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STMicroelectronics STP160N3LL

Part No.:
STP160N3LL
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixSTP160N3LL.pdf
Description:
MOSFET N-CH 30V 120A TO220
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:248

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Product details

Overview

STP160N3LL from STMicroelectronics is an N-channel 30 V, 120 A Power MOSFET in TO-220 package, featuring 2.5 mΩ typ. RDS(on) at VGS = 10 V, 42 nC total gate charge, and 136 W power dissipation-designed for high-efficiency DC-DC converters and motor control switches in industrial power supplies.

For engineers reviewing the STP160N3LL datasheet, STP160N3LL pinout, STP160N3LL application, or STP160N3LL equivalent, key selection criteria include its low RDS(on), high pulsed current capability (480 A), avalanche ruggedness (150 mJ), thermal resistance (1.1 °C/W), and TO-220 mechanical compatibility with standard heatsinks.

Technical Context

This device uses STripFET™ H6 trench-gate technology to achieve ultra-low on-resistance and reduced gate charge. Its 30 V VDS rating and ±20 V VGS support robust gate drive in 24 V systems, while the 1.1 °C/W Rth(j-case) enables high continuous current operation up to 112 A at 100 °C case temperature.

The integrated source-drain diode delivers 1.1 V forward voltage at 60 A and fast recovery (trr = 28.6 ns, Qrr = 22.8 nC), making it suitable for synchronous rectification and hard-switched topologies where body diode performance impacts efficiency.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - supports 24 V nominal bus systems with margin for transients
RDS(on) max3.2 mΩ at VGS = 10 V - limits conduction loss to ≤4.6 W at 120 A
ID cont.120 A at Tcase = 25 °C - package-limited current for high-power switching
EAS150 mJ - withstands unclamped inductive switching events without failure
Qg42 nC - enables efficient 100 kHz+ switching with moderate gate driver strength
Rth(j-case)1.1 °C/W - allows 123 °C junction rise at full 136 W dissipation with 25 °C heatsink
trr28.6 ns - minimizes reverse recovery loss in bridge-leg configurations

Pinout & Package

TO-220 type A package with isolated tab (drain-connected), standard 3-pin vertical mounting configuration. Mounting hole Ø3.75–3.85 mm, lead pitch 2.54 mm, heatsink interface area 15.5 × 10.2 mm.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current path output / heatsink connectionElectrically connected to metal tab; requires insulating washer when mounted to grounded heatsink
SourceReference node for gate drive and current sensingLow-inductance return path; used for shunt-based current monitoring in half-bridge legs
GateControl terminal for channel modulationHigh-impedance input requiring <42 nC charge for full enhancement; sensitive to ESD

Key Features

FeatureDesign Value
Ultra-low RDS(on)2.5 mΩ typ. at 10 V gate drive reduces I²R losses by >30% vs. legacy TO-220 MOSFETs in 12–24 V systems
Low gate charge42 nC total charge enables <1 W gate drive loss at 200 kHz with 12 V supply and 5 Ω driver
High avalanche energy rating150 mJ single-pulse rating supports reliable operation in inductive load switching without external snubbers
Fast body diode recovery28.6 ns trr and 22.8 nC Qrr reduce cross-conduction loss in synchronous buck and half-bridge topologies

Applications

DC-DC Converter Primary SwitchMotor Drive High-Side Switch

Use Scenario: 24 V input, 400 kHz synchronous buck converter delivering 100 A to FPGA core rail.

IC Role / Device Role / Timing Role: Main high-side power switch handling full load current with minimal conduction and switching loss.

Use Value: 2.5 mΩ RDS(on) limits conduction loss to 25 W; 42 nC Qg enables clean 10 ns turn-on with 12 V gate drive.

Use Scenario: 24 V brushed DC motor controller with PWM frequency up to 20 kHz.

IC Role / Device Role / Timing Role: High-current, high-duty-cycle switching element in H-bridge upper arm.

Use Value: 112 A continuous rating at 100 °C case ensures thermal headroom; 150 mJ EAS prevents failure during motor stall events.

Industrial Power Supply Output StageHot-Swap ORing FET

Use Scenario: Redundant 24 V/60 A AC-DC power supply with active ORing and current sharing.

IC Role / Device Role / Timing Role: Low-loss pass transistor replacing Schottky diodes in ideal diode configuration.

Use Value: 1.1 V VSD at 60 A cuts forward drop by 60% vs. 100 A Schottky; fast trr avoids shoot-through during switchover.

Use Scenario: 30 V backplane hot-swap circuit protecting against inrush and reverse-current faults.

IC Role / Device Role / Timing Role: Controlled turn-on switch enabling soft-start and reverse-current blocking.

Use Value: ±20 V VGS rating supports precise gate control; 3.2 mΩ RDS(on) max ensures <120 mV drop at 37.5 A fault current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF1404PBFRDS(on) = 4.0 mΩ max (higher conduction loss); Qg = 131 nC (slower switching)Lower switching frequency suitability (≤50 kHz); less efficient at high currentPrefer when gate drive strength is limited and thermal margin exists
IXTH120N30L2VDS = 300 V (over-rated); RDS(on) = 3.8 mΩ; TO-247 package (larger footprint)Designed for higher-voltage systems; not optimized for 24 V conduction efficiencyChoose only if system requires 300 V rating or TO-247 mechanical fit

Compared with IRF1404PBF and IXTH120N30L2, STP160N3LL delivers superior conduction efficiency at 24 V, lower gate drive demand, and TO-220 thermal performance optimized for industrial power density-making it the preferred choice for cost-sensitive, high-current 30 V switching applications.

Availability

STP160N3LL is available at Aetrix Electronics and suitable for industrial power supplies, motor drives, and DC-DC converters requiring stable component supply, long-term manufacturability, and qualified automotive-grade alternatives.

Supply support for STP160N3LL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for industrial, automotive, and consumer markets.

The STripFET™ H6 product line targets high-efficiency power conversion, emphasizing ultra-low RDS(on), fast switching, and ruggedness in standard packages for industrial and computing power stages.

FAQ

Is STP160N3LL suitable for synchronous rectification?

Yes. Its integrated source-drain diode has 1.1 V forward voltage at 60 A and 28.6 ns reverse recovery time, enabling efficient synchronous rectification in buck converters up to 200 kHz. Gate threshold of 1–2.5 V allows direct control by standard logic-level drivers without level-shifting.

What is the maximum safe operating area (SOA) at 100 °C case temperature?

At Tcase = 100 °C, the SOA limits continuous drain current to 112 A (per datasheet Table 2). For pulse operation, the device supports 480 A pulses with duty cycle and pulse width constrained by the SOA curve in Figure 2-ensuring safe operation under transient overload conditions.

Does STP160N3LL require a gate resistor for stability?

A gate resistor (typically 2.2–10 Ω) is recommended to dampen ringing caused by PCB trace inductance and intrinsic gate resistance (1 Ω). Without it, overshoot exceeding ±20 V VGS may trigger parasitic turn-on or damage the gate oxide during fast switching transitions.

Can STP160N3LL be paralleled for higher current capacity?

Yes-its positive temperature coefficient of RDS(on) (see Figure 10) ensures inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical layout, and individual gate resistors to prevent oscillation. Derate total current by 15% for thermal coupling effects in shared heatsink configurations.

STP160N3LL Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™ H6
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
3.2mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
42 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3500 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
136W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220

STP160N3LL FAQ

1.How can I place an order for STP160N3LL through Aetrix?

Please submit a Request for Quotation (RFQ) for STP160N3LL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP160N3LL reliable?

The price and inventory of STP160N3LL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP160N3LL is usually 5 days.

3.What payment methods are accepted for STP160N3LL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP160N3LL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP160N3LL?

STP160N3LL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP160N3LL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP160N3LL?

For technical support, including STP160N3LL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP160N3LL requirements.

6.How does Aetrix verify that STP160N3LL is sourced from the original manufacturer or authorized distributors?

All STP160N3LL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP160N3LL meets industry standards.

7.What is the process for return or replacement of STP160N3LL?

All STP160N3LL units undergo pre-shipment inspection (PSI). If there is an issue with STP160N3LL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP160N3LL part is unused and in its original packaging.

Return procedure for STP160N3LL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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