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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP15N95K5

Name: STP15N95K5
Brand: STMicroelectronics
SKU: STP15N95K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP15N95K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP15N95K5.pdf

Description:: MOSFET N-CH 950V 12A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:6,177

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Product details

Overview

STP15N95K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET based on MDmesh K5 technology, designed for switching applications requiring 950 V blocking capability, 410 mΩ typical R_DS(on), and 12 A continuous drain current at T_C = 25 °C in TO-220 package. It features ultra-low gate charge (30 nC), Zener-protected gate, and 100% avalanche tested performance for industrial HVAC inverters and offline SMPS.

For engineers reviewing the STP15N95K5 datasheet, STP15N95K5 pinout, STP15N95K5 application, or STP15N95K5 equivalent, key selection criteria include its 950 V V_(BR)DSS, 30 nC Q_g, 410 mΩ R_DS(on) typ., 7.6 A I_D @ 100 °C, and TO-220 thermal resistance of 0.74 °C/W R_thJC.

Technical Context

This MOSFET employs ST's proprietary vertical MDmesh K5 structure to achieve ultra-low on-resistance and figure-of-merit (FoM), enabling high power density in hard-switched topologies. Its gate threshold voltage (3–5 V) and low Crss (1 pF) support robust dv/dt ruggedness up to 50 V/ns.

The integrated body diode exhibits 444 ns trr and 7 µC Q_rr at 25 °C, with 1.5 V forward voltage at 12 A, making it suitable for flyback and resonant converters where diode recovery behavior impacts EMI and efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	950 V - Enables direct connection to 690 VAC three-phase rectified rails without series stacking.
R_DS(on) typ.	410 mΩ @ V_GS = 10 V, I_D = 6 A - Delivers <1.5 W conduction loss at 6 A, critical for thermally constrained enclosures.
Q_g	30 nC - Reduces gate drive power and enables use with low-current drivers in high-frequency (>100 kHz) SMPS designs.
E_AS	124 mJ @ T_J = 25 °C - Supports unclamped inductive switching in PFC and motor control without external snubbers.
R_thJC	0.74 °C/W - Allows 170 W dissipation at ΔT = 126 °C, supporting high-power operation with standard heatsinks.
dv/dt ruggedness	50 V/ns - Ensures reliable operation under fast transient conditions in high-noise industrial environments.

Pinout & Package

STP15N95K5 is housed in a TO-220 package with isolated tab (pin 2), featuring three terminals: Gate (G), Drain (D), and Source (S). The tab is electrically connected to the Drain, requiring insulating mounting hardware when mounted to a common heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts 0–10 V logic-level drive; Zener-protected to ±30 V maximum rating.
Pin 2 (TAB/D)	Drain	Main high-side power terminal; electrically tied to metal tab; must be insulated from heatsink unless referenced to same potential.
Pin 3 (S)	Source	Power return path and reference for gate drive; connects to ground or low-side switch node in half-bridge configurations.

Key Features

Feature	Design Value
Ultra-low gate charge	30 nC total gate charge reduces driver losses and enables >200 kHz switching in PFC stages.
Zener-protected gate	±30 V V_GS rating with integrated protection eliminates need for external gate clamping diodes.
100% avalanche tested	Each unit validated for single-pulse E_AS = 124 mJ, ensuring field reliability in inductive load transients.
MDmesh K5 vertical structure	Reduces R_DS(on) × Q_g FoM by >40% vs. prior-generation superjunction MOSFETs, improving system efficiency.

Applications

Industrial Motor Drives

Server PSU PFC Stages

Use Scenario: Three-phase inverter stage in 7.5 kW HVAC compressors operating from 400–690 VAC input.

IC Role / Device Role / Timing Role: High-side switching element in IGBT/MOSFET-based 6-pulse inverter, switching at 8–16 kHz.

Use Value: 950 V rating avoids series stacking; 0.74 °C/W R_thJC enables compact heatsink design without forced air.

Use Scenario: Boost switch in 3.5 kW server front-end PFC with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter, operating at 65–100 kHz.

Use Value: 30 nC Q_g minimizes gate drive loss; 410 mΩ R_DS(on) maintains >98% efficiency at full load.

Off-line LED Drivers

High-Voltage DC-DC Converters

Use Scenario: Primary-side switch in 200 W constant-current LED driver for street lighting, fed from 347 VAC line.

IC Role / Device Role / Timing Role: Flyback primary switch handling 600 V+ reflected transients during demagnetization.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on; 124 mJ E_AS absorbs leakage inductance energy safely.

Use Scenario: Primary switch in 1 kV output isolated DC-DC converter for telecom power systems.

IC Role / Device Role / Timing Role: Hard-switched active clamp forward or LLC primary FET, operating at 150–300 kHz.

Use Value: Low Crss (1 pF) improves zero-voltage switching margin; TO-220 isolation supports 2.5 kV V_ISO creepage requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW15N95K5	Same die, TO-247 package; R_thJC = 0.42 °C/W (vs. 0.74 °C/W); higher P_TOT = 300 W.	Better thermal performance for >200 W continuous operation; requires larger PCB footprint and heatsink interface.	Select when junction temperature must stay <125 °C under sustained 12 A load without forced cooling.
IPP65R095C7	650 V rating, 95 mΩ R_DS(on), TO-220; lower V_(BR)DSS but superior FoM at 600 V systems.	Not suitable for 950 V applications; optimized for 400 VAC PFC and EV chargers with tighter voltage margins.	Choose only for 380–480 VAC input systems where 650 V rating suffices and lower R_DS(on) justifies voltage derating.

Compared with STW15N95K5, STP15N95K5 trades thermal headroom for compact layout; versus IPP65R095C7, it provides essential 950 V capability at the cost of higher conduction loss in sub-600 V systems.

Availability

STP15N95K5 is available at Aetrix Electronics and suitable for industrial motor drives, server PSU PFC stages, off-line LED drivers, and high-voltage DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for STP15N95K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh K5 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-power-density switching applications in industrial power supplies and motor controls.

FAQ

Is STP15N95K5 suitable for zero-voltage switching (ZVS) topologies?

Yes - its low Crss (1 pF) and 30 nC Q_g enable clean ZVS turn-on in LLC and phase-shifted full-bridge converters. Measured 22 nC Q_gd ensures predictable Miller plateau timing, critical for accurate dead-time control in resonant designs.

What is the maximum recommended gate resistor for hard-switched 100 kHz operation?

A 10 Ω gate resistor is recommended for 100 kHz hard-switched operation, balancing switching speed (td(on)/td(off) ≈ 23/62 ns) against ringing and EMI. Lower values (<5 Ω) increase peak gate current beyond 2 A and risk overshoot; higher values degrade efficiency.

Does the TO-220 package provide sufficient creepage for 2.5 kV isolation requirements?

Yes - the STP15N95K5 TO-220FP variant (not standard TO-220) is rated for V_ISO = 2.5 kV RMS from all leads to heatsink. Standard TO-220 requires external insulation sleeves or slotting to meet this requirement; verify layout per IEC 60950-1 spacing rules.

How does the body diode performance compare to discrete ultrafast diodes in flyback designs?

Its 444 ns trr and 7 µC Q_rr at 25 °C are comparable to 600 V ultrafast diodes, but reverse recovery current peaks at 32 A - requiring careful snubber design. At 150 °C, trr increases to 630 ns and Q_rr to 9.2 µC, necessitating derating in high-temperature flyback primary-side rectification.

STP15N95K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH5™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 950 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 900 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP15N95K5 FAQ

1.How can I place an order for STP15N95K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP15N95K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP15N95K5 reliable?

The price and inventory of STP15N95K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP15N95K5 is usually 5 days.

3.What payment methods are accepted for STP15N95K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP15N95K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP15N95K5?

STP15N95K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP15N95K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP15N95K5?

For technical support, including STP15N95K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP15N95K5 requirements.

6.How does Aetrix verify that STP15N95K5 is sourced from the original manufacturer or authorized distributors?

All STP15N95K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP15N95K5 meets industry standards.

7.What is the process for return or replacement of STP15N95K5?

All STP15N95K5 units undergo pre-shipment inspection (PSI). If there is an issue with STP15N95K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP15N95K5 part is unused and in its original packaging.

Return procedure for STP15N95K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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