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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP15N65M5

Name: STP15N65M5
Brand: STMicroelectronics
SKU: STP15N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP15N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP15N65M5.pdf

Description:: MOSFET N CH 650V 11A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP15N65M5 from STMicroelectronics is an N-channel 650 V, 308 mΩ (typ.), 11 A MDmesh M5 Power MOSFET in TO-220 package, designed for high-efficiency switching in offline SMPS, PFC stages, and industrial motor drives. It delivers 15 V/ns dv/dt capability, 160 mJ single-pulse avalanche energy, and 22 nC total gate charge.

For engineers reviewing the STP15N65M5 datasheet, STP15N65M5 pinout, STP15N65M5 application, or STP15N65M5 equivalent, key selection criteria include R_DS(on) stability over temperature, unclamped inductive switching robustness, source-drain diode recovery performance (Q_rr = 2.4 µC), and thermal resistance (R_thJC = 1.47 °C/W).

Technical Context

This MOSFET employs ST's MDmesh M5 vertical superjunction process combined with PowerMESH horizontal layout to achieve ultra-low R_DS(on) while maintaining high V_DSS and superior dv/dt immunity. Its 650 V rating supports universal-input AC-DC designs up to 400 V DC bus.

The device integrates a fast-recovery body diode (t_rr = 247 ns, Q_rr = 2.4 µC at 25 °C) and is 100% avalanche tested to 2.5 A repetitive current. Gate threshold voltage is tightly specified (3–5 V), enabling reliable drive with standard 10 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Supports 400 V DC bus with 62.5 % safety margin in offline converters
R_DS(on) max	340 mΩ at V_GS = 10 V, I_D = 5.5 A - Enables <1.9 W conduction loss at 11 A continuous
I_D (T_C = 25 °C)	11 A - Rated for continuous operation with heatsink at 25 °C case temperature
E_AS	160 mJ - Withstands single-pulse inductive energy without failure under unclamped conditions
Q_g	22 nC - Optimized for fast turn-on/turn-off with moderate gate driver strength (e.g., 1–2 A peak)
t_r, t_f	8 ns / 11 ns - Enables >500 kHz switching in hard-switched topologies with low switching loss
R_thJC	1.47 °C/W - Allows 57.8 °C/W junction-to-ambient rise per watt when mounted on standard TO-220 heatsink

Pinout & Package

TO-220 package with isolated tab (drain-connected); standard 3-pin vertical mounting configuration. Tab is electrically connected to drain (D) and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate	High-impedance control terminal; requires 10 V drive for full enhancement; R_g = 5 Ω intrinsic
D (Pin 2 / Tab)	Drain	Main high-voltage power terminal; tab provides low-inductance, low-thermal-resistance connection to PCB heatsink
S (Pin 3)	Source	Power return and reference node for gate drive; forms common-source switching topology with D and G

Key Features

Feature	Design Value
MDmesh M5 superjunction structure	Reduces R_DS(on) × A by 40 % vs. prior-generation 650 V MOSFETs, improving power density
100 % avalanche tested	Guarantees ruggedness in unclamped inductive switching (UIS) events up to 2.5 A repetitive current
Low Q_gd/Q_gs ratio (2.0)	Minimizes Miller-induced shoot-through risk and improves hard-switching EMI behavior
Optimized body diode	Q_rr = 2.4 µC and soft recovery (I_RRM = 19.5 A) reduce snubber losses and EMI in bridge configurations
ECOPACK® compliant	Meets RoHS and halogen-free requirements without compromising thermal or electrical performance

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100–500 kHz with 380–400 V DC bus.

IC Role / Device Role / Timing Role: Main switch in LLC resonant half-bridge primary side; handles 11 A RMS current with minimal conduction loss.

Use Value: 308 mΩ R_DS(on) reduces conduction loss by 22 % vs. legacy 650 V MOSFETs, directly improving full-load efficiency.

Use Scenario: Active boost PFC stage in 3 kW industrial UPS with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Fast-switching boost switch operating in CCM at 65–100 kHz; manages 11 A peak inductor current.

Use Value: Low Q_g (22 nC) and fast t_r/t_f enable efficient high-frequency operation while minimizing gate drive loss.

Motor Drive Inverter Leg

EV Charger DC-DC Isolation Stage

Use Scenario: 7.5 kW three-phase inverter for HVAC compressors, using six-pack TO-220 modules.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid inverter leg; commutates 11 A motor phase current.

Use Value: Avalanche-rated design withstands inductive kickback during short-circuit fault clearing without desaturation protection.

Use Scenario: Secondary-side synchronous rectifier or primary-side switch in 11 kW bidirectional OBC DC-DC stage.

IC Role / Device Role / Timing Role: High-voltage switch in phase-shifted full-bridge topology handling 400–800 V DC link.

Use Value: 15 V/ns dv/dt capability ensures noise immunity and prevents false turn-on in high dV/dt transformer-isolated environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP65R380C7	R_DS(on) = 380 mΩ (higher), Q_g = 20 nC (lower), V_DSS = 650 V, TO-220FP package	Lower gate charge enables faster switching but higher conduction loss limits use in high-current PFC	Select when gate drive strength is limited and thermal headroom exists for higher R_DS(on)
STW15N65M5	Same die, TO-247 package; R_thJC = 0.85 °C/W (lower), same R_DS(on), Q_g, and avalanche rating	Better thermal performance allows 15 A continuous operation at T_C = 100 °C vs. 6.9 A for STP15N65M5	Select when higher power density or extended temperature operation is required and TO-247 footprint is acceptable

Compared with IPP65R380C7, STP15N65M5 offers lower conduction loss and better thermal derating in TO-220; compared with STW15N65M5, it trades thermal performance for lower cost and smaller footprint-ideal for space-constrained 11 A designs where heatsinking is optimized.

Availability

STP15N65M5 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and EV charging infrastructure requiring stable component supply and long-term manufacturing continuity.

Supply support for STP15N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

STP15N65M5 belongs to the MDmesh™ M5 high-voltage superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion systems demanding ruggedness and low loss.

FAQ

Is STP15N65M5 suitable for zero-voltage switching (ZVS) topologies?

Yes. Its low output capacitance (C_oss = 23 pF typ.) and fast reverse recovery (t_rr = 247 ns) support ZVS operation in resonant LLC and phase-shifted full-bridge converters. The 520 V rated V_DD test condition in gate charge characterization confirms compatibility with typical ZVS voltage stress profiles.

What is the maximum recommended gate resistor for reliable switching?

A gate resistor of 4.7 Ω is validated in the datasheet for 400 V, 7 A inductive switching. For 11 A operation, 2.2–3.3 Ω is recommended to maintain t_f < 12 ns and avoid excessive E_off. Higher values (>10 Ω) increase switching loss and risk incomplete turn-off under high di/dt conditions.

Does the body diode require external anti-parallel diode supplementation?

No. The integrated body diode is fully characterized (Q_rr = 2.4 µC, t_rr = 247 ns, V_SD = 1.5 V) and qualified for synchronous rectification and freewheeling in bridge legs. External diodes are unnecessary unless ultra-low forward drop (<0.8 V) or sub-100 ns recovery is mandated.

How does R_DS(on) vary across temperature and current?

R_DS(on) increases linearly with junction temperature: normalized to 1.0 at 25 °C, it reaches ~1.65× at 150 °C (per Figure 10). At I_D = 11 A and V_GS = 10 V, R_DS(on) remains within 340 mΩ max across –55 to 150 °C, ensuring predictable conduction loss in thermal transients.

STP15N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 340mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 810 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP15N65M5 FAQ

1.How can I place an order for STP15N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP15N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP15N65M5 reliable?

The price and inventory of STP15N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP15N65M5 is usually 5 days.

3.What payment methods are accepted for STP15N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP15N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP15N65M5?

STP15N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP15N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP15N65M5?

For technical support, including STP15N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP15N65M5 requirements.

6.How does Aetrix verify that STP15N65M5 is sourced from the original manufacturer or authorized distributors?

All STP15N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP15N65M5 meets industry standards.

7.What is the process for return or replacement of STP15N65M5?

All STP15N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STP15N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP15N65M5 part is unused and in its original packaging.

Return procedure for STP15N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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