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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP15N80K5

Name: STP15N80K5
Brand: STMicroelectronics
SKU: STP15N80K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP15N80K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP15N80K5.pdf

Description:: MOSFET N-CH 800V 14A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP15N80K5 from STMicroelectronics is an N-channel 800 V, 375 mΩ (max) high-voltage power MOSFET in TO-220 package, designed for hard-switched and resonant-mode SMPS, PFC stages, and industrial motor drives. It delivers 14 A continuous drain current at T_C = 25 °C, features ultra-low 32 nC total gate charge, and is 100% avalanche tested to 150 mJ single-pulse energy.

For engineers reviewing the STP15N80K5 datasheet, STP15N80K5 pinout, STP15N80K5 application, or STP15N80K5 equivalent, key selection criteria include R_DS(on) stability over temperature, dv/dt ruggedness (4.5 V/ns), Zener-protected gate, and thermal resistance (R_thJC = 3.6 °C/W) for conduction-limited high-voltage switching designs.

Technical Context

This MDmesh K5 device uses a proprietary vertical structure to reduce on-resistance and gate charge simultaneously-achieving 300 mΩ typ. R_DS(on) and 32 nC Q_g at V_GS = 10 V, ID = 14 A. Its 800 V V_(BR)DSS rating enables use in 400 V AC-input PFC and 600 V DC-link inverters without derating.

The integrated body diode exhibits 445 ns trr and 8.2 µC Q_rr at TJ = 25 °C, supporting moderate-frequency ZVS operation. The 2.5 kV insulation withstand voltage (RMS, 1 s) between leads and heatsink confirms suitability for isolated high-side configurations in industrial power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	800 V - Withstands 400 V AC rectified input with ≥2× safety margin in offline SMPS
R_DS(on) max	375 mΩ at V_GS = 10 V, I_D = 7 A - Enables <1.5 W conduction loss at 10 A, critical for thermally constrained TO-220 layouts
Q_g	32 nC - Reduces gate drive power and switching transition time in 65–100 kHz PFC controllers
I_D cont @ T_C = 25 °C	14 A - Supports 200–300 W continuous output in single-transistor flyback or forward converters
dv/dt rating	4.5 V/ns - Ensures reliable operation during fast voltage transients in hard-switched topologies
E_AS	150 mJ - Guarantees unclamped inductive switching survival in motor drive half-bridges
R_thJC	3.6 °C/W - Allows 190 W dissipation at ΔT = 684 °C (practically limited by 150 °C T_J max)

Pinout & Package

STP15N80K5 is housed in a through-hole TO-220 package with isolated tab (pin 2). The case is electrically connected to the drain terminal, requiring insulated mounting hardware when used in high-side or floating configurations.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate (G)	High-impedance control input; requires ≤±30 V drive; Zener-clamped internally
2 (Center, Tab)	Drain (D)	Main high-voltage power terminal; electrically tied to metal tab; must be insulated from heatsink unless referenced to system ground
3 (Right)	Source (S)	Power return path and gate reference; connects to PCB ground plane or low-side switch node

Key Features

Feature	Design Value
Ultra-low gate charge	32 nC total charge enables efficient 100 kHz+ switching with standard gate drivers (e.g., STGW30V60DF)
Zener-protected gate	Integrated ±30 V gate-source clamp eliminates need for external TVS, reducing BOM count in space-constrained PFC modules
100% avalanche tested	Each unit validated to 150 mJ single-pulse E_AS, ensuring robustness in inductive load switching without snubbers
Low FoM (R_DS(on) × Q_g)	11.9 Ω·nC - Optimized trade-off for high-efficiency, high-power-density offline converters
MDmesh K5 vertical structure	Reduces specific on-resistance by >30% vs. prior K3 generation, lowering die size and thermal stress at 800 V rating

Applications

Industrial Motor Drives

Server PSU PFC Stages

Use Scenario: Half-bridge inverter stage for 0.75 kW BLDC motor control in HVAC compressors.

IC Role / Device Role / Timing Role: High-side N-channel switch in 20 kHz PWM-driven bridge; handles 400 V DC bus with 14 A peak phase current.

Use Value: 375 mΩ R_DS(on) limits conduction loss to <1.5 W at full load, enabling natural convection cooling in sealed enclosures.

Use Scenario: Boost switch in active PFC front-end of 1U 1.5 kW server power supply.

IC Role / Device Role / Timing Role: Main switching element operating at 65 kHz with CCM control; sustains 800 V blocking during line dips.

Use Value: 4.5 V/ns dv/dt rating prevents spurious turn-on during fast voltage transitions across transformer leakage inductance.

Photovoltaic Inverters

Induction Heating Systems

Use Scenario: DC-link switch in string-level MPPT converter for residential solar arrays.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in buck-derived topology; blocks up to 1000 V DC under fault conditions.

Use Value: 800 V V_(BR)DSS provides sufficient margin for 600 V nominal DC strings exposed to lightning-induced surges.

Use Scenario: Resonant inverter half-bridge in 20 kW commercial induction cooker.

IC Role / Device Role / Timing Role: Hard-switched main switch operating at 20–50 kHz; conducts 14 A RMS with high di/dt demands.

Use Value: 150 mJ E_AS rating ensures survival during zero-crossing commutation faults without external clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW15N80K5	Same die, TO-247 package; R_thJC = 0.66 °C/W vs. 3.6 °C/W; 190 W P_TOT vs. 35 W	Required for >100 W continuous conduction in forced-air or heatsink-mounted systems	Select when thermal budget exceeds TO-220 capability; avoid if board space or cost constraints favor through-hole simplicity
IPP60R190C7	650 V rating, 190 mΩ R_DS(on), 60 A ID; CoolMOS C7 technology; lower Q_g (25 nC) but reduced voltage margin	Suitable only for 380 V DC-link systems; not rated for 400 V AC rectified inputs	Choose only if system DC bus is strictly ≤400 V and efficiency gain outweighs reduced surge immunity

Compared with STW15N80K5, STP15N80K5 trades 5.3× higher thermal resistance for lower assembly cost and smaller footprint; versus IPP60R190C7, it sacrifices 25% lower R_DS(on) to guarantee 800 V blocking-critical for universal-input offline power conversion.

Availability

STP15N80K5 is available at Aetrix Electronics and suitable for industrial motor drives, server PSU PFC stages, and photovoltaic inverters requiring stable component supply across multi-year production cycles.

Supply support for STP15N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.

STP15N80K5 belongs to the MDmesh K5 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion where 800 V blocking, low R_DS(on), and rugged avalanche performance are mandatory.

FAQ

What is the maximum continuous drain current for STP15N80K5 at 100 °C case temperature?

The maximum continuous drain current is 8.8 A at T_C = 100 °C, as specified in Table 1 of DS9181 Rev 4. This derating reflects thermal limitations of the TO-220 package, where junction-to-case resistance (3.6 °C/W) and safe operating area constrain current handling at elevated temperatures.

Does STP15N80K5 have an integrated body diode, and what are its recovery characteristics?

Yes, STP15N80K5 includes a monolithic source-drain diode with typical reverse recovery time (t_rr) of 445 ns and reverse recovery charge (Q_rr) of 8.2 µC at T_J = 25 °C. These values increase to 580 ns and 10 µC at T_J = 150 °C, per Table 7 in the datasheet.

Can STP15N80K5 be used in avalanche mode, and what is its rated single-pulse energy?

Yes-STP15N80K5 is 100% tested for avalanche ruggedness. Its rated single-pulse avalanche energy (E_AS) is 150 mJ at T_J = 25 °C, with I_AR = 4 A and V_DD = 50 V, as defined in Table 3. Repetitive avalanche is not characterized and should be avoided in design.

Is the TO-220 tab of STP15N80K5 electrically isolated from the leads?

No-the metal tab is internally connected to the drain (pin 2) and is not electrically isolated. When mounting to a heatsink, an insulating washer and shoulder washer must be used unless the heatsink is referenced to the drain potential, as confirmed in Figure 27 and Table 10 of DS9181 Rev 4.

STP15N80K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH5™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 375mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP15N80K5 FAQ

1.How can I place an order for STP15N80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP15N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP15N80K5 reliable?

The price and inventory of STP15N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP15N80K5 is usually 5 days.

3.What payment methods are accepted for STP15N80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP15N80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP15N80K5?

STP15N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP15N80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP15N80K5?

For technical support, including STP15N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP15N80K5 requirements.

6.How does Aetrix verify that STP15N80K5 is sourced from the original manufacturer or authorized distributors?

All STP15N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP15N80K5 meets industry standards.

7.What is the process for return or replacement of STP15N80K5?

All STP15N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STP15N80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP15N80K5 part is unused and in its original packaging.

Return procedure for STP15N80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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