STMicroelectronics STP15NK50ZFP
- Part No.:
- STP15NK50ZFP
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
STP15NK50ZFP.pdf
- Description:
- MOSFET N-CH 500V 14A TO220FP
- Quantity:
- Payment:

- Shipping:

Inventory:5,060
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Product details
Overview
STP15NK50ZFP from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 500 V drain-source voltage, 340 mΩ maximum RDS(on), and 14 A continuous drain current at TC = 25 °C. It features 100% avalanche testing, extremely high dv/dt capability (4.5 V/ns), and minimized gate charge (76 nC typ.), making it suitable for hard-switched offline SMPS and industrial motor control inverters.
For engineers reviewing the STP15NK50ZFP datasheet, STP15NK50ZFP pinout, STP15NK50ZFP application, or STP15NK50ZFP equivalent, key selection criteria include its TO-220 package thermal resistance (RthJC = 0.78 °C/W), 300 mΩ typical on-resistance, 160 W total power dissipation, and robust 4 kV HBM ESD rating - all critical for high-reliability 500 V switching designs.
Technical Context
This device implements ST's SuperMESH process - an evolution of PowerMESH - to simultaneously reduce RDS(on) and intrinsic capacitance while maintaining ruggedness. Its Zener-protected gate structure enables stable operation under transient overvoltage conditions without external clamping.
The MOSFET delivers 300 mΩ typical RDS(on) at VGS = 10 V and ID = 7 A, with Ciss = 2260 pF and Coss = 264 pF at VDS = 25 V. Its 428 ns reverse recovery time (TJ = 150 °C) and 4.2 µC Qrr support fast inductive switching in flyback and resonant converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - supports primary-side switching in universal-input AC-DC adapters up to 380 V DC bus |
| RDS(on) max | 340 mΩ - limits conduction loss to ≤ 66 W at 14 A, enabling compact heatsink design |
| ID cont @ TC=25°C | 14 A - defines maximum continuous output current in TO-220 package with adequate heatsinking |
| EAS | 300 mJ - ensures single-pulse unclamped inductive energy handling without failure |
| dv/dt capability | 4.5 V/ns - prevents spurious turn-on during high-slew-rate voltage transients in bridge legs |
| Qg typ | 76 nC - determines gate driver power requirement and switching speed trade-off |
| VGS(th) | 3.0–4.5 V - enables reliable turn-on with standard 5 V or 10 V logic-level gate drivers |
Pinout & Package
STP15NK50ZFP uses the TO-220 type A package with isolated tab (drain-connected). The three terminals are arranged in linear order: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; requires ≤ ±30 V bias; 100 µA leakage max at ±20 V |
| Pin 2 (D / Tab) | Drain | Main high-voltage power terminal; electrically connected to metal tab; must be insulated from heatsink unless referenced to same potential |
| Pin 3 (S) | Source | Power return path and reference for gate drive; forms common node with internal body diode cathode |
Key Features
| Feature | Design Value |
|---|---|
| Zener-protected gate | Integrated 30 V Zener clamp prevents gate oxide rupture during ESD or gate-drive faults |
| 100% avalanche tested | Every unit validated for 300 mJ single-pulse avalanche energy - guarantees ruggedness in inductive fault conditions |
| Extremely high dv/dt capability | Rated 4.5 V/ns with ISD ≤ 14 A and di/dt ≤ 200 A/µs - suppresses false triggering in half-bridge cross-conduction scenarios |
| Minimized gate charge | 76 nC typical total gate charge reduces driver losses and enables >100 kHz switching in PFC stages |
| Low intrinsic capacitance | Ciss = 2260 pF, Coss = 264 pF - improves efficiency in resonant topologies by reducing capacitive switching loss |
Applications
| Industrial Motor Drives | Server PSU Primary Switch |
|---|---|
|
Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC compressors. IC Role / Device Role / Timing Role: High-side and low-side switching element handling 380 V DC bus and 10–12 A peak phase current. Use Value: 340 mΩ RDS(on) limits conduction loss to <1.5 W per device at 10 A, while 4.5 V/ns dv/dt immunity prevents shoot-through during fast PWM transitions. |
Use Scenario: Active clamp forward or LLC resonant converter primary switch in 1–3 kW server power supplies. IC Role / Device Role / Timing Role: Main power switch operating at 100–300 kHz with 400 V DC input and 50–100 A pulsed drain current. Use Value: 300 mΩ typical RDS(on) and 76 nC Qg enable high-efficiency operation with minimal gate drive power; 300 mJ EAS withstands clamp circuit energy spikes. |
| AC-DC Adapter Flyback | UPS Inverter Stage |
|
Use Scenario: Primary-side switch in 150–300 W universal-input (90–264 V AC) flyback converters for medical equipment. IC Role / Device Role / Timing Role: Self-oscillating or PWM-controlled high-voltage switch with ZVS capability. Use Value: 500 V VDS rating provides 2× safety margin over 385 V rectified peak; 428 ns trr minimizes diode recovery loss during discontinuous conduction mode. |
Use Scenario: Output H-bridge in online double-conversion UPS systems delivering clean 230 V AC sine wave. IC Role / Device Role / Timing Role: Low-loss switching device in 5–10 kHz PWM-driven inverter leg handling 1–2 kVA load. Use Value: TO-220 package with 0.78 °C/W RthJC allows direct mounting to aluminum chassis; 14 A continuous rating supports 1.5× surge current during battery backup transition. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW15NK50Z | Same die, TO-247 package; RthJC = 0.78 °C/W identical, but RthJA = 50 °C/W vs 62.5 °C/W for TO-220 | Better thermal performance in forced-air or high-power-density layouts; larger footprint required | Select when junction temperature must stay below 130 °C at >10 A continuous with limited heatsink area |
| IPP60R190C7 | 650 V, 190 mΩ, TO-220; CoolMOS™ P7 technology; lower Qg (44 nC) but higher VGS(th) (3.5–5.5 V) | Superior efficiency above 100 kHz; less dv/dt immunity (2.5 V/ns); no integrated Zener protection | Prefer for high-frequency resonant SMPS where gate drive margin and EMI are prioritized over avalanche ruggedness |
Compared with STW15NK50Z, STP15NK50ZFP offers identical electrical specs in a smaller TO-220 footprint and lower cost, while IPP60R190C7 trades avalanche hardness and Zener protection for higher frequency efficiency - making STP15NK50ZFP optimal for cost-sensitive, medium-frequency, high-ruggedness industrial switching.
Availability
STP15NK50ZFP is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and uninterruptible power systems requiring stable component supply and long-term manufacturing continuity.
Supply support for STP15NK50ZFP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.
STP15NK50ZFP belongs to ST's SuperMESH Power MOSFET product line, engineered specifically for high-voltage, high-ruggedness switching in industrial and computing power conversion where reliability under stress and avalanche survivability are mandatory.
FAQ
Is STP15NK50ZFP pin-compatible with STP15NK50Z?
Yes - STP15NK50ZFP and STP15NK50Z share identical TO-220 pinout (G-D-S), marking (P15NK50Z), and electrical specifications. The "FP" suffix denotes ST's RoHS-compliant, halogen-free ECOPACK2 variant with identical thermal and switching performance.
What is the maximum safe operating area (SOA) limitation at 100 °C case temperature?
At TC = 100 °C, the continuous drain current is derated to 8.8 A per datasheet Table 1. The SOA curve (Figure 1) shows that at VDS = 200 V, the device supports ≤ 7 A for DC operation, and pulse current drops to 56 A only for ≤ 10 µs pulses - defined by thermal and avalanche limits.
Does STP15NK50ZFP include an integrated body diode, and what are its recovery characteristics?
Yes - it integrates a fast, soft-recovery N-channel body diode with 1.6 V forward voltage at 14 A and 428 ns reverse recovery time (trr) at TJ = 150 °C. Qrr is 4.2 µC, and IRRM reaches 20 A, enabling use in synchronous rectification and freewheeling paths without external diodes in many topologies.
Can STP15NK50ZFP be driven directly by a 3.3 V microcontroller GPIO?
No - its VGS(th) range is 3.0–4.5 V, and full enhancement requires ≥10 V to achieve 340 mΩ RDS(on). A 3.3 V signal yields high on-resistance (>2 Ω) and excessive heating. A dedicated gate driver (e.g., STMicro's STL135N10L) or level-shifting circuit is required for reliable switching.
STP15NK50ZFP Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperMESH™
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 340mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 106 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2260 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 40W (Tc)
- Operating Temperature:
- -50°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
STP15NK50ZFP FAQ
1.How can I place an order for STP15NK50ZFP through Aetrix?
Please submit a Request for Quotation (RFQ) for STP15NK50ZFP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP15NK50ZFP reliable?
The price and inventory of STP15NK50ZFP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP15NK50ZFP is usually 5 days.
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STP15NK50ZFP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP15NK50ZFP order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP15NK50ZFP?
For technical support, including STP15NK50ZFP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP15NK50ZFP requirements.
6.How does Aetrix verify that STP15NK50ZFP is sourced from the original manufacturer or authorized distributors?
All STP15NK50ZFP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP15NK50ZFP meets industry standards.
7.What is the process for return or replacement of STP15NK50ZFP?
All STP15NK50ZFP units undergo pre-shipment inspection (PSI). If there is an issue with STP15NK50ZFP, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP15NK50ZFP part is unused and in its original packaging.
Return procedure for STP15NK50ZFP:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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