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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP16NK60Z

Name: STP16NK60Z
Brand: STMicroelectronics
SKU: STP16NK60Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP16NK60Z

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP16NK60Z.pdf

Description:: MOSFET N-CH 600V 14A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:3,156

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Product details

Overview

STP16NK60Z from STMicroelectronics is an N-channel 600 V, 0.38 Ω (typ), 14 A SuperMESH™ Power MOSFET in TO-220 package, featuring integrated gate-source Zener protection (±30 V), 100% avalanche tested operation, and 4.5 V/ns peak diode recovery dv/dt capability - deployed in high-voltage AC-DC SMPS primary-side switching.

For engineers reviewing the STP16NK60Z datasheet, STP16NK60Z pinout, STP16NK60Z application, or STP16NK60Z equivalent, key selection criteria include R_DS(on) at 10 V, unclamped inductive avalanche energy (360 mJ), thermal resistance (0.66 °C/W j-case), Zener-protected gate integrity, and TO-220 mechanical compatibility with standard heatsinks.

Technical Context

This device implements ST's SuperMESH™ strip-based layout to achieve lower on-resistance and superior dv/dt immunity versus prior PowerMESH™ generations. Its internal structure integrates back-to-back gate-source Zener diodes rated at 30 V breakdown for ESD and transient protection without external components.

The MOSFET operates with a gate threshold voltage of 3.0–4.5 V (typ 3.75 V) and exhibits low dynamic parameters: C_iss = 2650 pF, Q_g = 86 nC, and t_f = 15 ns - enabling efficient hard-switching in 50–100 kHz flyback and resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports 400 VAC input rectified systems with ≥20% safety margin
R_DS(on) max	0.42 Ω @ V_GS = 10 V, I_D = 7 A - enables <1.5 W conduction loss at 14 A
I_D continuous	14 A @ T_C = 25 °C - limited by TO-220 package thermal capacity
E_AS	360 mJ - withstands single-pulse unclamped inductive energy without failure
dv/dt rating	4.5 V/ns - ensures robustness against fast voltage transients during turn-off
Q_g	86 nC - determines gate driver current requirement (~1.8 A avg for 47 Ω, 100 ns rise)
R_thj-case	0.66 °C/W - allows ~220 °C junction rise at 190 W dissipation, critical for heatsink sizing

Pinout & Package

STP16NK60Z uses a standard TO-220 package with isolated tab (drain-connected), 3-pin vertical mounting configuration, and JEDEC MS-001 compliant outline. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate control terminal	Receives 10 V logic-level drive; protected by integrated 30 V Zener to prevent overvoltage damage
Pin 2 (D)	Drain (case-connected)	High-side switching node; electrically tied to metal tab - requires insulating washer when mounted to heatsink
Pin 3 (S)	Source return path	Reference for gate drive and current sensing; connects to power ground or current-sense resistor

Key Features

Feature	Design Value
Zener-protected gate	Integrated ±30 V gate-source Zener eliminates need for external TVS or clamping diodes
100% avalanche tested	Each unit validated for unclamped inductive switching stress up to 360 mJ
Low C_oss & C_rss	285 pF C_oss, 62 pF C_rss - reduces switching losses and improves EMI behavior
High dv/dt immunity	4.5 V/ns rated recovery slope - prevents false turn-on in high-noise bridge configurations
SuperMESH™ layout	Optimized cell geometry delivers 0.38 Ω R_DS(on) at 600 V - 15% lower than legacy PowerMESH™

Applications

Server PSU Primary Switch

Industrial Flyback Converter

Use Scenario: 80+ Gold-rated 1 kW server power supply operating at 65 kHz with universal AC input.

IC Role / Device Role / Timing Role: High-side main switch in quasi-resonant flyback topology; handles 400–450 VDC bus with 14 A peak current.

Use Value: 0.38 Ω R_DS(on) minimizes conduction loss at full load; 360 mJ E_AS ensures reliability during output short-circuit events.

Use Scenario: 24 V/15 A industrial control power module with wide input range (85–264 VAC).

IC Role / Device Role / Timing Role: Primary-side MOSFET in fixed-frequency 60 kHz flyback; driven by UC3845-based controller.

Use Value: 4.5 V/ns dv/dt rating prevents spurious turn-on during transformer leakage spike; TO-220 footprint simplifies PCB layout and thermal management.

LED Streetlight Driver

APD Bias Supply

Use Scenario: Outdoor LED streetlight with active PFC + LLC half-bridge, requiring high-reliability primary switch.

IC Role / Device Role / Timing Role: PFC boost switch handling 14 A RMS current at 100 kHz; thermally coupled to aluminum housing.

Use Value: 0.66 °C/W R_thj-case enables direct mounting to enclosure wall; Zener protection sustains repeated lightning-induced gate transients.

Use Scenario: Avalanche photodiode (APD) bias generator in fiber-optic test equipment requiring ultra-stable 120–200 V output.

IC Role / Device Role / Timing Role: Linear-regulated high-voltage pass element operating in constant-current mode with tight ripple control.

Use Value: Low C_iss (2650 pF) and stable V_GS(th) (3.75 V typ) ensure precise gate voltage control and minimal output noise coupling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099C7	650 V, 0.099 Ω, 30 A, TO-220; CoolMOS™ C7 technology; lower R_DS(on) but higher Q_g (110 nC)	Higher efficiency at light loads due to lower capacitance; requires stronger gate driver	Select for >100 kHz designs where conduction loss dominates; verify SOA at 14 A pulsed current
STW16NK60Z	Identical electrical specs; TO-247 package; R_thj-case = 0.66 °C/W (same), but higher power handling due to larger copper mass	Preferred for >150 W continuous operation; compatible with same gate drive and layout	Choose when thermal headroom is constrained and forced-air cooling is unavailable

Compared with IPP60R099C7, STP16NK60Z offers lower gate charge and proven avalanche ruggedness at cost-sensitive 600 V designs; versus STW16NK60Z, it trades package size for identical performance in space-constrained TO-220 layouts.

Availability

STP16NK60Z is available at Aetrix Electronics and suitable for server PSUs, industrial flyback converters, LED streetlight drivers, and APD bias supplies requiring stable component supply across multi-year production cycles.

Supply support for STP16NK60Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STP16NK60Z belongs to the SuperMESH™ high-voltage MOSFET product line, engineered specifically for rugged, high-efficiency switching in offline AC-DC power conversion up to 600 V.

FAQ

Is STP16NK60Z suitable for zero-voltage switching (ZVS) topologies?

Yes - its low C_oss (285 pF) and controlled Q_gd/Q_gs ratio (46 nC / 17 nC ≈ 2.7) support reliable ZVS turn-on in LLC resonant converters. The 4.5 V/ns dv/dt rating ensures gate remains stable during resonant node transitions, and the 360 mJ E_AS provides margin against accidental hard-switching events during startup or fault conditions.

What is the maximum safe gate resistor value for driving STP16NK60Z at 100 kHz?

A 47 Ω gate resistor is recommended per the datasheet switching test circuit. At 100 kHz with 50% duty cycle, this yields ~100 ns rise/fall times and limits peak gate current to ~210 mA (V_GS = 12 V). Values above 100 Ω increase switching losses significantly; below 22 Ω may cause ringing due to PCB inductance interacting with Q_gd.

Does STP16NK60Z require external gate protection in a 400 VAC input system?

No - the integrated gate-source Zener diodes (BVGSO = 30 V) provide sufficient protection against typical gate transients in properly designed 400 VDC bus systems. External TVS is unnecessary unless subjected to >1 kV EFT bursts directly at the gate node; layout best practices (short gate traces, local 100 nF decoupling) remain essential.

Can STP16NK60Z replace STP12NK60Z in existing designs?

Yes - STP16NK60Z is a direct upgrade: both share TO-220 package, 600 V rating, and pinout. STP16NK60Z offers 22% lower R_DS(on) (0.38 Ω vs 0.48 Ω), reduced Q_g (86 nC vs 95 nC), and improved avalanche energy (360 mJ vs 280 mJ), enabling higher efficiency and better fault tolerance without layout changes.

STP16NK60Z Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 420mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2650 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP16NK60Z FAQ

1.How can I place an order for STP16NK60Z through Aetrix?

Please submit a Request for Quotation (RFQ) for STP16NK60Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP16NK60Z reliable?

The price and inventory of STP16NK60Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP16NK60Z is usually 5 days.

3.What payment methods are accepted for STP16NK60Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP16NK60Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP16NK60Z?

STP16NK60Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP16NK60Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP16NK60Z?

For technical support, including STP16NK60Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP16NK60Z requirements.

6.How does Aetrix verify that STP16NK60Z is sourced from the original manufacturer or authorized distributors?

All STP16NK60Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP16NK60Z meets industry standards.

7.What is the process for return or replacement of STP16NK60Z?

All STP16NK60Z units undergo pre-shipment inspection (PSI). If there is an issue with STP16NK60Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP16NK60Z part is unused and in its original packaging.

Return procedure for STP16NK60Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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