gate structure to minimize R_DS(on) × Q_g figure-of-merit. Its SOA is defined up to 100 °C case temperature with continuous 80 A rating, and it supports unclamped inductive switching with 525 mJ single-pulse avalanche energy at T_j = 25 °C, ID = 40 A, V_DD = 25 V.

The device exhibits low dynamic losses: C_iss = 4040 pF, C_oss = 740 pF, and C_rss = 425 pF at V_DS = 25 V; turn-on delay t_d(on) = 17 ns and fall time t_f = 46 ns under 15 V drive, 40 A load, and 4.7 Ω gate resistor - enabling high-frequency synchronous rectification and PWM motor control.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12–24 V bus applications
R_DS(on) max	3.3 mΩ @ V_GS = 10 V, I_D = 40 A - Enables <1 W conduction loss at 80 A in thermally optimized layouts
I_D continuous	80 A @ T_C = 25 °C and T_C = 100 °C - Sustains full rated current without derating up to 100 °C case temp
E_AS	525 mJ - Withstands single-pulse inductive energy spikes without failure in relay/snubberless designs
Q_g	40 nC - Reduces gate driver power demand and switching transition time in 100–500 kHz SMPS
R_thj-case	1.36 °C/W - Requires ≤ 1.5 K/W total thermal path to maintain T_j ≤ 175 °C at 80 A
V_GS(th)	1.0–2.5 V - Ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIOs

Pinout & Package

STP150N3LLH6 uses TO-220 package (standard through-hole mounting, single heat sink tab). The package features isolated drain tab for direct heatsink attachment and meets ECOPACK® environmental compliance.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return node for load current	Low-inductance connection point for PCB ground plane; ties to source of complementary high-side switch in half-bridge
2 (Gate)	Control input for MOSFET channel	High-impedance node requiring <100 nF local decoupling; sensitive to ringing due to 1.4 Ω gate resistance
3 (Drain)	Main power output terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless system design permits common-drain topology

Key Features

Feature	Design Value
STripFET™ VI DeepGATE™ process	Delivers industry-leading R_DS(on) × Q_g ratio for reduced switching + conduction loss trade-off
High avalanche ruggedness	525 mJ single-pulse E_AS enables elimination of external snubbers in solenoid/relay drivers
Logic-level gate threshold	V_GS(th) down to 1.0 V ensures full enhancement with 3.3 V microcontrollers without level-shifting
Low thermal resistance	R_thj-case = 1.36 °C/W allows 80 A operation with modest heatsinking in industrial motor controls

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Rectifier

Use Scenario: High-current BLDC motor phase leg in e-bike controller with 24 V nominal bus and 100 A peak load.

IC Role / Device Role / Timing Role: Low-side switching element in 20–50 kHz PWM-driven half-bridge; handles bidirectional freewheeling current via body diode.

Use Value: 3.3 mΩ R_DS(on) limits conduction loss to <21 W at 80 A, while 525 mJ E_AS withstands back-EMF transients during abrupt current interruption.

Use Scenario: Secondary-side synchronous rectifier in 300 W telecom DC-DC module with 48 V input and 12 V output.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; driven by transformer-coupled gate signal synchronized to primary-side switching.

Use Value: 40 nC Q_g and fast 46 ns fall time enable efficient operation at 300 kHz, reducing rectifier loss by >40% versus 40 V Schottky.

Industrial Solid-State Relay

Hot-Swap Controller Back-End Switch

Use Scenario: 30 A AC/DC load switch in programmable logic controller (PLC) output module with zero-cross detection disabled.

IC Role / Device Role / Timing Role: Main power switch isolating 24 V DC field loads; subjected to repeated inductive turn-off stress.

Use Value: Avalanche-rated construction eliminates need for external TVS/clamp, simplifying BOM and improving MTBF in factory automation environments.

Use Scenario: Output stage switch in 12 V hot-swap controller protecting server backplane from insertion surge and short-circuit faults.

IC Role / Device Role / Timing Role: Current-limiting pass element controlled by external current-sense amplifier and comparator.

Use Value: 80 A continuous rating and 320 A pulsed capability support 2× inrush current handling; 1.36 °C/W R_thj-case enables precise thermal foldback without external sensor.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 4.0 mΩ @ 10 V, Q_g = 131 nC, E_AS = 390 mJ	Higher switching loss and lower avalanche margin than STP150N3LLH6	Prefer when legacy footprint compatibility outweighs efficiency gain
IXTP150N04T	R_DS(on) = 3.2 mΩ @ 10 V, Q_g = 65 nC, E_AS = 420 mJ, TO-220AB package	Higher Q_g increases gate drive burden; slightly better R_DS(on) but lower avalanche rating	Select if higher V_DS margin (40 V) is prioritized over SOA robustness

Compared with IRF1404PBF and IXTP150N04T, STP150N3LLH6 offers the lowest R_DS(on) × Q_g product and highest E_AS, making it optimal for thermally constrained, high-reliability 30 V switching where avalanche immunity and gate drive efficiency are critical.

Availability

STP150N3LLH6 is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, solid-state relays, and hot-swap controllers requiring stable component supply and long-term industrial lifecycle support.

Supply support for STP150N3LLH6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in industrial motor control, power supplies, and energy infrastructure systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP150N3LLH6 supports 80 A continuous drain current at both T_C = 25 °C and T_C = 100 °C, as specified in Table 2 of the datasheet. This reflects its robust SOA and low R_DS(on) temperature coefficient, enabling full-rated current without derating in forced-air or heatsink-cooled industrial enclosures.

Does this MOSFET require a gate resistor for stability in PWM applications?

Yes - a gate resistor (typically 4.7 Ω, per Figure 15 test conditions) is recommended to dampen gate oscillation and control dV/dt during switching. The device's 1.4 Ω intrinsic gate resistance and 4040 pF C_iss make it susceptible to ringing with low-impedance drivers; omitting the resistor risks shoot-through in bridge configurations and EMI generation.

Can STP150N3LLH6 replace STP140NF55-08 in an existing design?

No - STP140NF55-08 is a 55 V, 140 A device with different R_DS(on) (8.8 mΩ), gate charge (130 nC), and thermal characteristics. STP150N3LLH6 has lower voltage rating (30 V) and higher current density but cannot substitute in 48 V systems. Direct replacement requires verification of bus voltage, SOA, and gate drive compatibility.

Is the TO-220 drain tab electrically isolated from the source pin?

No - in the STP150N3LLH6 TO-220 package, the metal drain tab is internally connected to pin 3 (Drain), not to the source. The source is on pin 1; therefore, the tab must be electrically isolated from the heatsink unless the system design intentionally references the heatsink to the drain potential.

STP150N3LLH6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VI

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4040 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP150N3LLH6 FAQ

1.How can I place an order for STP150N3LLH6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP150N3LLH6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP150N3LLH6 reliable?

The price and inventory of STP150N3LLH6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP150N3LLH6 is usually 5 days.

3.What payment methods are accepted for STP150N3LLH6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP150N3LLH6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP150N3LLH6?

STP150N3LLH6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP150N3LLH6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP150N3LLH6?

For technical support, including STP150N3LLH6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP150N3LLH6 requirements.

6.How does Aetrix verify that STP150N3LLH6 is sourced from the original manufacturer or authorized distributors?

All STP150N3LLH6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP150N3LLH6 meets industry standards.

7.What is the process for return or replacement of STP150N3LLH6?

All STP150N3LLH6 units undergo pre-shipment inspection (PSI). If there is an issue with STP150N3LLH6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP150N3LLH6 part is unused and in its original packaging.

Return procedure for STP150N3LLH6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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