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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP16NM50N

Name: STP16NM50N
Brand: STMicroelectronics
SKU: STP16NM50N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP16NM50N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP16NM50N.pdf

Description:: MOSFET N-CH 500V 15A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP16NM50N from STMicroelectronics is an N-channel 500 V, 0.21 Ω (typ), 15 A MDmesh™ II Power MOSFET in TO-220 package, designed for high-efficiency switching converters operating at 100–500 kHz. It features 100% avalanche tested ruggedness, low gate charge (38 nC), and low input capacitance (1200 pF), enabling fast switching with reduced gate drive loss in offline SMPS and PFC stages.

For engineers reviewing the STP16NM50N datasheet, STP16NM50N pinout, STP16NM50N application, or STP16NM50N equivalent, key selection criteria include R_DS(on) at 10 V, avalanche energy rating (470 mJ), thermal resistance (1.0 °C/W junction-to-case), and safe operating area under inductive switching - all critical for industrial power supply and motor control designs.

Technical Context

This device implements ST's second-generation MDmesh™ vertical structure combined with a strip layout to minimize conduction and switching losses simultaneously. Its 500 V V_DSS, 15 A I_D rating and 30 V/ns dv/dt capability support operation in hard-switched flyback, forward, and resonant topologies up to 250 V DC bus.

The MOSFET integrates a robust body diode with 15 A continuous source-drain current, 400 ns reverse recovery time (T_j = 25°C), and 5 µC Q_rr, making it suitable for synchronous rectification and freewheeling paths where diode recovery stress must be controlled.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - Withstands 80% of rated voltage during unclamped inductive switching without breakdown
R_DS(on) max	0.26 Ω @ V_GS = 10 V, T_C = 25°C - Enables <1.95 W conduction loss at 15 A, critical for thermal management
Q_g	38 nC - Determines gate driver power requirement and switching speed in 100–300 kHz converters
E_AS	470 mJ - Single-pulse avalanche energy rating ensures reliability during transient overvoltage events
R_thj-case	1.0 °C/W - Enables 125 W dissipation at ΔT = 125°C, supporting high-power density TO-220 layouts
t_r/t_f	15 ns / 16 ns @ V_DD = 250 V, I_D = 7.5 A - Defines minimum dead-time and EMI profile in half-bridge designs

Pinout & Package

STP16NM50N uses the standard TO-220 package with 3 leads: Gate (pin 1), Drain (pin 2), Source (pin 3). The metal tab (Drain-connected) serves as primary heat transfer surface and must be electrically isolated from heatsink unless circuit topology permits common-Drain mounting.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	High-impedance MOSFET control terminal; requires ≤±25 V bias and low-inductance gate loop for stable 38 nC switching
Pin 2 (D)	Drain	Main high-voltage power terminal; internally connected to metal tab; must be insulated from heatsink unless referenced to same potential
Pin 3 (S)	Source	Power return path and gate reference node; carries full load current and diode reverse recovery current (up to 24 A I_RRM)

Key Features

Feature	Design Value
MDmesh™ II vertical structure	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs first-gen devices, improving efficiency in 100–500 kHz SMPS
100% avalanche tested	Guarantees single-pulse E_AS ≥ 470 mJ at T_j = 25°C, eliminating need for external snubbers in flyback clamp circuits
Low C_iss (1200 pF)	Minimizes Miller effect and gate drive power loss, enabling use with low-current drivers (e.g., 1 A peak)
ECOPACK® RoHS-compliant	Lead-free second-level interconnect meets JEDEC JESD97; compatible with standard SnPb and lead-free reflow profiles

Applications

Industrial AC-DC Power Supplies

Server & Telecom SMPS

Use Scenario: 500 W active-clamp forward converter operating at 200 kHz with 375 V DC bus.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 15 A peak drain current and 400 V transient spikes.

Use Value: 0.21 Ω R_DS(on) limits conduction loss to <2.4 W; 470 mJ E_AS absorbs clamp energy without derating.

Use Scenario: 1 kW LLC resonant converter with synchronous rectification in 48 V telecom rectifier.

IC Role / Device Role / Timing Role: High-frequency switching FET in half-bridge leg, switching at 300 kHz with 15 V gate drive.

Use Value: 38 nC Q_g enables clean turn-on with 1 A driver; 15 ns rise time supports tight dead-time control.

Motor Drive Inverters

LED Driver Power Stages

Use Scenario: 3-phase 750 W BLDC inverter with discrete gate drivers and 250 V DC link.

IC Role / Device Role / Timing Role: Low-side switching element conducting 15 A RMS with 60 A pulsed current during commutation.

Use Value: 60 A I_DM rating handles motor surge currents; 400 ns t_rr prevents cross-conduction in 10 kHz PWM.

Use Scenario: Constant-current 200 W LED driver using buck-boost topology with 400 V input.

IC Role / Device Role / Timing Role: Main switching transistor controlling 15 A LED string current in discontinuous conduction mode.

Use Value: 500 V V_DSS accommodates 400 V line + 20% margin; 1.0 °C/W R_thj-case allows compact heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15NF50	R_DS(on) = 0.32 Ω (max), Q_g = 45 nC, no avalanche rating specified	Lacks 100% avalanche testing and has higher conduction loss - unsuitable for unclamped inductive loads	Acceptable only in low-stress, well-clamped topologies with ample thermal margin
FQP13N50C	R_DS(on) = 0.36 Ω (max), Q_g = 42 nC, E_AS = 320 mJ	Lower avalanche energy and higher R_DS(on) reduce reliability in high-dV/dt environments	Requires larger heatsink and additional clamping; not recommended for 250+ V DC bus designs

Compared with STP15NF50 and FQP13N50C, STP16NM50N delivers superior efficiency via lower R_DS(on) and Q_g, plus guaranteed avalanche ruggedness - essential for industrial-grade power supplies where field reliability outweighs marginal BOM cost savings.

Availability

STP16NM50N is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server/telecom SMPS, and motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STP16NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power conversion in 100–500 kHz offline and DC-DC applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The STP16NM50N supports 9.4 A continuous drain current at T_C = 100°C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the TO-220 package and must be applied when ambient temperature or heatsink performance reduces case temperature control.

Is the body diode suitable for synchronous rectification?

Yes - the integrated source-drain diode supports 15 A continuous and 60 A pulsed current, with 400 ns reverse recovery time and 5 µC Q_rr at 25°C. However, its V_SD = 1.3 V forward drop and moderate t_rr make it less efficient than discrete Schottky diodes in low-voltage outputs; best suited for >24 V secondary-side rectification.

Does STP16NM50N require a gate resistor for stability?

Yes - a gate resistor (typically 4.7 Ω) is required to dampen ringing caused by PCB trace inductance interacting with C_iss and C_rss. Figure 18 in the datasheet confirms 4.7 Ω as the test condition for switching time measurements, and omitting it risks shoot-through or oscillation in bridge configurations.

Can STP16NM50N be used in place of STP16NF50?

No - STP16NF50 is a first-generation planar MOSFET with R_DS(on) = 0.32 Ω and no avalanche rating, while STP16NM50N uses MDmesh™ II technology delivering 0.21 Ω (typ), 470 mJ E_AS, and optimized high-frequency performance. Pinout is identical, but electrical behavior differs significantly under hard switching.

STP16NM50N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 260mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP16NM50N FAQ

1.How can I place an order for STP16NM50N through Aetrix?

Please submit a Request for Quotation (RFQ) for STP16NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP16NM50N reliable?

The price and inventory of STP16NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP16NM50N is usually 5 days.

3.What payment methods are accepted for STP16NM50N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP16NM50N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP16NM50N?

STP16NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP16NM50N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP16NM50N?

For technical support, including STP16NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP16NM50N requirements.

6.How does Aetrix verify that STP16NM50N is sourced from the original manufacturer or authorized distributors?

All STP16NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP16NM50N meets industry standards.

7.What is the process for return or replacement of STP16NM50N?

All STP16NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STP16NM50N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP16NM50N part is unused and in its original packaging.

Return procedure for STP16NM50N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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