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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP15NM60N

Name: STP15NM60N
Brand: STMicroelectronics
SKU: STP15NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP15NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP15NM60N.pdf

Description:: MOSFET N-CH 600V 14A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:8,850

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Product details

Overview

STP15NM60N from STMicroelectronics is an N-channel 600 V, 14 A, 0.270 Ω R_DS(on) Power MOSFET in TO-220 package, implementing second-generation MDmesh™ technology for high-efficiency switching converters. It features 100% avalanche tested ruggedness, low gate charge (37 nC), and low input capacitance (1250 pF), enabling use in industrial SMPS, PFC stages, and offline AC-DC adapters.

For engineers reviewing the STP15NM60N datasheet, STP15NM60N pinout, STP15NM60N application, or STP15NM60N equivalent, key selection criteria include its 600 V V_DSS, 0.270 Ω on-resistance at V_GS = 10 V, 125 W total dissipation at T_C = 25 °C, 15 V/ns dv/dt capability, and TO-220 thermal resistance of 4.2 °C/W.

Technical Context

This device uses ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its low Q_g (37 nC) and Q_gd/Q_gs ratio (18/6 = 3.0) support fast, controllable turn-on/turn-off with reduced Miller-induced shoot-through risk in hard-switched topologies.

The integrated source-drain diode exhibits 1.3 V forward voltage at 14 A and 390 ns reverse recovery time at 25 °C, making it suitable for freewheeling in continuous conduction mode (CCM) flyback and LLC resonant converters where body diode conduction occurs during dead-time.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands up to 600 V drain-source blocking voltage, suitable for 400 V DC bus applications with safety margin.
R_DS(on)	0.270 Ω @ V_GS = 10 V - Enables <1.5 W conduction loss at 14 A, critical for thermal management in compact power supplies.
I_D (cont)	14 A @ T_C = 25 °C - Supports high-current output stages without parallel devices in mid-power SMPS designs.
Q_g	37 nC - Reduces gate drive power and enables efficient operation with standard 1–2 A gate drivers at 100–300 kHz.
R_thj-case	4.2 °C/W - Allows direct mounting to heatsink for 125 W dissipation at ≤100 °C case temperature rise.
dv/dt Rating	15 V/ns - Ensures reliable operation under fast voltage transients in high-frequency switching circuits.
E_AS	300 mJ - Provides unclamped inductive switching robustness without external snubbers in flyback or forward converters.

Pinout & Package

STP15NM60N is housed in a through-hole TO-220 package with three leads: Gate (pin 1), Drain (pin 2), Source (pin 3). The metal tab (Drain-connected) serves as primary heat transfer path and must be electrically isolated from PCB ground unless circuit topology requires Drain reference.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level gate drive; high input impedance (6 Ω gate resistance) minimizes driver loading.
Pin 2 (Drain)	High-side power switch node	Connected to internal die backside; electrically tied to metal tab-requires insulating washer when mounted to heatsink.
Pin 3 (Source)	Reference return path	Serves as local ground reference for gate drive; carries full load current and must be routed with low-inductance layout.

Key Features

Feature	Design Value
Second-generation MDmesh™ structure	Enables lowest R_DS(on) × Q_g figure-of-merit among 600 V MOSFETs at time of release, improving efficiency in 65–300 kHz converters.
100% avalanche rated	Guarantees single-pulse E_AS = 300 mJ and repetitive I_AS = 6 A, eliminating need for overvoltage clamping in cost-sensitive designs.
Low C_iss/C_oss ratio	C_iss = 1250 pF, C_oss = 100 pF → 12.5:1 ratio improves zero-voltage switching (ZVS) initiation in resonant topologies.
ECOPACK® lead-free package	TO-220 meets RoHS and JEDEC JESD97 standards; Pb-free second-level interconnect ensures compatibility with lead-free reflow and wave soldering.

Applications

Industrial SMPS

Server PSU PFC Stage

Use Scenario: 1–3 kW open-frame switch-mode power supply for factory automation controllers.

IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost PFC front-end.

Use Value: 0.270 Ω R_DS(on) limits conduction loss to <2.7 W at 10 A RMS, enabling >96% PFC efficiency at full load without forced air cooling.

Use Scenario: Active clamp forward or half-bridge DC-DC converter in 1U server power supply.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch operating at 200 kHz with 50% duty cycle.

Use Value: Low Q_g (37 nC) reduces gate drive loss by 35% vs. legacy 600 V MOSFETs, directly improving light-load efficiency.

Offline AC-DC Adapter

UPS Inverter Stage

Use Scenario: 120 W universal-input (90–264 VAC) adapter for telecom equipment.

IC Role / Device Role / Timing Role: Primary switch in quasi-resonant (QR) flyback controller with valley switching.

Use Value: 390 ns t_rr and 5 µC Q_rr minimize body-diode switching loss during dead-time, reducing audible noise and EMI.

Use Scenario: 2 kVA line-interactive UPS with bidirectional DC-AC inverter stage.

IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage driving transformer-coupled sine-wave output.

Use Value: 15 V/ns dv/dt rating prevents false turn-on during high dV/dt commutation events, ensuring clean PWM waveform integrity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF60	600 V, 16 A, R_DS(on) = 0.280 Ω, Q_g = 42 nC, TO-220	Higher current rating but 15% higher gate charge increases driver loss at >200 kHz.	Select when peak load current exceeds 14 A and switching frequency remains ≤150 kHz.
FQP13N60C	600 V, 13 A, R_DS(on) = 0.320 Ω, Q_g = 32 nC, TO-220	Lower Q_g but 19% higher R_DS(on) raises conduction loss by ~18% at full load.	Select when gate drive capability is limited and thermal headroom exists for higher on-state loss.

Compared with STP15NM60N, STP16NF60 offers higher current headroom at the cost of increased switching loss, while FQP13N60C trades lower gate drive demand for higher conduction loss-making STP15NM60N optimal for balanced efficiency across 100–300 kHz industrial SMPS.

Availability

STP15NM60N is available at Aetrix Electronics and suitable for industrial SMPS, server PSU PFC stages, offline AC-DC adapters, and UPS inverter stages requiring stable component supply and long-term manufacturability.

Supply support for STP15NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STP15NM60N belongs to the MDmesh™ high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power conversion in industrial and computing power supplies.

FAQ

Is STP15NM60N suitable for 230 VAC input PFC applications?

Yes. With 600 V V_DSS, 14 A continuous current, and 0.270 Ω R_DS(on), STP15NM60N supports boost PFC stages delivering up to 2.5 kW at 230 VAC input. Its 15 V/ns dv/dt rating and 100% avalanche testing ensure robustness against line surges and inductive kickback in CCM operation.

What is the maximum recommended gate drive voltage?

The absolute maximum V_GS is ±25 V, but ST recommends 10 V for full enhancement and minimal R_DS(on). Driving above 15 V provides negligible on-resistance reduction while increasing gate oxide stress and risk of spurious turn-on due to noise coupling.

Does STP15NM60N require a heatsink in 125 W operation?

Yes. With R_thj-case = 4.2 °C/W and maximum T_j = 150 °C, a 125 W dissipation requires ≤100 °C case-to-ambient rise. A heatsink with ≤2.0 °C/W thermal resistance (including interface material) is required to maintain safe junction temperature at full load.

Can STP15NM60N replace STP12NM60 in existing designs?

Yes, with qualification. STP15NM60N offers 17% lower R_DS(on) (0.270 Ω vs. 0.320 Ω) and identical TO-220 pinout and voltage rating. However, its higher Q_g (37 nC vs. 32 nC) may increase gate drive loss-verify driver capability and thermal margin before drop-in replacement.

STP15NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 299mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 37 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1250 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP15NM60N FAQ

1.How can I place an order for STP15NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STP15NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP15NM60N reliable?

The price and inventory of STP15NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP15NM60N is usually 5 days.

3.What payment methods are accepted for STP15NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP15NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP15NM60N?

STP15NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP15NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP15NM60N?

For technical support, including STP15NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP15NM60N requirements.

6.How does Aetrix verify that STP15NM60N is sourced from the original manufacturer or authorized distributors?

All STP15NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP15NM60N meets industry standards.

7.What is the process for return or replacement of STP15NM60N?

All STP15NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STP15NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP15NM60N part is unused and in its original packaging.

Return procedure for STP15NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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