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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP15N60M2-EP

Name: STP15N60M2-EP
Brand: STMicroelectronics
SKU: STP15N60M2-EP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP15N60M2-EP

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP15N60M2-EP.pdf

Description:: MOSFET N-CH 600V 11A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP15N60M2-EP from STMicroelectronics is an N-channel 600 V, 11 A Power MOSFET in TO-220 package, featuring 0.340 Ω typ. R_DS(on), 17 nC total gate charge, and 15 V/ns diode recovery dv/dt ruggedness. It employs MDmesh™ M2 EP technology for ultra-low turn-off switching losses and is engineered for >150 kHz high-frequency converters in industrial SMPS and PFC stages.

For engineers reviewing the STP15N60M2-EP datasheet, STP15N60M2-EP pinout, STP15N60M2-EP application, or STP15N60M2-EP equivalent, key selection criteria include avalanche-rated operation (2.8 A repetitive), Zener-protected gate, 100% unclamped inductive switching tested, and optimized C_oss profile for soft-switching topologies.

Technical Context

This MOSFET uses a strip-layout MDmesh™ M2 EP vertical structure to achieve low conduction loss while maintaining fast, controlled switching. Its 1.14 °C/W junction-to-case thermal resistance and 125 mJ single-pulse avalanche energy support thermally constrained high-power designs.

The device integrates a robust body diode with 280 ns reverse recovery time (T_j = 25 °C) and 19.5 A peak reverse recovery current, enabling reliable operation in hard- and resonant-switched inductive loads without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	600 V - supports 400 V DC bus designs with 50% voltage margin for transient overvoltage
R_DS(on) typ.	0.340 Ω @ V_GS = 10 V, I_D = 5.5 A - enables <1.5 W conduction loss at 11 A continuous drain current
Q_g	17 nC - reduces gate drive power and allows use of low-current drivers in high-frequency operation
E_off typ.	4.7 µJ @ V_DD = 400 V, I_D = 1.5 A - minimizes switching loss contribution in >150 kHz converters
C_oss eq.	148 pF @ V_DS = 0–480 V - provides predictable timing for resonant tank design and ZVS implementation
T_j max	150 °C - permits operation in sealed enclosures with limited airflow when mounted on heatsink
Avalanche Energy	125 mJ (single pulse) - withstands unclamped inductive transients without failure in flyback or LLC primary switches

Pinout & Package

Supplied in TO-220 type A package with isolated tab (drain-connected), standard 3-pin through-hole configuration. Mounting hole accommodates M3 screw; tab electrically connected to drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain	Main high-side power path; thermally coupled to heatsink; requires insulating washer if chassis-grounded
G (Pin 1)	Gate	Control input; sensitive to ESD; requires gate resistor (4.7 Ω typical) to damp ringing and limit dV/dt-induced turn-on
S (Pin 3)	Source	Power return reference; connects to driver ground and current-sense shunt; defines local signal reference plane

Key Features

Feature	Design Value
Extremely low gate charge	17 nC total charge enables efficient 300–500 kHz switching with minimal driver dissipation
Optimized C_oss profile	148 pF equivalent output capacitance ensures predictable zero-voltage switching behavior across 0–480 V range
Very low turn-off switching losses	4.7 µJ E_off at 1.5 A reduces thermal stress in high-duty-cycle PFC boost stages
Zener-protected gate	±25 V gate-source rating with integrated protection prevents gate oxide rupture during layout parasitic coupling
100% avalanche tested	Each unit validated for 2.8 A repetitive avalanche current, ensuring field reliability in inductive fault conditions

Applications

Industrial SMPS Primary Switch

Server PSU PFC Boost Stage

Use Scenario: 3.5 kW telecom rectifier operating at 200 kHz with interleaved boost topology.

IC Role / Device Role / Timing Role: Main switching element in continuous conduction mode (CCM) boost converter; handles 11 A RMS input current.

Use Value: Low Q_g and optimized C_oss reduce gate drive loss and enable precise ZVS timing control across line/load variations.

Use Scenario: 80 PLUS Titanium-certified 1.5 kW server power supply with active clamp forward-derived PFC.

IC Role / Device Role / Timing Role: High-side switch in critical conduction mode (CrCM) boost stage; operates with 44 A pulsed drain current.

Use Value: 125 mJ single-pulse avalanche energy and 15 V/ns diode recovery dv/dt ruggedness prevent failure during line surge events.

Induction Heating Half-Bridge

EV Onboard Charger LLC Resonant Switch

Use Scenario: 5 kW domestic induction cooktop using asymmetric half-bridge with 100 kHz fundamental frequency.

IC Role / Device Role / Timing Role: Low-side switch subjected to high di/dt (400 A/µs) and reverse recovery stress during commutation.

Use Value: 280 ns T_rr and 2.7 µC Q_rr minimize shoot-through risk and reduce snubber losses in hard-commutated bridges.

Use Scenario: 6.6 kW bidirectional OBC with dual LLC resonant tanks operating at 350 kHz.

IC Role / Device Role / Timing Role: Primary-side resonant switch handling 11 A continuous current with 500 V blocking requirement.

Use Value: 0.340 Ω R_DS(on) and 1.14 °C/W R_th(j-c) allow direct heatsink mounting without thermal derating up to 85 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C7	650 V, 0.190 Ω, 17.5 nC, TO-220FP package; lower R_DS(on) but higher Q_g and no avalanche rating	Preferred in space-constrained designs where conduction loss dominates; unsuitable for unclamped inductive loads	Select only when gate drive capability supports 17.5 nC and system-level avalanche immunity is ensured externally
STW20N65M5	650 V, 0.220 Ω, 22 nC, TO-247 package; MDmesh™ M5 process, higher current rating (20 A), no Zener gate protection	Better for higher-power (>5 kW) applications requiring lower R_DS(on); larger footprint and higher gate drive demand	Choose when thermal headroom exists and board layout accommodates TO-247; verify gate driver slew rate compatibility

Compared with IPP60R190C7 and STW20N65M5, the STP15N60M2-EP offers superior avalanche ruggedness and Zener gate protection in a cost-optimized TO-220 form factor-making it ideal for mid-power industrial converters where reliability under transient stress is prioritized over minimum conduction loss.

Availability

STP15N60M2-EP is available at Aetrix Electronics and suitable for industrial SMPS, server PSU PFC stages, induction heating systems, and EV onboard charger resonant converters requiring stable component supply and long-term manufacturing continuity.

Supply support for STP15N60M2-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, delivering innovative solutions across automotive, industrial, power, and analog markets with strong IP in silicon carbide and advanced silicon processes.

This device belongs to ST's MDmesh™ M2 EP high-voltage MOSFET product line, designed specifically for high-frequency, high-efficiency power conversion in industrial and computing power supplies where switching loss reduction and avalanche robustness are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP15N60M2-EP supports 7 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits imposed by its 1.14 °C/W junction-to-case resistance and safe operating area constraints-not gate drive capability or package current-handling limits.

Is the TO-220 tab electrically isolated or drain-connected?

The TO-220 tab is drain-connected and not electrically isolated. The "EP" suffix denotes enhanced performance, not isolation; users must apply an insulating washer and thermal pad when mounting to a grounded heatsink to prevent short circuits.

Does this MOSFET include integrated gate Zener protection?

Yes-the device integrates a Zener diode between gate and source, enabling ±25 V absolute maximum gate-source voltage rating. This protection clamps transient overvoltage induced by layout parasitics or Miller coupling, eliminating need for external gate Zener in most applications.

Can STP15N60M2-EP replace STP15N60M2 in existing designs?

Yes-STP15N60M2-EP is a drop-in replacement for STP15N60M2 with identical pinout, electrical specs, and package. The "-EP" suffix indicates enhanced performance version with improved R_DS(on) consistency and tighter dynamic parameter distribution, verified per production data sheet DocID027298 Rev 2.

STP15N60M2-EP Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2-EP

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 378mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 590 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP15N60M2-EP FAQ

1.How can I place an order for STP15N60M2-EP through Aetrix?

Please submit a Request for Quotation (RFQ) for STP15N60M2-EP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP15N60M2-EP reliable?

The price and inventory of STP15N60M2-EP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP15N60M2-EP is usually 5 days.

3.What payment methods are accepted for STP15N60M2-EP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP15N60M2-EP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP15N60M2-EP?

STP15N60M2-EP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP15N60M2-EP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP15N60M2-EP?

For technical support, including STP15N60M2-EP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP15N60M2-EP requirements.

6.How does Aetrix verify that STP15N60M2-EP is sourced from the original manufacturer or authorized distributors?

All STP15N60M2-EP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP15N60M2-EP meets industry standards.

7.What is the process for return or replacement of STP15N60M2-EP?

All STP15N60M2-EP units undergo pre-shipment inspection (PSI). If there is an issue with STP15N60M2-EP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP15N60M2-EP part is unused and in its original packaging.

Return procedure for STP15N60M2-EP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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