STMicroelectronics STP150NF55

Overview

STP150NF55 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-220 package, rated for 55 V drain-source voltage, 0.005 Ω typical R_DS(on) at V_GS = 10 V, and 120 A continuous drain current at T_C = 25°C. It features rugged unclamped inductive switching capability with 850 mJ single-pulse avalanche energy and is optimized for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the STP150NF55 datasheet, STP150NF55 pinout, STP150NF55 application, or STP150NF55 equivalent, key selection criteria include its low on-resistance under high-current conduction, fast switching performance (t_d(on) = 35 ns, Q_g = 140 nC), thermal resistance (R_thj-case = 0.5 °C/W), and robust body diode recovery (t_rr = 130 ns, Q_rr = 350 nC).

Technical Context

This MOSFET employs ST's StripFET™ II process with single-feature-size strip geometry, enabling high cell density and low R_DS(on) without compromising avalanche ruggedness. Its gate threshold voltage (V_GS(th) = 2–4 V) ensures reliable turn-on with standard 10 V gate drivers, and its transconductance (g_fs = 160 S) supports stable high-current regulation.

The device exhibits tightly controlled dynamic parameters: C_iss = 4400 pF, C_oss = 1050 pF, and C_rss = 350 pF at V_DS = 25 V, enabling predictable switching behavior in hard-switched topologies. Its SOA curve supports repetitive unclamped inductive operation up to 480 A pulsed drain current with defined time limits.

Key Specifications

Pinout & Package

STP150NF55 uses a TO-220 package with three leads: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain and must be isolated from heatsink unless circuit topology permits common-drain configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFP4110PBF and STP160NF55, STP150NF55 offers the best balance of low R_DS(on), high avalanche energy, and TO-220 thermal performance-making it optimal for cost-sensitive, reliability-critical industrial switching applications where board space and heatsink volume are constrained.

Availability

STP150NF55 is available at Aetrix Electronics and suitable for DC-DC converters, motor drive half-bridges, and UPS inverters requiring stable component supply across long production cycles and varying demand volumes.

Supply support for STP150NF55 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STP150NF55 belongs to ST's STripFET™ II Power MOSFET product line, engineered specifically for high-current, high-reliability switching in industrial power conversion and motor control systems where avalanche ruggedness and thermal stability are mandatory.

FAQ

Is STP150NF55 suitable for synchronous rectification in a 48 V to 12 V buck converter?

Yes. With R_DS(on) = 0.005 Ω and V_SD = 1.5 V, STP150NF55 delivers lower conduction loss than Schottky diodes above ~10 A load current. Its 120 A rating and fast body diode recovery (t_rr = 130 ns) support efficient synchronous operation at 200–500 kHz, provided gate drive timing avoids shoot-through.

What is the maximum safe operating area (SOA) for repetitive unclamped inductive switching?

The SOA curve in Figure 1 defines safe operation up to 480 A pulsed drain current for pulse widths ≤10 µs at V_DD = 55 V and T_j ≤ 175°C. For repetitive operation, average power must stay below 300 W derated by 2 W/°C above 25°C case temperature, and avalanche energy per pulse must not exceed 850 mJ.

Can STP150NF55 be mounted directly to a copper heatsink without electrical isolation?

No. The metal tab is internally connected to the Drain terminal. Mounting without isolation creates a short between Drain and heatsink. Use a thermally conductive but electrically isolating pad (e.g., mica or ceramic) and ensure mounting screw does not contact exposed tab edges to prevent creepage failure.

How does the 0.005 Ω R_DS(on) perform at elevated junction temperatures?

R_DS(on) increases with temperature: at T_j = 125°C, it rises to ~0.0075 Ω (1.5× room-temperature value), per Figure 10. Designers must verify that worst-case conduction loss (I²R) at max T_j remains within thermal limits-especially for 100+ A continuous operation where self-heating dominates.