STMicroelectronics STP160N75F3

Overview

STP160N75F3 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET fabricated using STripFET™ F3 technology, designed for high-current switching in DC-DC converters, motor drives, and power supplies. It delivers 75 V V_DS, 4 mΩ R_DS(on) (max) at V_GS = 10 V, 120 A continuous drain current (T_C = 25 °C), and 600 mJ single-pulse avalanche energy - enabling robust operation in hard-switching industrial inverters.

For engineers reviewing the STP160N75F3 datasheet, STP160N75F3 pinout, STP160N75F3 application, or STP160N75F3 equivalent, key selection criteria include its TO-220 package thermal resistance (0.45 °C/W j-case), gate charge (85 nC), diode recovery performance (70 ns t_rr), and 20 V/ns dv/dt ruggedness under inductive switching.

Technical Context

This MOSFET employs a trench-gate STripFET™ F3 process to achieve ultra-low on-resistance while maintaining high cell density and avalanche ruggedness. Its 100% avalanche-tested construction ensures reliability in unclamped inductive load conditions, with a 600 mJ E_AS rating at T_J = 25 °C, ID = 60 A, and V_DD = 25 V.

The device features low dynamic parameters critical for high-frequency switching: 6750 pF C_iss, 26 nC Q_gd, and 22 ns turn-on delay (V_DD = 37.5 V, I_D = 60 A, R_G = 4.7 Ω). Its source-drain diode supports synchronous rectification with 1.5 V V_SD at I_SD = 120 A and fast 70 ns reverse recovery time.

Key Specifications

Pinout & Package

STP160N75F3 is housed in a through-hole TO-220 package with three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain and must be isolated from heatsink unless circuit topology permits common-drain configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP160N75NF3 and IRFP150NPBF, STP160N75F3 offers optimal balance of low R_DS(on), controlled Q_g, and guaranteed avalanche ruggedness - making it preferred for high-reliability 100 kHz+ switching in industrial and renewable energy systems.

Availability

STP160N75F3 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for STP160N75F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

STP160N75F3 belongs to the STripFET™ F3 power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 48–75 V DC bus applications demanding low R_DS(on), fast switching, and rugged avalanche behavior.

FAQ

Is STP160N75F3 suitable for synchronous rectification?

Yes - its body diode exhibits 70 ns reverse recovery time (t_rr) and 4.2 A peak reverse recovery current (I_RRM) at 100 A/µs di/dt, enabling efficient synchronous rectification in LLC and phase-shifted full-bridge topologies. However, external Schottky diodes remain preferable for <100 ns t_rr requirements.

What is the maximum safe operating temperature for continuous operation?

The absolute maximum junction temperature is 175 °C, but continuous operation above 150 °C degrades long-term reliability. With TO-220 package R_th(j-case) = 0.45 °C/W, sustained 120 A drain current requires case temperature ≤ 85 °C - achievable only with forced-air cooling and ≥ 100 cm² copper area on PCB.

Does STP160N75F3 require a gate resistor for stability?

Yes - a 4.7 Ω gate resistor is specified in the datasheet for switching time characterization and suppresses gate oscillation. For 100 kHz+ operation, a 2.2–10 Ω non-inductive SMD resistor placed adjacent to the gate pin is recommended to control dV/dt and prevent Miller-induced turn-on during high di/dt transitions.

Can STP160N75F3 replace STP155N75F3 in existing designs?

Yes - both share identical TO-220 package, pinout, and 75 V V_DS rating. STP160N75F3 offers lower R_DS(on) (4 mΩ vs. 4.5 mΩ) and higher I_D (120 A vs. 110 A), delivering improved thermal margin and efficiency. No layout or drive circuit changes are needed for drop-in replacement.