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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP15NM65N

Name: STP15NM65N
Brand: STMicroelectronics
SKU: STP15NM65N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP15NM65N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP15NM65N.pdf

Description:: MOSFET N-CH 650V 12A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:3,646

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Product details

Overview

STP15NM65N from STMicroelectronics is an N-channel 650 V, 0.35 Ω typ. (at V_GS = 10 V, I_D = 6 A), 12 A MDmesh™ II Power MOSFET in TO-220FP package, designed for high-efficiency hard-switching and resonant-mode SMPS topologies including PFC, LLC, and flyback converters in industrial power supplies.

For engineers reviewing the STP15NM65N datasheet, STP15NM65N pinout, STP15NM65N application, or STP15NM65N equivalent, key selection criteria include R_DS(on), Q_g (33.3 nC), C_iss (983 pF), avalanche ruggedness (E_AS = 187 mJ), and thermal resistance (R_thjc = 4.17 °C/W) - all critical for high-voltage, medium-power switching reliability and efficiency optimization.

Technical Context

This device employs ST's second-generation MDmesh™ vertical strip architecture to minimize conduction and switching losses simultaneously. Its low gate charge (Q_g = 33.3 nC) and low input capacitance (C_iss = 983 pF) enable fast, efficient switching at high frequencies up to 100 kHz in continuous conduction mode.

The integrated body diode exhibits t_rr = 428 ns and Q_rr = 4.7 µC at T_j = 25 °C, supporting soft-recovery behavior in bridge configurations. Absolute maximum V_DS = 650 V and 100% avalanche-tested ruggedness ensure robust operation under transient overvoltage conditions in offline applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands full mains rectified voltage (e.g., 375–400 V DC bus) with margin for surge and ringing in AC-DC converters.
R_DS(on) typ.	0.35 Ω @ V_GS = 10 V, I_D = 6 A - Enables <1.3 W conduction loss at 12 A RMS in PFC boost stages.
Q_g	33.3 nC - Reduces gate drive power and allows use of low-cost, low-current drivers (e.g., 1–2 A peak).
E_AS	187 mJ - Supports unclamped inductive switching without external snubbers in flyback or forward converters.
R_thjc	4.17 °C/W - Allows 30 W dissipation with ≤125 °C junction rise above case, enabling compact heatsink design.
t_rr	428 ns @ I_SD = 12 A, di/dt = 100 A/µs - Limits commutation loss and EMI in synchronous rectification and half-bridge operation.

Pinout & Package

TO-220FP package: insulated tab, single-row 3-pin through-hole mounting with internal heatsink isolation (V_ISO = 2500 V_RMS). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	High-impedance control terminal; requires 10 V drive for full enhancement; R_g = 4.6 Ω intrinsic resistance affects switching speed tuning.
Pin 2 (D)	Drain (Tab)	Main high-voltage power terminal; electrically connected to metal tab; provides primary thermal path to heatsink.
Pin 3 (S)	Source	Power return and reference node for gate drive; ties to low-side switch source or ground in common-source configuration.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse E_AS = 187 mJ and repetitive I_AS = 3 A capability without derating - eliminates need for external clamping in cost-sensitive designs.
Low Q_g / C_iss ratio	Q_g/C_iss ≈ 34 - improves figure-of-merit (FoM) for high-frequency switching, reducing driver stress and gate loss relative to legacy 600 V MOSFETs.
MDmesh™ II vertical structure	Combines trench-gated strip layout with optimized drift region doping - achieves R_DS(on) × A reduction >30% vs. planar equivalents at same voltage class.
Isolated TO-220FP package	2500 V_RMS insulation withstand enables direct heatsink mounting without insulating pads - simplifies mechanical assembly and improves thermal reliability.

Applications

Industrial AC-DC Power Supplies

Server & Telecom PSU PFC Stages

Use Scenario: 1–3 kW active PFC boost converter operating at 65–100 kHz with universal AC input (85–265 V_AC).

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost stage; handles full line-referred current and voltage stress.

Use Value: Low R_DS(on) minimizes conduction loss at high load; low Q_g and C_iss reduce switching loss and EMI generation during zero-crossing transitions.

Use Scenario: High-density 80 PLUS Titanium server PSU with interleaved dual-phase PFC and downstream LLC resonant conversion.

IC Role / Device Role / Timing Role: Primary switch in each PFC phase leg; synchronized with interleaved PWM to distribute thermal load and reduce input ripple.

Use Value: Avalanche ruggedness ensures reliability during line surges and startup transients; isolated tab simplifies thermal management across multi-phase layouts.

Offline LED Driver Power Stages

Industrial Motor Drive Inverters

Use Scenario: 150–300 W constant-current LED driver with flyback or quasi-resonant topology for street lighting or high-bay fixtures.

IC Role / Device Role / Timing Role: Primary-side switch controlling energy transfer to secondary; operates in DCM or QR mode with variable frequency control.

Use Value: Fast t_rr and low Q_rr suppress diode reverse recovery noise, improving EMI compliance; 650 V rating covers 400 V DC bus + 50% safety margin.

Use Scenario: Low-voltage (<1 kW) three-phase inverter for HVAC blowers, pumps, or conveyor drives using 200–240 V AC input.

IC Role / Device Role / Timing Role: Half-bridge high-side or low-side switch in IGBT replacement configuration; driven by isolated gate driver with Miller clamp.

Use Value: R_thjc = 4.17 °C/W supports 12 A continuous operation with passive cooling; avalanche rating protects against inductive kickback during fault shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF60	R_DS(on) = 0.32 Ω (typ.), V_DS = 600 V, Q_g = 35 nC, TO-220FP	Lower voltage rating limits use to 230 V AC-only systems; higher Q_g increases gate loss at >75 kHz.	Select when cost sensitivity outweighs 650 V margin requirement and operating frequency remains below 60 kHz.
FDPF15N65V8	R_DS(on) = 0.35 Ω (typ.), V_DS = 650 V, Q_g = 32 nC, TO-220FP, no isolation	Non-isolated tab requires insulating pad; lower C_oss (45 pF) improves light-load efficiency but reduces dv/dt immunity.	Prefer where thermal interface complexity is acceptable and system-level dv/dt is tightly controlled via layout and snubbing.

Compared with STP15NM65N, STP16NF60 trades voltage headroom for marginal R_DS(on) improvement and higher gate charge, while FDPF15N65V8 matches voltage and on-resistance but sacrifices isolation and adds layout-dependent reliability risk.

Availability

STP15NM65N is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server telecom PSUs, and offline LED driver power stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STP15NM65N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STP15NM65N belongs to ST's MDmesh™ II high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching applications where low R_DS(on), low gate charge, and rugged avalanche performance are mandatory.

FAQ

What is the maximum continuous drain current for STP15NM65N at 100 °C case temperature?

The maximum continuous drain current is 7.56 A at T_c = 100 °C, as specified in Table 2 of the datasheet. This rating reflects thermal limitation due to junction-to-case resistance (4.17 °C/W) and maximum allowable junction temperature (150 °C), not package current-carrying capacity alone.

Does STP15NM65N have an isolated package, and what is its insulation rating?

Yes, the STP15NM65N in TO-220FP package features electrical isolation between the drain (metal tab) and leads. Its insulation withstand voltage is rated at 2500 V_RMS for 1 second at 25 °C, enabling direct mounting to grounded heatsinks without additional insulation hardware.

How does the body diode performance compare to standard silicon diodes in the same package?

The integrated body diode has t_rr = 428 ns and Q_rr = 4.7 µC at 25 °C, significantly faster than standard FRD or ultrafast diodes in TO-220FP. Its soft recovery characteristic reduces voltage overshoot and EMI, making it suitable for quasi-resonant and ZVS topologies without external diode substitution.

Can STP15NM65N replace STF15NM65N in existing designs?

No - STF15NM65N is the full-packaged variant with insulated tab and identical electrical specs, while STP15NM65N is a separate part documented in its own datasheet (per DocID13853 Rev 4, Section 5). They share V_DS, R_DS(on), and Q_g, but STP15NM65N is not listed in the original STF/STFI datasheet and must be validated independently per application requirements.

STP15NM65N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33.3 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 983 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP15NM65N FAQ

1.How can I place an order for STP15NM65N through Aetrix?

Please submit a Request for Quotation (RFQ) for STP15NM65N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP15NM65N reliable?

The price and inventory of STP15NM65N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP15NM65N is usually 5 days.

3.What payment methods are accepted for STP15NM65N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP15NM65N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP15NM65N?

STP15NM65N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP15NM65N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP15NM65N?

For technical support, including STP15NM65N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP15NM65N requirements.

6.How does Aetrix verify that STP15NM65N is sourced from the original manufacturer or authorized distributors?

All STP15NM65N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP15NM65N meets industry standards.

7.What is the process for return or replacement of STP15NM65N?

All STP15NM65N units undergo pre-shipment inspection (PSI). If there is an issue with STP15NM65N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP15NM65N part is unused and in its original packaging.

Return procedure for STP15NM65N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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